SCHEMBL1056789

SCHEMBL1056789

CCCCCCNC(=O)OCc1c([N+](=O)[O-])cccc1[N+](=O)[O-]

nearest known ligand 0.54

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
MGLL Q99685 2/20 0.54
KMT2A Q03164 2/20 0.49
MEN1 O00255 1/20 0.48
LMNA P02545 1/20 0.48
TP53 P04637 1/20 0.48
HSP90AA1 P07900 1/20 0.48
HPGD P15428 1/20 0.48
ATM Q13315 1/20 0.48
PTGS2 P35354 1/20 0.47
FAAH O00519 1/20 0.47
EPHX1 P07099 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16225601 0.95 KMT2A (0.54) MGLLKMT2AMEN1LMNATP53
SCHEMBL15969811 0.94 TGM2 (0.45) MGLLKMT2AMEN1LMNATP53
SCHEMBL1057422 0.90 KMT2A (0.44) MGLLKMT2AMEN1LMNATP53
SCHEMBL16924653 0.87 ALDH1A1 (0.42) KMT2AMEN1LMNA
SCHEMBL6448999 0.86 MGLL (0.53) MGLLKMT2AMEN1LMNATP53
SCHEMBL10401227 0.86 MGLL (0.53) MGLLKMT2AMEN1LMNATP53
SCHEMBL1053903 0.86 MGLL (0.53) MGLLKMT2AMEN1LMNATP53
SCHEMBL3612593 0.86 MGLL (0.53) MGLLKMT2AMEN1LMNATP53
SCHEMBL6868708 0.84 ALDH1A1 (0.47) KMT2AMEN1LMNATP53
SCHEMBL14962143 0.81 ALDH1A1 (0.42) KMT2AMEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2025034474-A1 3D PRINTED POROUS SUPRAMOLECULAR SORBENTS BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM (US) 2025-02-13 WO disclosed
US-20240199854-A1 COMPOSITION, CURED FILM, STRUCTURAL BODY, OPTICAL FILTER, SOLID-STATE IMAGING ELEMENT, IMAGE DISPLAY DEVICE, AND MANUFACTURING METHOD OF CURED FILM FUJIFLIM CORPORATION (JP) 2024-06-20 US disclosed
US-20240030030-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION JSR CORPORATION (JP) 2024-01-25 US disclosed
US-20240021429-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION JSR CORPORATION (JP) 2024-01-18 US disclosed
WO-2022209816-A1 METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM JSR株式会社 2022-10-06 WO disclosed
WO-2022202402-A1 SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM JSR株式会社 2022-09-29 WO disclosed
CN-107077070-B Photosensitive resin composition, cured film, element provided with cured film, and method for manufacturing semiconductor device 东丽株式会社 2020-06-16 CN disclosed
EP-3203320-B9 PHOTOSENSITIVE RESIN COMPOSITION, CURED FILM, ELEMENT PROVIDED WITH CURED FILM, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE TORAY INDUSTRIES (JP) 2020-05-06 EP disclosed
EP-3203320-B1 PHOTOSENSITIVE RESIN COMPOSITION, CURED FILM, ELEMENT PROVIDED WITH CURED FILM, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE TORAY INDUSTRIES (JP) 2019-10-23 EP disclosed
US-10409163-B2 Photosensitive resin composition, cured film, element provided with cured film, and method for manufacturing semiconductor device TORAY INDUSTRIES, INC. (JP) 2019-09-10 US disclosed
US-20140335448-A1 PHOTOSENSITIVE SILOXANE RESIN COMPOSITION AZ ELECTRONIC MATERIALS USA CORP. (US) 2014-11-13 US disclosed
EP-2799928-A1 PHOTOSENSITIVE RESIN COMPOSITION AND PROCESS FOR PRODUCING SEMICONDUCTOR ELEMENT Toray Industries, Inc. (JP) 2014-11-05 EP disclosed
US-20140242787-A1 PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE TORAY INDUSTRIES, INC. (JP) 2014-08-28 US disclosed
US-8486604-B2 Positive-type radiation-sensitive composition, cured film, interlayer insulating film, method of forming interlayer insulating film, display device, and siloxane polymer for forming interlayer insulating film JSR CORPORATION (JP) 2013-07-16 US disclosed
US-20110008730-A1 POSITIVE-TYPE RADIATION-SENSITIVE COMPOSITION, CURED FILM, INTERLAYER INSULATING FILM, METHOD OF FORMING INTERLAYER INSULATING FILM, DISPLAY DEVICE, AND SILOXANE POLYMER FOR FORMING INTERLAYER INSULATING FILM JSR CORPORATION (JP) 2011-01-13 US disclosed
US-7374856-B2 Positive type photo-sensitive siloxane composition, cured film formed from the composition and device incorporating the cured film TORAY INDUSTRIES, INC. (JP) 2008-05-20 US disclosed
US-20060115766-A1 Positive type photo-sensitive siloxane composition, cured film formed from the composition and device incorporating the cured film TORAY INDUSTRIES, INC. (JP) 2006-06-01 US disclosed
EP-1662322-A2 Positive type photo-sensitive siloxane composition, curing film formed by the composition and device with the curing film TORAY INDUSTRIES, INC. (JP) 2006-05-31 EP disclosed
US-6815142-B1 Method for forming resist pattern, and overlying layer material and semiconductor device used for forming resist pattern RENESAS TECHNOLOGY CORP. (JP) 2004-11-09 US disclosed
US-6180320-B1 Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 2001-01-30 US disclosed