SCHEMBL10331753

SCHEMBL10331753

O=Cc1ccc(Oc2ccc3ccc(O)cc3c2)cc1

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ ALDH5A1 P51649 1/20 0.48
▸ ABAT P80404 1/20 0.48
▸ PARP10 Q53GL7 1/20 0.47
▸ PARP3 Q9Y6F1 1/20 0.47
▸ RAB9A P51151 1/20 0.45
▸ CYP1A2 P05177 1/20 0.42
▸ KMT2A Q03164 10/20 0.42
▸ MEN1 O00255 9/20 0.42
▸ MAPT P10636 1/20 0.42
▸ ESR1 P03372 6/20 0.42
▸ ESR2 Q92731 4/20 0.42
▸ CASP3 P42574 2/20 0.41
▸ SENP8 Q96LD8 2/20 0.41
▸ SENP7 Q9BQF6 2/20 0.41
▸ SENP6 Q9GZR1 2/20 0.41
▸ NPC1 O15118 1/20 0.41
▸ PKM P14618 1/20 0.41
▸ ALDH1A1 P00352 2/20 0.41
▸ PTGS1 P23219 1/20 0.41
▸ KDM4E B2RXH2 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10331762 0.93 PTGS1 (0.45) ALDH5A1ABATPARP10PARP3RAB9A
SCHEMBL8548906 0.89 PARP10 (0.52) PARP10PARP3RAB9AKMT2AMAPT
SCHEMBL10331767 0.86 ALDH5A1 (0.52) ALDH5A1ABATPARP10PARP3RAB9A
SCHEMBL20024723 0.84 MEN1 (0.52) RAB9ACYP1A2KMT2AMEN1MAPT
SCHEMBL20356051 0.84 CYP1A2 (0.58) CYP1A2KMT2AMEN1MAPTESR1
SCHEMBL12054413 0.84 CYP1A2 (0.58) CYP1A2KMT2AMEN1MAPTESR1
SCHEMBL12054411 0.84 CYP1A2 (0.58) CYP1A2KMT2AMEN1MAPTESR1
SCHEMBL3918710 0.82 RAB9A (0.58) PARP10PARP3RAB9ACYP1A2KMT2A
SCHEMBL15086611 0.82 TYR (0.56) CYP1A2KMT2AMEN1MAPTESR1
SCHEMBL7545244 0.82 ALDH5A1 (0.73) ALDH5A1ABATPARP10PARP3KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9230827-B2 Method for forming a resist under layer film and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-01-05 — — US disclosed
US-9230827-B2 Method for forming a resist under layer film and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-01-05 — — US disclosed
EP-2816409-A1 Method for forming a resist under layer film and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2014-12-24 — — EP disclosed
US-20140335692-A1 METHOD FOR FORMING A RESIST UNDER LAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-11-13 — — US disclosed
US-20140335692-A1 METHOD FOR FORMING A RESIST UNDER LAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-11-13 — — US disclosed
US-8853031-B2 Resist underlayer film composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-10-07 — — US disclosed
US-8853031-B2 Resist underlayer film composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-10-07 — — US disclosed
US-20120184103-A1 RESIST UNDERLAYER FILM COMPOSITION AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-07-19 — — US disclosed
US-20120184103-A1 RESIST UNDERLAYER FILM COMPOSITION AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-07-19 — — US disclosed
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