Known targets — ChEMBL curated mechanism
ABL1ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB2AGTR1BCL2BCL2A1BCL2L1BCL2L10BCL2L2BCRBRAFCHRM1CHRNA10CHRNA9DRD1DRD2DRD3DRD4DRD5EGFRF2FLT1FLT4GCKGHSRGNRHRGRIN1GRIN2AGRIN2BGRIN2CGRIN2DGRIN3AGRIN3BHTR1AHTR1BHTR1DHTR2AHTR2CHTR3AIDH2KDRKITMAOBMCL1MTTPPP4HBPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PIKFYVEROCK1ROCK2SLC18A2SLC6A2SLC6A3SLC6A4TACR1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8gyrAgyrBparCparEpol
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 10)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MAP3K14 | Q99558 | 1/20 | 0.40 |
| ▸ | CRBN | Q96SW2 | 1/20 | 0.38 |
| ▸ | GAA | P10253 | 1/20 | 0.33 |
| ▸ | TSHR | P16473 | 1/20 | 0.33 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.32 |
| ▸ | MEN1 | O00255 | 1/20 | 0.31 |
| ▸ | APEX1 | P27695 | 1/20 | 0.31 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.31 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.31 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Sulfuric Acid SCHEMBL4970729 | 0.91 | MAP3K14 (0.43) | MAP3K14CRBNCYP19A1MEN1APEX1 | |
| SCHEMBL114368 | 0.88 | MAP3K14 (0.38) | MAP3K14CRBNCYP19A1MEN1KMT2A | |
| Ethane SCHEMBL28857929 | 0.87 | MAP3K14 (0.46) | MAP3K14CRBNGAATSHRCYP19A1 | |
| SCHEMBL11288 | 0.87 | — | — | |
| SCHEMBL15494454 | 0.87 | — | — | |
| SCHEMBL114518 | 0.86 | MAP3K14 (0.36) | MAP3K14CRBN | |
| Ammonia Solution, Strong SCHEMBL25176856 | 0.84 | — | — | |
| Hydrochloric Acid SCHEMBL3986242 | 0.84 | — | — | |
| Phosphine SCHEMBL22345181 | 0.84 | — | — | |
| SCHEMBL31244467 | 0.84 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-104969127-B | Compound, lower layer film for lithography forming material, lower layer film for lithography and pattern forming method | 三菱瓦斯化学株式会社 | 2019-11-26 | — | — | CN | disclosed |
| CN-106094440-B | Lower layer film for lithography forming material, lower layer film for lithography and pattern forming method | 三菱瓦斯化学株式会社 | 2019-11-22 | — | — | CN | disclosed |
| CN-106632921-B | Block copolymer and pattern treatment compositions and method | 罗门哈斯电子材料有限责任公司 | 2019-08-20 | — | — | CN | disclosed |
| CN-109991809-A | Photo-corrosion-resisting agent composition and method | 罗门哈斯电子材料有限责任公司 | 2019-07-09 | — | — | CN | disclosed |
| CN-109791362-A | The coating composition being used together with outer painting photoresist | 罗门哈斯电子材料韩国有限公司 | 2019-05-21 | — | — | CN | disclosed |
| CN-109725492-A | The lower layer's coating composition being used together with photoresist | 罗门哈斯电子材料韩国有限公司 | 2019-05-07 | — | — | CN | disclosed |
| CN-109541886-A | Antireflective composition with thermal acid generator | 罗门哈斯电子材料韩国有限公司 | 2019-03-29 | — | — | CN | disclosed |
| CN-106243514-B | Composition and method for pattern processing | 罗门哈斯电子材料有限责任公司 | 2019-02-15 | — | — | CN | disclosed |
| CN-109143783-A | The coating composition being used together with outer painting photoresist | 罗门哈斯电子材料韩国有限公司 | 2019-01-04 | — | — | CN | disclosed |
| CN-108878370-A | A kind of transparent conductive electrode and preparation method thereof, display device | 深圳市华星光电技术有限公司 | 2018-11-23 | — | — | CN | disclosed |
| CN-106632918-A | Block copolymer and associated photoresist composition and method of forming an electronic device | 罗门哈斯电子材料有限责任公司 | 2017-05-10 | — | — | CN | disclosed |
| CN-106632921-A | Block copolymers and pattern treatment compositions and methods | 罗门哈斯电子材料有限责任公司 | 2017-05-10 | — | — | CN | disclosed |
| CN-106647170-A | Coating compositions for use with an overcoated photoresist | 罗门哈斯电子材料韩国有限公司 | 2017-05-10 | — | — | CN | disclosed |
| CN-106556971-A | Photo-corrosion-resisting agent composition and method | 罗门哈斯电子材料韩国有限公司 | 2017-04-05 | — | — | CN | disclosed |
| CN-106479329-A | Coating compositions for use with overcoated photoresists | 罗门哈斯电子材料有限责任公司 | 2017-03-08 | — | — | CN | disclosed |
| CN-106462072-A | Lithographic film formation material, composition for lithographic film formation, lithographic film, pattern formation method, and purification method | 三菱瓦斯化学株式会社 | 2017-02-22 | — | — | CN | disclosed |
| EP-2273968-A1 | COMPOSITIONS AND METHODS INCORPORATING PHOTOCATALYSTS | THE PROCTER & GAMBLE COMPANY (US) | 2011-01-19 | — | — | EP | disclosed |
| WO-2009140076-A1 | COMPOSITIONS AND METHODS INCORPORATING PHOTOCATALYSTS | THE PROCTER & GAMBLE COMPANY (US) | 2009-11-19 | — | — | WO | disclosed |
| US-6541179-B2 | A chemically amplified, positive resist comprising a sulfonium salt compound as photoacid generator, a base resin containing a monomer having alicyclic structure, and a solvent; heat treatment and exposure | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-04-01 | — | — | US | disclosed |
| US-20010033990-A1 | Resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-10-25 | — | — | US | disclosed |