Predicted protein targets (top 4)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | RAB9A | P51151 | 2/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.33 |
| ▸ | PSMB5 | P28074 | 1/20 | 0.32 |
| ▸ | NPC1 | O15118 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1703713 | 0.93 | PDGFRB (0.30) | — | |
| SCHEMBL4999758 | 0.83 | PTGS2 (0.31) | RAB9APSMB5NPC1 | |
| SCHEMBL5005179 | 0.82 | RAB9A (0.33) | RAB9AALDH1A1PSMB5NPC1 | |
| SCHEMBL5005558 | 0.82 | RAB9A (0.33) | RAB9AALDH1A1PSMB5NPC1 | |
| SCHEMBL105868 | 0.82 | PSMB5 (0.35) | RAB9AALDH1A1PSMB5NPC1 | |
| SCHEMBL3894507 | 0.80 | RAB9A (0.32) | RAB9AALDH1A1PSMB5NPC1 | |
| SCHEMBL2904517 | 0.80 | PSMB5 (0.34) | RAB9AALDH1A1PSMB5NPC1 | |
| SCHEMBL17633828 | 0.80 | PSMB5 (0.34) | RAB9AALDH1A1PSMB5NPC1 | |
| SCHEMBL2904512 | 0.80 | PSMB5 (0.34) | RAB9AALDH1A1PSMB5NPC1 | |
| SCHEMBL27341120 | 0.79 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 206 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2628744-B1 | Silicon-containing surface modifier, resist underlayer film composition containing this, and patterning process | SHINETSU CHEMICAL CO (JP) | 2016-11-30 | — | — | EP | claimed |
| EP-2628745-B1 | Silicon-containing surface modifier, resist lower layer film-forming composition containing the same, and patterning process | SHINETSU CHEMICAL CO (JP) | 2015-03-25 | — | — | EP | claimed |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-04-30 | — | — | US | disclosed |
| EP-4700067-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPERSTRATE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-25 | — | — | EP | disclosed |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-12 | — | — | US | disclosed |
| EP-4692941-A2 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-02-11 | — | — | EP | disclosed |
| US-20260029706-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPER STRAIGHT | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-29 | — | — | US | disclosed |
| EP-4660703-A2 | METAL-CONTAINING FILM PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2025-12-10 | — | — | EP | disclosed |
| US-20250372377-A1 | METAL-CONTAINING FILM PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-04 | — | — | US | disclosed |
| EP-4621486-A2 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-24 | — | — | EP | disclosed |
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-18 | — | — | US | disclosed |
| US-7160625-B2 | Insulating film material containing an organic silane compound, its production method and semiconductor device | TOSOH CORPORATION (JP) | 2007-01-09 | — | — | US | disclosed |
| US-20060127683-A1 | Insulating film material containing an organic silane compound, its production method and semiconductor device | TOSOH CORPORATION | 2006-06-15 | — | — | US | disclosed |
| US-20060024980-A1 | Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device | JSR CORPORATION (JP) | 2006-02-02 | — | — | US | disclosed |
| EP-1619226-A1 | Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device | JSR Corporation (JP) | 2006-01-25 | — | — | EP | disclosed |
| US-20030180550-A1 | Insulating film material containing an organic silane compound, its production method and semiconductor device | TOSOH CORPORATION | 2003-09-25 | — | — | US | disclosed |
| US-5594079-A | COORDINATION CATALYST CONTAINING BORON, STEREOREGULAR POLYPROPYLENE | TOSOH CORPORATION (JP) | 1997-01-14 | — | — | US | disclosed |
| US-5489634-A | EFFICIENT SELECTIVE CATALYTIC POLYMERIZATION OF ALPHA-OLEFINS YIELDS HIGH MOLECULAR WEIGHT SPHERICAL PARTICLES HAVING HIGH BULK DENSITY, CONTROLLED PARTICLE SIZE AND MOLECULAR WEIGHT DISTRIBUTION | TOSOH CORPORATION (JP) | 1996-02-06 | — | — | US | disclosed |
| EP-0582278-A2 | Method for producing a polyolefin | TOSOH CORPORATION (JP) | 1994-02-09 | — | — | EP | disclosed |
| EP-0530814-A1 | Method for producing a stereospecific polyolefin | TOSOH CORPORATION (JP) | 1993-03-10 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | ASH2L, PUF60, IDUA | RAB9A 2174/4885ALDH1A1 4472/4885PSMB5 1914/4885 |
| US-20260029706-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPER STRAIGHT | SMC2, F12, SMC1A | RAB9A 2675/4885ALDH1A1 1644/4885PSMB5 2198/4885 |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | EFNA1, EPHA4, ETV6 | RAB9A 158/4885ALDH1A1 4452/4885PSMB5 1664/4885 |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SMC1A, SPOUT1, LBR | RAB9A 2659/4885ALDH1A1 1558/4885PSMB5 1113/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.