SCHEMBL10312494

SCHEMBL10312494

O=C(OCCCC1CC2CCCC(C1)C2)C(F)(F)S(=O)(=O)O

nearest known ligand 0.35

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 1/20 0.33
MAPT P10636 1/20 0.33
EPHX1 P07099 1/20 0.33
NAAA Q02083 1/20 0.31
FKBP1A P62942 2/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4407802 0.86 EPHX1 (0.43) SMN1; SMN2EPHX1NAAAFKBP1A
SCHEMBL4404941 0.85 EPHX1 (0.46) SMN1; SMN2EPHX1NAAAFKBP1A
SCHEMBL26459835 0.84 EPHX1 (0.32) SMN1; SMN2EPHX1NAAA
SCHEMBL13425201 0.83 ALDH1A1 (0.32)
SCHEMBL25918245 0.83 SCN9A (0.32) SMN1; SMN2MAPTEPHX1NAAAFKBP1A
SCHEMBL18557877 0.81
SCHEMBL2605882 0.81 EPHX1 (0.51) SMN1; SMN2EPHX1NAAAFKBP1A
SCHEMBL26460052 0.81 EPHX1 (0.34) SMN1; SMN2EPHX1NAAAFKBP1A
SCHEMBL18799229 0.80
SCHEMBL13425199 0.79 EPHX1 (0.34) SMN1; SMN2EPHX1NAAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240027905-A1 PHOTOACID GENERATORS, PHOTORESIST COMPOSITIONS, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-01-25 US disclosed
US-20230152691-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-05-18 US disclosed
US-20230123203-A1 METHOD FOR PRODUCING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, METHOD FOR PRODUCING ELECTRONIC DEVICE, AND METHOD FOR PRODUCING ONIUM SALT FUJIFILM CORPORATION (JP) 2023-04-20 US disclosed
US-20210371377-A1 CARBOXYLATE, QUENCHER, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2021-12-02 US disclosed
US-10766992-B2 Resin and resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2020-09-08 US disclosed
US-10719014-B2 Photoresists comprising amide component ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2020-07-21 US disclosed
US-9822060-B2 Compound, resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-11-21 US disclosed
US-9726976-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-08-08 US disclosed
US-9726974-B2 Resin, photoresist composition, and method for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-08-08 US disclosed
US-20120178021-A1 RESIN AND PHOTORESIST COMPOSITION COMPRISING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-07-12 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20210371377-A1 CARBOXYLATE, QUENCHER, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN CHRM1, CHRM2, FOXM1 SMN1; SMN2 1751/4885MAPT 4647/4885EPHX1 2178/4885
US-20230123203-A1 METHOD FOR PRODUCING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, METHOD FOR PRODUCING ELECTRONIC DEVICE, AND METHOD FOR PRODUCING ONIUM SALT PRKAR2B, GRK7, PRKAR2A SMN1; SMN2 4384/4885MAPT 2851/4885EPHX1 503/4885
US-10719014-B2 Photoresists comprising amide component ASPH, ALAD, SUN2 SMN1; SMN2 4785/4885MAPT 887/4885EPHX1 488/4885
US-20120178021-A1 RESIN AND PHOTORESIST COMPOSITION COMPRISING THE SAME SULT1A1, SULT1E1, C1S SMN1; SMN2 2735/4885MAPT 3262/4885EPHX1 1773/4885
US-20230152691-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN CHRM1, CHRM2, H1-0 SMN1; SMN2 4076/4885MAPT 4777/4885EPHX1 2516/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.