SCHEMBL4999949

SCHEMBL4999949

CC[Si](OC)(OC)C12CC3CC(CC(C3)C1)C2

nearest known ligand 0.33

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 1/20 0.32
KMT2A Q03164 1/20 0.32
ALDH1A1 P00352 2/20 0.31
LMNA P02545 1/20 0.31
TSHR P16473 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.31
GRIN2D O15399 3/20 0.30
GRIN3B O60391 3/20 0.30
GRIN1 Q05586 3/20 0.30
GRIN2A Q12879 3/20 0.30
GRIN2B Q13224 3/20 0.30
GRIN2C Q14957 3/20 0.30
GRIN3A Q8TCU5 3/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5002934 0.81 MEN1 (0.34) MEN1KMT2ALMNA
SCHEMBL4999754 0.78 ALDH1A1 (0.33) MEN1KMT2AALDH1A1LMNATSHR
SCHEMBL105279 0.72 GLA (0.36) ALDH1A1LMNATSHRL3MBTL1GRIN2D
SCHEMBL106253 0.72 GRIN2D (0.35) ALDH1A1LMNATSHRL3MBTL1GRIN2D
SCHEMBL5002841 0.71 MEN1 (0.36) MEN1KMT2AALDH1A1LMNAGRIN2D
SCHEMBL5005497 0.70 GRIN2D (0.33) ALDH1A1LMNATSHRL3MBTL1GRIN2D
SCHEMBL4996060 0.70 GRIN2D (0.33) ALDH1A1LMNATSHRL3MBTL1GRIN2D
SCHEMBL4999619 0.68 HSD11B1 (0.35) KMT2AALDH1A1TSHRGRIN2DGRIN3B
SCHEMBL4995251 0.68 LMNA (0.34) KMT2AALDH1A1LMNAGRIN2DGRIN3B
SCHEMBL4996434 0.68 MEN1 (0.34) MEN1KMT2ALMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-100415752-C Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORP (JP) 2008-09-03 CN disclosed
US-7413775-B2 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION (JP) 2008-08-19 US disclosed
CN-100367472-C Material for insulating film containing organic silane compound, method for producing the same, and semiconductor device TOKURI CO LTD (JP) 2008-02-06 CN disclosed
CN-100335488-C Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORP (JP) 2007-09-05 CN disclosed
US-7160625-B2 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION (JP) 2007-01-09 US disclosed
CN-1803805-A Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORP (JP) 2006-07-19 CN disclosed
CN-1793151-A Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORP (JP) 2006-06-28 CN disclosed
US-20060127683-A1 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION 2006-06-15 US disclosed
US-20030180550-A1 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION 2003-09-25 US disclosed
CN-1437228-A Material for insulating film containing organic silane compound, method for producing the same, and semiconductor device TOKURI CO LTD (JP) 2003-08-20 CN disclosed