Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP19A1 | P11511 | 1/20 | 0.33 |
| ▸ | SHBG | P04278 | 1/20 | 0.32 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL105713 | 1.00 | CYP19A1 (0.33) | CYP19A1SHBGEPHX1 | |
| SCHEMBL107614 | 0.97 | CYP19A1 (0.30) | CYP19A1 | |
| SCHEMBL103759 | 0.92 | — | — | |
| SCHEMBL27959542 | 0.89 | CYP19A1 (0.30) | CYP19A1 | |
| SCHEMBL8618201 | 0.89 | CYP19A1 (0.30) | CYP19A1 | |
| SCHEMBL106561 | 0.87 | — | — | |
| SCHEMBL8617813 | 0.86 | — | — | |
| SCHEMBL28520399 | 0.81 | — | — | |
| SCHEMBL8593812 | 0.81 | SHBG (0.31) | SHBG | |
| SCHEMBL7932454 | 0.80 | SHBG (0.32) | SHBGEPHX1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 238 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2628744-B1 | Silicon-containing surface modifier, resist underlayer film composition containing this, and patterning process | SHINETSU CHEMICAL CO (JP) | 2016-11-30 | — | — | EP | claimed |
| EP-2628745-B1 | Silicon-containing surface modifier, resist lower layer film-forming composition containing the same, and patterning process | SHINETSU CHEMICAL CO (JP) | 2015-03-25 | — | — | EP | claimed |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-04-30 | — | — | US | disclosed |
| EP-4700067-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPERSTRATE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-25 | — | — | EP | disclosed |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-12 | — | — | US | disclosed |
| EP-4692941-A2 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-02-11 | — | — | EP | disclosed |
| US-20260029706-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPER STRAIGHT | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-29 | — | — | US | disclosed |
| EP-4660703-A2 | METAL-CONTAINING FILM PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2025-12-10 | — | — | EP | disclosed |
| US-20250372377-A1 | METAL-CONTAINING FILM PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-04 | — | — | US | disclosed |
| EP-4621486-A2 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-24 | — | — | EP | disclosed |
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-18 | — | — | US | disclosed |
| US-20040265737-A1 | Radiation sensitive refractive index changing composition, pattern forming method and optical material | JSR CORPORATION (JP) | 2004-12-30 | — | — | US | disclosed |
| US-6828078-B2 | Photoresist for use in optoelectronic and display fields; porosity; optical fibers | JSR CORPORATION (JP) | 2004-12-07 | — | — | US | disclosed |
| US-6787289-B2 | OPTICS | JSR CORPORATION (JP) | 2004-09-07 | — | — | US | disclosed |
| US-20040013972-A1 | Radiation-sensitive composition changing in refractive index and method of changing refractive index | JSR CORPORATION (JP) | 2004-01-22 | — | — | US | disclosed |
| EP-1350814-A1 | RADIATION-SENSITIVE COMPOSITION CHANGING IN REFRACTIVE INDEX AND METHOD OF CHANGING REFRACTIVE INDEX | JSR Corporation (JP) | 2003-10-08 | — | — | EP | disclosed |
| US-20030139486-A1 | Radiation sensitive refractive index changing composition and refractive index changing method | JSR CORPORATION (JP) | 2003-07-24 | — | — | US | disclosed |
| EP-1323742-A2 | Radiation sensitive refractive index changing composition and refractive index changing method | JSR Corporation (JP) | 2003-07-02 | — | — | EP | disclosed |
| US-20030064303-A1 | Composition having refractive index sensitively changeable by radiation and method for forming refractive index pattern | JSR CORPORATION (JP) | 2003-04-03 | — | — | US | disclosed |
| EP-1235104-A1 | COMPOSITION HAVING REFRACTIVE INDEX SENSITIVELY CHANGEABLE BY RADIATION AND METHOD FOR FORMING REFRACTIVE INDEX PATTERN | JSR Corporation (JP) | 2002-08-28 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | ASH2L, PUF60, IDUA | CYP19A1 4426/4885SHBG 4528/4885EPHX1 4632/4885 |
| US-20260029706-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPER STRAIGHT | SMC2, F12, SMC1A | CYP19A1 893/4885SHBG 584/4885EPHX1 230/4885 |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | EFNA1, EPHA4, ETV6 | CYP19A1 3996/4885SHBG 2868/4885EPHX1 1683/4885 |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SMC1A, SPOUT1, LBR | CYP19A1 2153/4885SHBG 3261/4885EPHX1 3013/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.