Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TP53 | P04637 | 2/20 | 0.39 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.39 |
| ▸ | PEPD | P12955 | 1/20 | 0.34 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.33 |
| ▸ | GAA | P10253 | 1/20 | 0.33 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.33 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.33 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.32 |
| ▸ | LMNA | P02545 | 2/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL597324 | 0.86 | TAAR1 (0.36) | TP53ALDH1A1GAACYP2D6CYP2C19 | |
| SCHEMBL10239119 | 0.86 | TP53 (0.38) | TP53CYP3A4ALDH1A1GAACYP2D6 | |
| SCHEMBL18232626 | 0.84 | TP53 (0.35) | TP53CYP3A4PEPD | |
| SCHEMBL17012521 | 0.84 | TP53 (0.36) | TP53CYP3A4PEPDALDH1A1GAA | |
| SCHEMBL18785344 | 0.84 | TP53 (0.36) | TP53CYP3A4ALDH1A1GAACYP2D6 | |
| SCHEMBL10239120 | 0.84 | TP53 (0.36) | TP53CYP3A4ALDH1A1GAACYP2D6 | |
| SCHEMBL12016473 | 0.82 | ALDH1A1 (0.40) | TP53CYP3A4ALDH1A1CYP2C19 | |
| SCHEMBL18785340 | 0.82 | L3MBTL1 (0.37) | ALDH1A1GAASMN1; SMN2 | |
| SCHEMBL12039685 | 0.81 | TP53 (0.35) | TP53CYP3A4ALDH1A1GAACYP2D6 | |
| SCHEMBL18785917 | 0.81 | TP53 (0.68) | TP53CYP3A4ALDH1A1GAACYP2D6 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11662663-B2 | Substrate protective film-forming composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-30 | — | — | US | disclosed |
| US-11662663-B2 | Substrate protective film-forming composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-30 | — | — | US | disclosed |
| US-20200133123-A1 | SUBSTRATE PROTECTIVE FILM-FORMING COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-04-30 | — | — | US | disclosed |
| US-RE46765-E1 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-03-27 | — | — | US | disclosed |
| US-RE46736-E1 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-27 | — | — | US | disclosed |
| EP-2356516-B1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORP (JP) | 2017-10-25 | — | — | EP | disclosed |
| US-20170115566-A1 | RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-04-27 | — | — | US | disclosed |
| US-20160334706-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-11-17 | — | — | US | disclosed |
| EP-2105794-B1 | Novel photoacid generator, resist composition, and patterning process | SHINETSU CHEMICAL CO (JP) | 2015-08-19 | — | — | EP | disclosed |
| US-8951710-B2 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-02-10 | — | — | US | disclosed |
| US-8114570-B2 | Photoacid generator, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-02-14 | — | — | US | disclosed |
| US-20110318687-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-12-29 | — | — | US | disclosed |
| US-7985528-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-07-26 | — | — | US | disclosed |
| WO-2010067898-A2 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2010-06-17 | — | — | WO | disclosed |
| US-20100062374-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-11 | — | — | US | disclosed |
| US-20100062366-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-11 | — | — | US | disclosed |
| US-20100062373-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-11 | — | — | US | disclosed |
| US-20100062372-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-11 | — | — | US | disclosed |
| US-20090246694-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-10-01 | — | — | US | disclosed |
| US-20090246694-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-10-01 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20170115566-A1 | RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS | CASR, LIFR, LBR | TP53 3689/4885CYP3A4 4680/4885PEPD 4731/4885 |
| US-20090246694-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | ASIC1, HAO2, HRH3 | TP53 2864/4885CYP3A4 997/4885PEPD 3241/4885 |
| US-20100062373-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | RER1, ASH2L, PHF2 | TP53 4028/4885CYP3A4 4351/4885PEPD 3219/4885 |
| US-20100062374-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | RER1, ARCN1, ASH2L | TP53 4669/4885CYP3A4 4724/4885PEPD 3613/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.