Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of Adipic Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LMNA | P02545 | 2/20 | 0.55 |
| ▸ | TSHR | P16473 | 5/20 | 0.52 |
| ▸ | NFKB1 | P19838 | 1/20 | 0.52 |
| ▸ | PMP22 | Q01453 | 1/20 | 0.52 |
| ▸ | BBOX1 | O75936 | 3/20 | 0.50 |
| ▸ | AKR1B1 | P15121 | 1/20 | 0.50 |
| ▸ | PPARG | P37231 | 6/20 | 0.48 |
| ▸ | PPARD | Q03181 | 6/20 | 0.48 |
| ▸ | PPARA | Q07869 | 6/20 | 0.48 |
| ▸ | HDAC11 | Q96DB2 | 5/20 | 0.48 |
| ▸ | GPR84 | Q9NQS5 | 4/20 | 0.48 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.48 |
| ▸ | TLR2 | O60603 | 2/20 | 0.48 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.48 |
| ▸ | FABP4 | P15090 | 2/20 | 0.48 |
| ▸ | PTPN1 | P18031 | 2/20 | 0.48 |
| ▸ | SLC22A6 | Q4U2R8 | 1/20 | 0.48 |
| ▸ | SLC22A8 | Q8TCC7 | 1/20 | 0.48 |
| ▸ | MEN1 | O00255 | 1/20 | 0.48 |
| ▸ | ESR1 | P03372 | 1/20 | 0.48 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Sebacic Acid SCHEMBL5874508 | 0.98 | TSHR (0.57) | LMNATSHRNFKB1PMP22BBOX1 | |
| Glutarate SCHEMBL104190 | 0.95 | SLC22A6 (0.55) | LMNATSHRNFKB1PMP22BBOX1 | |
| Adipic Acid SCHEMBL106656 | 0.89 | BBOX1 (0.58) | BBOX1FABP3CA1 | |
| Adipic Acid SCHEMBL105952 | 0.87 | LMNA (0.65) | LMNATSHRNFKB1PMP22AKR1B1 | |
| Tetramethylammonium Ion SCHEMBL8438225 | 0.87 | BBOX1 (0.56) | BBOX1FABP3CA1 | |
| Adipic Acid SCHEMBL105192 | 0.87 | LMNA (0.65) | LMNATSHRNFKB1PMP22AKR1B1 | |
| Adipic Acid SCHEMBL8028995 | 0.87 | BBOX1 (0.56) | BBOX1FABP3CA1 | |
| Adipic Acid SCHEMBL21489542 | 0.87 | LMNA (0.65) | LMNATSHRNFKB1PMP22AKR1B1 | |
| Adipic Acid SCHEMBL30776749 | 0.87 | LMNA (0.65) | LMNATSHRNFKB1PMP22AKR1B1 | |
| Sebacic Acid SCHEMBL5874500 | 0.87 | BBOX1 (0.56) | BBOX1FABP3CA1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 47 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-4885115-A | Liquid electrolyte for use in electrolytic capacitor | NIPPON CHEMI-CON CORPORATION (JP) | 1989-12-05 | — | — | US | claimed |
| EP-2426558-B1 | Silicon-containing film-forming composition, silicon-containing film-formed substrate, and patterning process | SHINETSU CHEMICAL CO (JP) | 2018-10-24 | — | — | EP | disclosed |
| EP-2500775-B1 | PATTERNING PROCESS AND COMPOSITION FOR FORMING SILICON-CONTAINING FILM USABLE THEREFOR | SHINETSU CHEMICAL CO (JP) | 2018-01-03 | — | — | EP | disclosed |
| US-8951711-B2 | Patterning process and composition for forming silicon-containing film usable therefor | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-02-10 | — | — | US | disclosed |
| US-20140342289-A1 | PATTERNING PROCESS AND COMPOSITION FOR FORMING SILICON-CONTAINING FILM USABLE THEREFOR | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-11-20 | — | — | US | disclosed |
| US-8852844-B2 | Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-10-07 | — | — | US | disclosed |
| US-8835102-B2 | Patterning process and composition for forming silicon-containing film usable therefor | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-09-16 | — | — | US | disclosed |
| EP-2172807-B1 | Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process | SHINETSU CHEMICAL CO (JP) | 2014-06-18 | — | — | EP | disclosed |
| EP-2172808-B1 | Metal oxide-containing film-forming composition metal oxide-containing film-formed substrate, and patterning process | SHINETSU CHEMICAL CO (JP) | 2014-06-04 | — | — | EP | disclosed |
| US-8652267-B2 | Coated-type silicon-containing film stripping process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-02-18 | — | — | US | disclosed |
| US-20080026322-A1 | Hydrolytic condensation of organosilicon compound using acid and basic catalyst with Group 1a hydroxide, organic acid and solvent; efficiency patterning photoresist film | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-31 | — | — | US | disclosed |
| EP-1867681-A1 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | Shin-Etsu Chemical Co., Ltd. (JP) | 2007-12-19 | — | — | EP | disclosed |
| EP-1845132-A2 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | Shinetsu Chemical Co., Ltd. (JP) | 2007-10-17 | — | — | EP | disclosed |
| US-20070238300-A1 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | SHIN-ETSU CHEMICAL CO., LTD. | 2007-10-11 | — | — | US | disclosed |
| US-7128976-B2 | Composition for film formation, method of film formation, and silica-based film | JSR CORPORATION (JP) | 2006-10-31 | — | — | US | disclosed |
| US-20030091838-A1 | Composition for film formation, method of film formation, and silica-based film | JSR CORPORATION (JP) | 2003-05-15 | — | — | US | disclosed |
| EP-0684619-B1 | Ion-conductive polymer electrolyte and electrolytic capacitor using the same | MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (JP) | 2000-03-08 | — | — | EP | disclosed |
| US-4885115-A | Liquid electrolyte for use in electrolytic capacitor | NIPPON CHEMI-CON CORPORATION (JP) | 1989-12-05 | — | — | US | disclosed |
| US-4734821-A | AMMONIUM SALT OF CARBOXYLIC ACID | ASAHI GLASS COMPANY LTD. (JP) | 1988-03-29 | — | — | US | disclosed |
| US-4255553-A | COMPRISING A COMPOUND HAVING AT LEAST TWO EPOXY GROUPS, A POLYESTER OR ACRYLIC RESIN, AND A QUARTERNARY AMMONIUM CARBOXYLATE AS CATALYST | TOYO BOSEKI KABUSHIKI KAISHA (JP) | 1981-03-10 | — | — | US | disclosed |