SCHEMBL114368

SCHEMBL114368

CCS(=O)(=O)O.O=C1CC(O)C(=O)N1

nearest known ligand 0.38

Known targets — ChEMBL curated mechanism

FGFR1FGFR2FGFR3FGFR4FLT1FLT4KDRPDGFRAPDGFRB

The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
MAP3K14 Q99558 1/20 0.38
CRBN Q96SW2 2/20 0.35
NPC1 O15118 1/20 0.34
DDB1 Q16531 1/20 0.33
BRD4 O60885 1/20 0.31
CREBBP Q92793 1/20 0.31
MEN1 O00255 1/20 0.31
ALDH1A1 P00352 1/20 0.31
KMT2A Q03164 1/20 0.31
CYP19A1 P11511 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17065485 0.90 MEN1 (0.35) MAP3K14CRBNNPC1DDB1MEN1
SCHEMBL1028532 0.88 MAP3K14 (0.40) MAP3K14CRBNMEN1KMT2ACYP19A1
Sulfuric Acid SCHEMBL4970729 0.88 MAP3K14 (0.43) MAP3K14CRBNMEN1KMT2ACYP19A1
SCHEMBL2573073 0.85 NPC1 (0.38) CRBNNPC1ALDH1A1
SCHEMBL112503 0.84 ALDH1A1 (0.38) NPC1ALDH1A1
Ethane SCHEMBL28857929 0.83 MAP3K14 (0.46) MAP3K14CRBNNPC1BRD4CREBBP
SCHEMBL15494454 0.83
SCHEMBL114518 0.83 MAP3K14 (0.36) MAP3K14CRBN
SCHEMBL17065493 0.82 MAP3K14 (0.33) MAP3K14
Ammonia Solution, Strong SCHEMBL25176856 0.81

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-108008600-A Radiation-ray sensitive composition 三菱瓦斯化学株式会社 2018-05-08 CN disclosed
CN-103733136-B Underlayer film forming material for lithography, underlayer film for lithography, and pattern forming method 三菱瓦斯化学株式会社 2017-06-23 CN disclosed
EP-2424947-A1 COMPOSITIONS AND METHODS INCORPORATING PHOTOCATALYSTS The Procter & Gamble Company (US) 2012-03-07 EP disclosed
EP-2384457-A2 COATING COMPOSITIONS AZ Electronic Materials USA Corp. (US) 2011-11-09 EP disclosed
EP-2273968-A1 COMPOSITIONS AND METHODS INCORPORATING PHOTOCATALYSTS THE PROCTER & GAMBLE COMPANY (US) 2011-01-19 EP disclosed
WO-2010126919-A1 COMPOSITIONS AND METHODS INCORPORATING PHOTOCATALYSTS THE PROCTER & GAMBLE COMPANY (US) 2010-11-04 WO disclosed
WO-2010055406-A2 COATING COMPOSITIONS AZ ELECTRONIC MATERIALS USA CORP. (US) 2010-05-20 WO disclosed
WO-2009140076-A1 COMPOSITIONS AND METHODS INCORPORATING PHOTOCATALYSTS THE PROCTER & GAMBLE COMPANY (US) 2009-11-19 WO disclosed