Predicted protein targets (top 16)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 9/20 | 0.35 |
| ▸ | ADRB2 | P07550 | 1/20 | 0.34 |
| ▸ | ADRB1 | P08588 | 1/20 | 0.34 |
| ▸ | ADRB3 | P13945 | 1/20 | 0.34 |
| ▸ | MEN1 | O00255 | 3/20 | 0.33 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.33 |
| ▸ | LMNA | P02545 | 1/20 | 0.32 |
| ▸ | RAB9A | P51151 | 1/20 | 0.32 |
| ▸ | FKBP1A | P62942 | 1/20 | 0.32 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.32 |
| ▸ | TSHR | P16473 | 1/20 | 0.32 |
| ▸ | MDM2 | Q00987 | 1/20 | 0.32 |
| ▸ | POLB | P06746 | 1/20 | 0.32 |
| ▸ | MAPT | P10636 | 1/20 | 0.31 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.31 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4272563 | 0.99 | ALDH1A1 (0.35) | ALDH1A1ADRB2ADRB1ADRB3MEN1 | |
| SCHEMBL26843219 | 0.98 | ADRB2 (0.35) | ALDH1A1ADRB2ADRB1ADRB3MEN1 | |
| SCHEMBL13157302 | 0.90 | MEN1 (0.38) | ALDH1A1ADRB2ADRB1ADRB3MEN1 | |
| SCHEMBL16205181 | 0.89 | MEN1 (0.38) | ALDH1A1ADRB2ADRB1ADRB3MEN1 | |
| SCHEMBL15373731 | 0.89 | MEN1 (0.36) | ALDH1A1ADRB2ADRB1ADRB3MEN1 | |
| SCHEMBL24244855 | 0.87 | — | — | |
| SCHEMBL4272559 | 0.86 | ALDH1A1 (0.36) | ALDH1A1ADRB2ADRB1ADRB3MEN1 | |
| SCHEMBL17479985 | 0.86 | ADRB2 (0.38) | ALDH1A1ADRB2ADRB1ADRB3MEN1 | |
| SCHEMBL15293503 | 0.85 | ALDH1A1 (0.37) | ALDH1A1ADRB2ADRB1ADRB3MEN1 | |
| SCHEMBL15115533 | 0.85 | KMT2A (0.30) | MEN1KMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 137 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240210830-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-06-27 | — | — | US | disclosed |
| US-20240210830-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-06-27 | — | — | US | disclosed |
| US-20230400766-A1 | ONIUM SALT, RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230375928-A1 | Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-23 | — | — | US | disclosed |
| US-20230244142-A1 | POLYMER, RESIST COMPOSITION, AND PATTERN FORMING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-08-03 | — | — | US | disclosed |
| US-20230244142-A1 | POLYMER, RESIST COMPOSITION, AND PATTERN FORMING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-08-03 | — | — | US | disclosed |
| US-20230161254-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-25 | — | — | US | disclosed |
| US-20230161254-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-25 | — | — | US | disclosed |
| US-20230132653-A1 | MOLECULAR RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-04 | — | — | US | disclosed |
| US-20230132653-A1 | MOLECULAR RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-04 | — | — | US | disclosed |
| US-20130004740-A1 | ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND PATTERN FORMING METHOD EACH USING THE COMPOSITION, METHOD FOR PREPARING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2013-01-03 | — | — | US | disclosed |
| US-20130004741-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2013-01-03 | — | — | US | disclosed |
| US-20130004739-A1 | PATTERN FORMING METHOD, METHOD FOR PRODUCING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2013-01-03 | — | — | US | disclosed |
| US-20120164574-A1 | ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-06-28 | — | — | US | disclosed |
| US-20120052449-A1 | METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2012-03-01 | — | — | US | disclosed |
| US-20110318687-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-12-29 | — | — | US | disclosed |
| US-20110236828-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-09-29 | — | — | US | disclosed |
| US-20110236828-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-09-29 | — | — | US | disclosed |
| US-7569324-B2 | Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-08-04 | — | — | US | disclosed |
| US-20080124656-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-05-29 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20080124656-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, HCN4 | ALDH1A1 3081/4885ADRB2 3589/4885ADRB1 4275/4885 |
| US-20230375928-A1 | Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process | NAF1, RALA, RSU1 | ALDH1A1 1459/4885ADRB2 3039/4885ADRB1 3116/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.