SCHEMBL107363

SCHEMBL107363

CCCOC(OCCC)(C(=O)[O-])C(=O)C(CC)CC.CCCOC(OCCC)(C(=O)[O-])C(=O)C(CC)CC.CCCOC(OCCC)(C(=O)[O-])C(=O)C(CC)CC.CCCOC(OCCC)(C(=O)[O-])C(=O)C(CC)CC.[Ti+4]

nearest known ligand 0.35

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
CA2 P00918 2/20 0.35
CYP3A4 P08684 2/20 0.32
TSHR P16473 2/20 0.32
NFKB1 P19838 2/20 0.32
NPSR1 Q6W5P4 2/20 0.32
CA1 P00915 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL105557 0.96 CA2 (0.35) CA2CYP3A4TSHRNFKB1NPSR1
SCHEMBL106786 0.90 CA2 (0.41) CA2CYP3A4TSHRNFKB1NPSR1
SCHEMBL1942207 0.86 CA2 (0.41) CA2CYP3A4TSHRNFKB1NPSR1
SCHEMBL106127 0.86 CA2 (0.41) CA2CYP3A4TSHRNFKB1NPSR1
SCHEMBL916578 0.81
SCHEMBL2454759 0.76 CA2 (0.32) CA2
SCHEMBL31398441 0.76 CA2 (0.36) CA2CA1
SCHEMBL2384263 0.74 FFAR3 (0.38) CA1
SCHEMBL109540 0.72 CA2 (0.31) CA2
SCHEMBL4622979 0.71 CES2 (0.40)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 47 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-02-12 US disclosed
EP-4692941-A2 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-02-11 EP disclosed
US-20230408922-A1 APPLICATION LIQUID FOR OPTICAL MEMBER, POLYMER, PHOTOSENSITIVE APPLICATION LIQUID, METHOD FOR PRODUCING CURED FILM, METHOD FOR PRODUCING PATTERNED CURED FILM, AND METHOD FOR PRODUCING POLYMER CENTRAL GLASS COMPANY, LIMITED (JP) 2023-12-21 US disclosed
US-11614686-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-03-28 US disclosed
US-20220282100-A1 METAL OXIDE FILM-FORMING COMPOSITION, AND METHOD FOR PRODUCING METAL OXIDE FILM USING THE SAME TOKYO OHKA KOGYO CO., LTD. (JP) 2022-09-08 US disclosed
US-20220274912-A1 METAL OXIDE FILM-FORMING COMPOSITION, METHOD FOR PRODUCING METAL OXIDE FILM USING THE SAME, TERTIARY ALKYLOXYCARBONYL GROUP-MODIFIED BISNAPHTHOL FLUORENE COMPOUND, AND METHOD FOR PRODUCING THE SAME TOKYO OHKA KOGYO CO., LTD. (JP) 2022-09-01 US disclosed
US-20210200098-A1 PATTERN FORMING METHOD AND RESIST LAMINATE FOR ORGANIC SOLVENT DEVELOPMENT FUJIFILM CORPORATION (JP) 2021-07-01 US disclosed
US-20190258160-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-08-22 US disclosed
US-20190025699-A1 FILM-FORMING MATERIAL FOR RESIST PROCESS AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2019-01-24 US disclosed
EP-2518562-B1 A patterning process SHINETSU CHEMICAL CO (JP) 2019-01-16 EP disclosed
US-20120238095-A1 PATTERNING PROCESS AND COMPOSITION FOR FORMING SILICON-CONTAINING FILM USABLE THEREFOR SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-09-20 US disclosed
EP-2500775-A2 Patterning process and composition for forming silicon-containing film usable therefor Shin-Etsu Chemical Co., Ltd. (JP) 2012-09-19 EP disclosed
EP-2426558-A1 Silicon-containing film-forming composition, silicon-containing film-formed substrate, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2012-03-07 EP disclosed
US-20120052685-A1 SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM-FORMED SUBSTRATE, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-03-01 US disclosed
US-8029974-B2 Metal oxide-containing film-forming composition, metal oxide-containing film-formed substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-10-04 US disclosed
US-20100285407-A1 Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-11-11 US disclosed
US-20100147334-A1 Coated-type silicon-containing film stripping process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-17 US disclosed
EP-2196858-A1 Coated-type silicon-containing film stripping process Shin-Etsu Chemical Co., Ltd. (JP) 2010-06-16 EP disclosed
US-20100086872-A1 Metal oxide-containing film-forming composition, metal oxide-containing film-formed substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-04-08 US disclosed
EP-2172808-A1 Metal oxide-containing film-forming composition metal oxide-containing film-formed substrate, and patterning process Shinetsu Chemical Co., Ltd. (JP) 2010-04-07 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20220274912-A1 METAL OXIDE FILM-FORMING COMPOSITION, METHOD FOR PRODUCING METAL OXIDE FILM USING THE SAME, TERTIARY ALKYLOXYCARBONYL GROUP-MODIFIED BISNAPHTHOL FLUORENE COMPOUND, AND METHOD FOR PRODUCING THE SAME MCOLN1, MCOLN2, H1-0 CA2 1663/4885CYP3A4 2272/4885TSHR 2098/4885
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SMC1A, SPOUT1, LBR CA2 2105/4885CYP3A4 2742/4885TSHR 446/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.