Known targets — ChEMBL curated mechanism
ADRA2AADRA2BADRA2CADRB2AGTR1AVPR1AAVPR1BAVPR2BDKRB2CALCRCHRNA3CHRNB4ESR1ESR2GHSRGNRHRGSC1HSPA8MALT1MC1RMC4RNOS1NOS2NOS3OPRK1OXTRRAMP1RAMP2RAMP3SCN5ASSTR1SSTR2SSTR3SSTR4SSTR5dacAdacBdacCfolPftsImrcAmrcBmrdArplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of Acetic Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA2 | P00918 | 1/20 | 0.44 |
| ▸ | CA4 | P22748 | 1/20 | 0.44 |
| ▸ | CES2 | O00748 | 4/20 | 0.42 |
| ▸ | CES1 | P23141 | 4/20 | 0.42 |
| ▸ | CA1 | P00915 | 2/20 | 0.42 |
| ▸ | NAPRT | Q6XQN6 | 2/20 | 0.41 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.41 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.41 |
| ▸ | GAA | P10253 | 1/20 | 0.41 |
| ▸ | MAPT | P10636 | 1/20 | 0.39 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.38 |
| ▸ | TSHR | P16473 | 2/20 | 0.38 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.38 |
| ▸ | ALOX5 | P09917 | 1/20 | 0.38 |
| ▸ | AKR1C3 | P42330 | 1/20 | 0.38 |
| ▸ | GLA | P06280 | 1/20 | 0.38 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.38 |
| ▸ | DAO | P14920 | 1/20 | 0.38 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.38 |
| ▸ | ALPL | P05186 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Bicarbonate SCHEMBL105290 | 0.92 | CA2 (0.46) | CA2CA4CES2CES1CA1 | |
| Bicarbonate SCHEMBL105292 | 0.92 | CA2 (0.46) | CA2CA4CES2CES1CA1 | |
| Oxalic Acid SCHEMBL105013 | 0.90 | CA4 (0.44) | CA2CA4CES2CES1CA1 | |
| Acetic Acid SCHEMBL7788632 | 0.89 | CES2 (0.46) | CA2CA4CES2CES1CA1 | |
| Acetic Acid SCHEMBL547513 | 0.89 | FNTA (0.44) | CA2CA4CES2CA1GAA | |
| Oxalic Acid SCHEMBL107011 | 0.87 | CA2 (0.42) | CA2CA4CES2CES1NAPRT | |
| Acetic Acid SCHEMBL8465174 | 0.87 | CES2 (0.45) | CA2CA4CES2CES1CA1 | |
| Propionic Acid SCHEMBL104393 | 0.86 | CES2 (0.47) | CA2CA4CES2CES1SMN1; SMN2 | |
| SCHEMBL107678 | 0.84 | CA2 (0.37) | CA2CA4CES2CES1NAPRT | |
| Methylmalonic Acid SCHEMBL107949 | 0.84 | ALPL (0.39) | CA2CA4CES2CES1NAPRT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 898 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-116779434-A | Etching process for electronic functional element with hole for 5G chip | 深圳市盛鸿运科技有限公司 | 2023-09-19 | — | — | CN | claimed |
| EP-1099983-B1 | Chemically amplified positive resist composition and patterning method | SHINETSU CHEMICAL CO (JP) | 2014-08-06 | — | — | EP | claimed |
| US-20070117041-A1 | Photosensitive coating for enhancing a contrast of a photolithographic exposure | INFINEON TECHNOLOGIES AG (DE) | 2007-05-24 | — | — | US | claimed |
| US-20070105043-A1 | Photosensitive coating for enhancing a contrast of a photolithographic exposure | QIMONDA AG (DE) | 2007-05-10 | — | — | US | claimed |
| US-20070092829-A1 | Photosensitive coating for enhancing a contrast of a photolithographic exposure | INFINEON TECHNOLOGIES AG (DE) | 2007-04-26 | — | — | US | claimed |
| WO-2007045498-A2 | PHOTOSENSITIVE COATING FOR ENHANCING A CONTRAST OF A PHOTOLITHOGRAPHIC EXPOSURE | QIMONDA AG (DE) | 2007-04-26 | — | — | WO | claimed |
| CN-1275095-C | Novel process for preparing resists | CLARIANT INT LTD (JP) | 2006-09-13 | — | — | CN | claimed |
| EP-1540421-A1 | HIGHLY SENSITIVE, HIGH-RESOLUTION PHOTORESIST FOR ELECTRON BEAM LITHOGRAPHY | Infineon Technologies AG (DE) | 2005-06-15 | — | — | EP | claimed |
| WO-2004029718-A1 | HIGHLY SENSITIVE AND HIGH-RESOLUTION PHOTORESIST FOR ION PROJECTION LITHOGRAPHY | INFINEON TECHNOLOGIES AG (DE) | 2004-04-08 | — | — | WO | claimed |
| WO-2004029717-A1 | HIGHLY SENSITIVE, HIGH-RESOLUTION PHOTORESIST FOR ELECTRON BEAM LITHOGRAPHY | INFINEON TECHNOLOGIES AG (DE) | 2004-04-08 | — | — | WO | claimed |
| EP-0942329-B1 | NOVEL PROCESS FOR PREPARING RESISTS | CLARIANT FINANCE BVI LTD (VG) | 2002-11-13 | — | — | EP | claimed |
| US-20010024765-A1 | Novel process for preparing resists | MERCK PATENT GMBH (DE) | 2001-09-27 | — | — | US | claimed |
| US-6284427-B1 | Process for preparing resists | CLARIANT FINANCE (BVI) LIMITED (VG) | 2001-09-04 | — | — | US | claimed |
| CN-1239556-A | Novel process for preparing resists | CLARIANT INT LTD (CH) | 1999-12-22 | — | — | CN | claimed |
| EP-0942329-A1 | NOVEL PROCESS FOR PREPARING RESISTS | Clariant International Ltd. (CH) | 1999-09-15 | — | — | EP | claimed |
| EP-4749365-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-05-27 | — | — | EP | disclosed |
| CN-122072437-A | Chemically amplified negative resist composition and resist pattern forming method | 信越化学工业株式会社 | 2026-05-22 | — | — | CN | disclosed |
| US-4297401-A | COMPRISING A MIXTURE OF EPOXY-CONTAINING COMPOUND, AN ONIUM CATALYST, AND A SILANE ANCHORING AGENT; HERMETIC SEALING; SHELF LIFE | MINNESOTA MINING & MANUFACTURING COMPANY (US) | 1981-10-27 | — | — | US | disclosed |
| US-4156046-A | POLYEPOXIDES, EPOXY-TERMINATED SILANES | MINNESOTA MINING AND MANUFACTURING COMPANY (US) | 1979-05-22 | — | — | US | disclosed |
| US-4101513-A | ONIUM CATALYSTS OF GROUP 5A, 6A OR 7A ATOMS | MINNESOTA MINING AND MANUFACTURING COMPANY (US) | 1978-07-18 | — | — | US | disclosed |