Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CES2 | O00748 | 5/20 | 0.47 |
| ▸ | CES1 | P23141 | 5/20 | 0.47 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.39 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.39 |
| ▸ | MAPT | P10636 | 2/20 | 0.39 |
| ▸ | LMNA | P02545 | 1/20 | 0.38 |
| ▸ | HDAC3 | O15379 | 1/20 | 0.38 |
| ▸ | HDAC4 | P56524 | 1/20 | 0.38 |
| ▸ | HDAC1 | Q13547 | 1/20 | 0.38 |
| ▸ | HDAC7 | Q8WUI4 | 1/20 | 0.38 |
| ▸ | HDAC2 | Q92769 | 1/20 | 0.38 |
| ▸ | HDAC10 | Q969S8 | 1/20 | 0.38 |
| ▸ | HDAC11 | Q96DB2 | 1/20 | 0.38 |
| ▸ | HDAC8 | Q9BY41 | 1/20 | 0.38 |
| ▸ | HDAC6 | Q9UBN7 | 1/20 | 0.38 |
| ▸ | HDAC9 | Q9UKV0 | 1/20 | 0.38 |
| ▸ | HDAC5 | Q9UQL6 | 1/20 | 0.38 |
| ▸ | CA2 | P00918 | 1/20 | 0.38 |
| ▸ | CA4 | P22748 | 1/20 | 0.38 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Acetic Acid SCHEMBL106040 | 0.86 | CA2 (0.44) | CES2CES1SMN1; SMN2MAPTCA2 | |
| Butyric Acid SCHEMBL107168 | 0.86 | HDAC3 (0.54) | CES2CES1SMN1; SMN2L3MBTL1MAPT | |
| Malonic Acid SCHEMBL105770 | 0.84 | CA4 (0.46) | CES2CES1SMN1; SMN2L3MBTL1MAPT | |
| Succinic Acid SCHEMBL105103 | 0.84 | HDAC3 (0.48) | CES2CES1SMN1; SMN2L3MBTL1MAPT | |
| Bicarbonate SCHEMBL105292 | 0.84 | CA2 (0.46) | CES2CES1SMN1; SMN2L3MBTL1MAPT | |
| Bicarbonate SCHEMBL105290 | 0.84 | CA2 (0.46) | CES2CES1SMN1; SMN2L3MBTL1MAPT | |
| Valeric Acid SCHEMBL106459 | 0.83 | CA1 (0.55) | CES2CES1HDAC3HDAC4HDAC1 | |
| Chloroacetic Acid SCHEMBL106471 | 0.83 | ALDH1A1 (0.45) | CES2CES1SMN1; SMN2L3MBTL1MAPT | |
| Oxalic Acid SCHEMBL105013 | 0.81 | CA4 (0.44) | CES2CES1SMN1; SMN2L3MBTL1MAPT | |
| Hexanoate SCHEMBL105634 | 0.81 | CES2 (0.53) | CES2CES1HDAC3HDAC4HDAC1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 120 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6479210-B2 | COMPRISING AN ORGANIC MATERIAL CONTAINING SUBSTITUENT(S) CAPABLE OF BEING RELEASED IN THE PRESENCE OF ACID, AND ACID GENERATORS OF AT LEAST ONE ONIUM SALT AND SULFONE AND/OR SULFONATE COMPOUNDS; RESOLUTION, SENSITIVITY | CLARIANT FINANCE (BVI) LIMITED (VG) | 2002-11-12 | — | — | US | claimed |
| US-20010036589-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION | MERCK PATENT GMBH (DE) | 2001-11-01 | — | — | US | claimed |
| EP-0989459-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION | Clariant Finance (BVI) Limited (VG) | 2000-03-29 | — | — | EP | claimed |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-04-30 | — | — | US | disclosed |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-12 | — | — | US | disclosed |
| EP-4692941-A2 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-02-11 | — | — | EP | disclosed |
| EP-4621486-A2 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-24 | — | — | EP | disclosed |
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-18 | — | — | US | disclosed |
| EP-4592299-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-30 | — | — | EP | disclosed |
| US-20250237953-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-24 | — | — | US | disclosed |
| US-12332567-B2 | Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-06-17 | — | — | US | disclosed |
| US-20050176982-A1 | Method for producing onium salt derivatives, and novel onium salt derivatives | TOYO GOSEI KOGYO CO., LTD. (JP) | 2005-08-11 | — | — | US | disclosed |
| US-6620957-B1 | Process for producing onium salt derivative and novel onium salt derivative | TOYO GOSEI KOGYO CO., LTD. (JP) | 2003-09-16 | — | — | US | disclosed |
| US-6527966-B1 | Forming a pattern composed of an etchable layer by conducting dry etching of an etchable layer formed on a substrate for semiconductor through a mask of patterned radiation sensitive material coating formed on the etchable layer | CLARIANT FINANCE (BVI) LIMITED (VG) | 2003-03-04 | — | — | US | disclosed |
| US-6479210-B2 | COMPRISING AN ORGANIC MATERIAL CONTAINING SUBSTITUENT(S) CAPABLE OF BEING RELEASED IN THE PRESENCE OF ACID, AND ACID GENERATORS OF AT LEAST ONE ONIUM SALT AND SULFONE AND/OR SULFONATE COMPOUNDS; RESOLUTION, SENSITIVITY | CLARIANT FINANCE (BVI) LIMITED (VG) | 2002-11-12 | — | — | US | disclosed |
| US-20020113035-A1 | Method for forming hole pattern | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2002-08-22 | — | — | US | disclosed |
| EP-1164127-A1 | PROCESS FOR PRODUCING ONIUM SALT DERIVATIVE AND NOVEL ONIUM SALT DERIVATIVE | Toyo Gosei Kogyo Co., Ltd. (JP) | 2001-12-19 | — | — | EP | disclosed |
| US-20010036589-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION | MERCK PATENT GMBH (DE) | 2001-11-01 | — | — | US | disclosed |
| EP-0989459-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION | Clariant Finance (BVI) Limited (VG) | 2000-03-29 | — | — | EP | disclosed |
| EP-0989460-A1 | PATTERN FORMING METHOD | Clariant Finance (BVI) Limited (VG) | 2000-03-29 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-12332567-B2 | Composition for forming silicon-containing resist underlayer film, patterning process, and silicon compound | SMC1A, CDH1, SMC4 | CES2 2501/4885CES1 1861/4885SMN1; SMN2 2267/4885 |
| US-20050176982-A1 | Method for producing onium salt derivatives, and novel onium salt derivatives | STS, NANS, GRIK5 | CES2 1680/4885CES1 2123/4885SMN1; SMN2 4269/4885 |
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | ASH2L, PUF60, IDUA | CES2 4176/4885CES1 4246/4885SMN1; SMN2 2734/4885 |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | EFNA1, EPHA4, ETV6 | CES2 936/4885CES1 2618/4885SMN1; SMN2 3090/4885 |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SMC1A, SPOUT1, LBR | CES2 2647/4885CES1 3024/4885SMN1; SMN2 612/4885 |
| US-20250237953-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SMURF1, OSR1, SIK1 | CES2 4119/4885CES1 3505/4885SMN1; SMN2 1565/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.