SCHEMBL106864

SCHEMBL106864

CCNCCCCCN1CCN(c2ccccc2)CC1

nearest known ligand 0.71

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
KCNH2 Q12809 3/20 0.71
DRD2 P14416 7/20 0.59
SIGMAR1 Q99720 3/20 0.59
HTR1A P08908 6/20 0.59
HTR2A P28223 3/20 0.59
HTR7 P34969 3/20 0.59
HTR6 P50406 3/20 0.59
DRD4 P21917 2/20 0.59
DRD3 P35462 2/20 0.58
CYP2D6 P10635 1/20 0.56
OPRM1 P35372 1/20 0.55

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15471059 0.98 KCNH2 (0.68) KCNH2DRD2SIGMAR1HTR1AHTR2A
SCHEMBL8735992 0.86 DRD2 (0.60) KCNH2DRD2SIGMAR1HTR1AHTR2A
SCHEMBL4528457 0.84 KCNH2 (1.00) KCNH2DRD2SIGMAR1HTR1AHTR2A
SCHEMBL15920946 0.83 KCNH2 (0.83) KCNH2DRD2SIGMAR1HTR1AHTR2A
SCHEMBL27695348 0.83 KCNH2 (0.83) KCNH2DRD2SIGMAR1HTR1AHTR2A
SCHEMBL14802535 0.82 KCNH2 (0.65) KCNH2DRD2SIGMAR1HTR1AHTR2A
SCHEMBL7594226 0.81 KCNH2 (0.79) KCNH2DRD2SIGMAR1HTR1AHTR2A
SCHEMBL155128 0.79 SIGMAR1 (0.79) KCNH2DRD2SIGMAR1HTR1AHTR2A
SCHEMBL5988317 0.79 KCNH2 (0.88) KCNH2DRD2SIGMAR1HTR1AHTR2A
SCHEMBL12612802 0.79 CYP2C19 (0.52)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 55 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11656548-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, mask blank with resist film, method for producing photomask, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-05-23 US disclosed
US-20170184973-A1 ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, METHOD OF PRODUCING ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, STORAGE CONTAINER OF ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD OF PRODUCING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-06-29 US disclosed
US-20170115571-A1 PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME FUJIFILM CORPORATION (JP) 2017-04-27 US disclosed
US-9551931-B2 Method of forming pattern, actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, process for manufacturing electronic device and electronic device FUJIFILM CORPORATION (JP) 2017-01-24 US disclosed
US-9482947-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device and electronic device FUJIFILM CORPORATION (JP) 2016-11-01 US disclosed
US-9429840-B2 Pattern forming method, composition used therein, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-08-30 US disclosed
US-9423689-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device and electronic device FUJIFILM CORPORATION (JP) 2016-08-23 US disclosed
US-9417528-B2 Pattern forming method, multi-layered resist pattern, multi-layered film for organic solvent development, resist composition, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-08-16 US disclosed
US-9383645-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, manufacturing method of electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-07-05 US disclosed
US-9250532-B2 Pattern forming method, multi-layered resist pattern, multi-layered film for organic solvent development, resist composition, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-02-02 US disclosed
US-20130078433-A1 ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM USING THE SAME, PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE, EACH USING THE SAME FUJIFILM CORPORATION (JP) 2013-03-28 US disclosed
US-20130078434-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, RESIST FILM, PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE, EACH USING THE SAME FUJIFILM CORPORATION (JP) 2013-03-28 US disclosed
US-20130034706-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PRODUCTION METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-02-07 US disclosed
US-20130004740-A1 ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND PATTERN FORMING METHOD EACH USING THE COMPOSITION, METHOD FOR PREPARING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-01-03 US disclosed
US-20130004739-A1 PATTERN FORMING METHOD, METHOD FOR PRODUCING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-01-03 US disclosed
US-20120219758-A1 RESIST COMPOSITION, RESIST FILM THEREFROM AND METHOD OF FORMING NEGATIVE PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-08-30 US disclosed
US-20120156617-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-06-21 US disclosed
US-20120135348-A1 ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2012-05-31 US disclosed
US-20120129100-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2012-05-24 US disclosed
US-20120058427-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-03-08 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20170184973-A1 ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, METHOD OF PRODUCING ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, STORAGE CONTAINER OF ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD OF PRODUCING ELECTRONIC DEVICE MYB, NCL, SMYD2 KCNH2 33/4885DRD2 2920/4885SIGMAR1 3601/4885
US-20120129100-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME ACTR8, RAD51, ACTR2 KCNH2 3831/4885DRD2 1429/4885SIGMAR1 3220/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.