Predicted protein targets (top 8)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ATP1A1 | P05023 | 2/20 | 0.31 |
| ▸ | ATP1B1 | P05026 | 2/20 | 0.31 |
| ▸ | ATP1A3 | P13637 | 2/20 | 0.31 |
| ▸ | ATP1B2 | P14415 | 2/20 | 0.31 |
| ▸ | ATP1A2 | P50993 | 2/20 | 0.31 |
| ▸ | ATP1B3 | P54709 | 2/20 | 0.31 |
| ▸ | FXYD2 | P54710 | 2/20 | 0.31 |
| ▸ | ATP1A4 | Q13733 | 2/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10447597 | 0.85 | SLC6A2 (0.34) | — | |
| SCHEMBL10448227 | 0.81 | ATP1A1 (0.32) | ATP1A1ATP1B1ATP1A3ATP1B2ATP1A2 | |
| SCHEMBL14027147 | 0.73 | CYP19A1 (0.39) | ATP1A1ATP1B1ATP1A3ATP1B2ATP1A2 | |
| SCHEMBL10435676 | 0.72 | ATP1A1 (0.32) | ATP1A1ATP1B1ATP1A3ATP1B2ATP1A2 | |
| SCHEMBL12256024 | 0.71 | HMGCR (0.37) | — | |
| SCHEMBL25276417 | 0.70 | LMNA (0.31) | — | |
| SCHEMBL14586042 | 0.69 | — | — | |
| SCHEMBL90746 | 0.69 | PARP1 (0.32) | — | |
| SCHEMBL10052128 | 0.69 | SMN1; SMN2 (0.36) | — | |
| SCHEMBL16079858 | 0.69 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 145 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11687000-B2 | Sulfonium compound, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-27 | — | — | US | disclosed |
| US-11687000-B2 | Sulfonium compound, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-27 | — | — | US | disclosed |
| US-11215926-B2 | Sulfonium compound, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-01-04 | — | — | US | disclosed |
| US-11022881-B2 | Photoacid generator, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-06-01 | — | — | US | disclosed |
| US-20200319550-A1 | SULFONIUM COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-10-08 | — | — | US | disclosed |
| EP-3088955-B1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2020-06-03 | — | — | EP | disclosed |
| US-20200159115-A1 | NOVEL SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-05-21 | — | — | US | disclosed |
| US-10457761-B2 | Polymer, resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-10-29 | — | — | US | disclosed |
| US-20190324367-A1 | PHOTOACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-10-24 | — | — | US | disclosed |
| US-10248022-B2 | Sulfonium compound, making method, resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-04-02 | — | — | US | disclosed |
| US-20130065183-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-03-14 | — | — | US | disclosed |
| US-20130052587-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-02-28 | — | — | US | disclosed |
| US-20130052587-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-02-28 | — | — | US | disclosed |
| US-20130017492-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-17 | — | — | US | disclosed |
| US-20130017492-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-17 | — | — | US | disclosed |
| US-20120308930-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-12-06 | — | — | US | disclosed |
| US-20120308930-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-12-06 | — | — | US | disclosed |
| US-20120202158-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-08-09 | — | — | US | disclosed |
| US-20120202158-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-08-09 | — | — | US | disclosed |
| US-20120183903-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-07-19 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11215926-B2 | Sulfonium compound, resist composition, and patterning process | HNRNPU, PAG1, LSM14A | ATP1A1 4500/4885ATP1B1 4164/4885ATP1A3 3615/4885 |
| US-11687000-B2 | Sulfonium compound, chemically amplified resist composition, and patterning process | ETV6, PKD1, PKD2 | ATP1A1 3009/4885ATP1B1 2351/4885ATP1A3 2404/4885 |
| US-20200319550-A1 | SULFONIUM COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | ETV6, PKD1, PKD2 | ATP1A1 3009/4885ATP1B1 2351/4885ATP1A3 2404/4885 |
| US-20200159115-A1 | NOVEL SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS | ETV6, EEF2, EEF1G | ATP1A1 2498/4885ATP1B1 2328/4885ATP1A3 1394/4885 |
| US-10248022-B2 | Sulfonium compound, making method, resist composition, and pattern forming process | HNRNPU, C1R, LBR | ATP1A1 3191/4885ATP1B1 1793/4885ATP1A3 1773/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.