Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GLA | P06280 | 1/20 | 0.36 |
| ▸ | GRIN2D | O15399 | 3/20 | 0.35 |
| ▸ | GRIN3B | O60391 | 3/20 | 0.35 |
| ▸ | GRIN1 | Q05586 | 3/20 | 0.35 |
| ▸ | GRIN2A | Q12879 | 3/20 | 0.35 |
| ▸ | GRIN2B | Q13224 | 3/20 | 0.35 |
| ▸ | GRIN2C | Q14957 | 3/20 | 0.35 |
| ▸ | GRIN3A | Q8TCU5 | 3/20 | 0.35 |
| ▸ | LMNA | P02545 | 3/20 | 0.34 |
| ▸ | TSHR | P16473 | 3/20 | 0.34 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.34 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.34 |
| ▸ | SLC22A2 | O15244 | 2/20 | 0.33 |
| ▸ | SLC47A1 | Q96FL8 | 2/20 | 0.33 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.33 |
| ▸ | SLC22A1 | O15245 | 1/20 | 0.33 |
| ▸ | NFKB1 | P19838 | 1/20 | 0.33 |
| ▸ | STAT6 | P42226 | 1/20 | 0.33 |
| ▸ | SIGMAR1 | Q99720 | 1/20 | 0.33 |
| ▸ | POLB | P06746 | 2/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL106253 | 0.79 | GRIN2D (0.35) | GLAGRIN2DGRIN3BGRIN1GRIN2A | |
| SCHEMBL4996060 | 0.77 | GRIN2D (0.33) | GLAGRIN2DGRIN3BGRIN1GRIN2A | |
| SCHEMBL5005497 | 0.77 | GRIN2D (0.33) | GLAGRIN2DGRIN3BGRIN1GRIN2A | |
| SCHEMBL969884 | 0.75 | — | — | |
| SCHEMBL107231 | 0.73 | SLC22A2 (0.38) | GRIN2DGRIN3BGRIN1GRIN2AGRIN2B | |
| SCHEMBL103781 | 0.73 | MEN1 (0.36) | GRIN2DGRIN3BGRIN1GRIN2AGRIN2B | |
| SCHEMBL4939945 | 0.72 | ALDH1A1 (0.31) | GRIN2DGRIN3BGRIN1GRIN2AGRIN2B | |
| SCHEMBL4999949 | 0.72 | MEN1 (0.32) | GRIN2DGRIN3BGRIN1GRIN2AGRIN2B | |
| SCHEMBL4999754 | 0.72 | ALDH1A1 (0.33) | GRIN2DGRIN3BGRIN1GRIN2AGRIN2B | |
| SCHEMBL106987 | 0.70 | EPHX2 (0.35) | LMNAALDH1A1L3MBTL1MAPT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 211 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2628744-B1 | Silicon-containing surface modifier, resist underlayer film composition containing this, and patterning process | SHINETSU CHEMICAL CO (JP) | 2016-11-30 | — | — | EP | claimed |
| EP-2628745-B1 | Silicon-containing surface modifier, resist lower layer film-forming composition containing the same, and patterning process | SHINETSU CHEMICAL CO (JP) | 2015-03-25 | — | — | EP | claimed |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-04-30 | — | — | US | disclosed |
| EP-4700067-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPERSTRATE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-25 | — | — | EP | disclosed |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-12 | — | — | US | disclosed |
| EP-4692941-A2 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-02-11 | — | — | EP | disclosed |
| US-20260029706-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPER STRAIGHT | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-29 | — | — | US | disclosed |
| EP-4660703-A2 | METAL-CONTAINING FILM PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2025-12-10 | — | — | EP | disclosed |
| US-20250372377-A1 | METAL-CONTAINING FILM PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-04 | — | — | US | disclosed |
| EP-4621486-A2 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-24 | — | — | EP | disclosed |
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-18 | — | — | US | disclosed |
| US-7138158-B2 | Forming a dielectric layer using a hydrocarbon-containing precursor | INTEL CORPORATION (US) | 2006-11-21 | — | — | US | disclosed |
| CN-1803805-A | Insulating film material containing an organic silane compound, its production method and semiconductor device | TOSOH CORP (JP) | 2006-07-19 | — | — | CN | disclosed |
| CN-1793151-A | Insulating film material containing an organic silane compound, its production method and semiconductor device | TOSOH CORP (JP) | 2006-06-28 | — | — | CN | disclosed |
| US-20060127683-A1 | Insulating film material containing an organic silane compound, its production method and semiconductor device | TOSOH CORPORATION | 2006-06-15 | — | — | US | disclosed |
| US-20040185679-A1 | Forming a dielectric layer using porogens | INTEL CORPORATION | 2004-09-23 | — | — | US | disclosed |
| US-20040170760-A1 | Forming a dielectric layer using a hydrocarbon-containing precursor | INTEL CORPORATION | 2004-09-02 | — | — | US | disclosed |
| US-20030180550-A1 | Insulating film material containing an organic silane compound, its production method and semiconductor device | TOSOH CORPORATION | 2003-09-25 | — | — | US | disclosed |
| CN-1437228-A | Material for insulating film containing organic silane compound, method for producing the same, and semiconductor device | TOKURI CO LTD (JP) | 2003-08-20 | — | — | CN | disclosed |
| JP-2000302791-A | SILICON COMPOUND, INSULATING FILM FORMING MATERIAL AND SEMICONDUCTOR APPARATUS | FUJITSU LTD | 2000-10-31 | — | — | JP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | ASH2L, PUF60, IDUA | GLA 3377/4885GRIN2D 1078/4885GRIN3B 1800/4885 |
| US-20260029706-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPER STRAIGHT | SMC2, F12, SMC1A | GLA 4609/4885GRIN2D 1193/4885GRIN3B 3198/4885 |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | EFNA1, EPHA4, ETV6 | GLA 3564/4885GRIN2D 1017/4885GRIN3B 1743/4885 |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SMC1A, SPOUT1, LBR | GLA 3817/4885GRIN2D 417/4885GRIN3B 1288/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.