Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA2 | P00918 | 9/20 | 0.41 |
| ▸ | CA1 | P00915 | 6/20 | 0.36 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.35 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.33 |
| ▸ | ATM | Q13315 | 1/20 | 0.32 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.31 |
| ▸ | TSHR | P16473 | 1/20 | 0.31 |
| ▸ | NFKB1 | P19838 | 1/20 | 0.31 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL106127 | 0.97 | CA2 (0.41) | CA2CA1MAPK1ALDH1A1ATM | |
| SCHEMBL1942207 | 0.97 | CA2 (0.41) | CA2CA1MAPK1ALDH1A1ATM | |
| SCHEMBL107363 | 0.90 | CA2 (0.35) | CA2CA1CYP3A4TSHRNFKB1 | |
| SCHEMBL105557 | 0.86 | CA2 (0.35) | CA2CA1CYP3A4TSHRNFKB1 | |
| SCHEMBL109540 | 0.83 | CA2 (0.31) | CA2ALDH1A1 | |
| SCHEMBL106374 | 0.80 | CA2 (0.31) | CA2ALDH1A1 | |
| SCHEMBL939519 | 0.78 | CA2 (0.39) | CA2CA1MAPK1ALDH1A1ATM | |
| SCHEMBL2383658 | 0.76 | CA1 (0.36) | CA1ALDH1A1ATM | |
| SCHEMBL10935669 | 0.75 | ALDH1A1 (0.42) | CA1ALDH1A1ATMTSHR | |
| SCHEMBL2454759 | 0.74 | CA2 (0.32) | CA2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 50 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-12 | — | — | US | disclosed |
| EP-4692941-A2 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-02-11 | — | — | EP | disclosed |
| US-20230408922-A1 | APPLICATION LIQUID FOR OPTICAL MEMBER, POLYMER, PHOTOSENSITIVE APPLICATION LIQUID, METHOD FOR PRODUCING CURED FILM, METHOD FOR PRODUCING PATTERNED CURED FILM, AND METHOD FOR PRODUCING POLYMER | CENTRAL GLASS COMPANY, LIMITED (JP) | 2023-12-21 | — | — | US | disclosed |
| CN-116601244-A | Coating liquid for optical member, polymer, cured film, photosensitive coating liquid, pattern cured film, optical member, solid-state imaging element, display device, silicone compound, stabilizer used in coating liquid, method for producing cured film, method for producing pattern cured film, and method for producing polymer | 中央硝子株式会社 | 2023-08-15 | — | — | CN | disclosed |
| US-20220282100-A1 | METAL OXIDE FILM-FORMING COMPOSITION, AND METHOD FOR PRODUCING METAL OXIDE FILM USING THE SAME | TOKYO OHKA KOGYO CO., LTD. (JP) | 2022-09-08 | — | — | US | disclosed |
| US-20220274912-A1 | METAL OXIDE FILM-FORMING COMPOSITION, METHOD FOR PRODUCING METAL OXIDE FILM USING THE SAME, TERTIARY ALKYLOXYCARBONYL GROUP-MODIFIED BISNAPHTHOL FLUORENE COMPOUND, AND METHOD FOR PRODUCING THE SAME | TOKYO OHKA KOGYO CO., LTD. (JP) | 2022-09-01 | — | — | US | disclosed |
| US-20210200098-A1 | PATTERN FORMING METHOD AND RESIST LAMINATE FOR ORGANIC SOLVENT DEVELOPMENT | FUJIFILM CORPORATION (JP) | 2021-07-01 | — | — | US | disclosed |
| US-20190025699-A1 | FILM-FORMING MATERIAL FOR RESIST PROCESS AND PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2019-01-24 | — | — | US | disclosed |
| EP-2518562-B1 | A patterning process | SHINETSU CHEMICAL CO (JP) | 2019-01-16 | — | — | EP | disclosed |
| EP-2426558-B1 | Silicon-containing film-forming composition, silicon-containing film-formed substrate, and patterning process | SHINETSU CHEMICAL CO (JP) | 2018-10-24 | — | — | EP | disclosed |
| US-20120238095-A1 | PATTERNING PROCESS AND COMPOSITION FOR FORMING SILICON-CONTAINING FILM USABLE THEREFOR | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-09-20 | — | — | US | disclosed |
| EP-2500775-A2 | Patterning process and composition for forming silicon-containing film usable therefor | Shin-Etsu Chemical Co., Ltd. (JP) | 2012-09-19 | — | — | EP | disclosed |
| EP-2426558-A1 | Silicon-containing film-forming composition, silicon-containing film-formed substrate, and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2012-03-07 | — | — | EP | disclosed |
| US-20120052685-A1 | SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM-FORMED SUBSTRATE, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-03-01 | — | — | US | disclosed |
| US-8029974-B2 | Metal oxide-containing film-forming composition, metal oxide-containing film-formed substrate, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-10-04 | — | — | US | disclosed |
| US-20100285407-A1 | Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-11-11 | — | — | US | disclosed |
| US-20100147334-A1 | Coated-type silicon-containing film stripping process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-17 | — | — | US | disclosed |
| EP-2196858-A1 | Coated-type silicon-containing film stripping process | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-06-16 | — | — | EP | disclosed |
| US-20100086872-A1 | Metal oxide-containing film-forming composition, metal oxide-containing film-formed substrate, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-04-08 | — | — | US | disclosed |
| EP-2172808-A1 | Metal oxide-containing film-forming composition metal oxide-containing film-formed substrate, and patterning process | Shinetsu Chemical Co., Ltd. (JP) | 2010-04-07 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20220274912-A1 | METAL OXIDE FILM-FORMING COMPOSITION, METHOD FOR PRODUCING METAL OXIDE FILM USING THE SAME, TERTIARY ALKYLOXYCARBONYL GROUP-MODIFIED BISNAPHTHOL FLUORENE COMPOUND, AND METHOD FOR PRODUCING THE SAME | MCOLN1, MCOLN2, H1-0 | CA2 1663/4885CA1 631/4885MAPK1 3768/4885 |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SMC1A, SPOUT1, LBR | CA2 2105/4885CA1 964/4885MAPK1 1151/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.