Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of Tetrapropylammonium. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SLC22A1 | O15245 | 4/20 | 0.62 |
| ▸ | SLC22A2 | O15244 | 1/20 | 0.40 |
| ▸ | AKR1B1 | P15121 | 1/20 | 0.39 |
| ▸ | ALOX15 | P16050 | 2/20 | 0.39 |
| ▸ | FFAR3 | O14843 | 1/20 | 0.38 |
| ▸ | HDAC3 | O15379 | 1/20 | 0.38 |
| ▸ | HDAC1 | Q13547 | 1/20 | 0.38 |
| ▸ | HDAC2 | Q92769 | 1/20 | 0.38 |
| ▸ | HDAC8 | Q9BY41 | 1/20 | 0.38 |
| ▸ | PPARG | P37231 | 6/20 | 0.38 |
| ▸ | PPARD | Q03181 | 6/20 | 0.38 |
| ▸ | PPARA | Q07869 | 6/20 | 0.38 |
| ▸ | GPR84 | Q9NQS5 | 5/20 | 0.38 |
| ▸ | HDAC11 | Q96DB2 | 5/20 | 0.38 |
| ▸ | TSHR | P16473 | 4/20 | 0.38 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.38 |
| ▸ | TLR2 | O60603 | 2/20 | 0.38 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.38 |
| ▸ | FABP4 | P15090 | 2/20 | 0.38 |
| ▸ | PTPN1 | P18031 | 2/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Tetrapropylammonium SCHEMBL108599 | 0.90 | SLC22A1 (0.67) | SLC22A1SLC22A2AKR1B1ALOX15FFAR3 | |
| Tetrapropylammonium SCHEMBL29047727 | 0.90 | SLC22A1 (0.67) | SLC22A1SLC22A2AKR1B1ALOX15FFAR3 | |
| Tetrapropylammonium SCHEMBL27937663 | 0.88 | SLC22A1 (0.62) | SLC22A1SLC22A2AKR1B1ALOX15FFAR3 | |
| Tetrapropylammonium SCHEMBL4266805 | 0.87 | SLC22A1 (0.83) | SLC22A1SLC22A2ALOX15TSHRALDH1A1 | |
| Tetrapropylammonium SCHEMBL107313 | 0.86 | SLC22A1 (0.53) | SLC22A1SLC22A2AKR1B1FFAR3HDAC3 | |
| Tetrapropylammonium SCHEMBL27660127 | 0.85 | FFAR3 (0.59) | SLC22A1SLC22A2AKR1B1ALOX15FFAR3 | |
| Tetrapropylammonium SCHEMBL108600 | 0.85 | SLC22A1 (0.59) | SLC22A1SLC22A2AKR1B1FFAR3HDAC3 | |
| Tetrapropylammonium SCHEMBL27475565 | 0.84 | SLC22A1 (0.67) | SLC22A1SLC22A2AKR1B1ALOX15TSHR | |
| Tetrapropylammonium SCHEMBL27703787 | 0.84 | SLC22A1 (0.50) | SLC22A1SLC22A2AKR1B1ALOX15PPARG | |
| Tetrapropylammonium SCHEMBL28939470 | 0.83 | SLC22A1 (0.77) | SLC22A1SLC22A2ALOX15TSHRALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 126 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-04-30 | — | — | US | disclosed |
| EP-4700067-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPERSTRATE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-25 | — | — | EP | disclosed |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-12 | — | — | US | disclosed |
| EP-4692941-A2 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-02-11 | — | — | EP | disclosed |
| US-20260029706-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPER STRAIGHT | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-29 | — | — | US | disclosed |
| EP-4621486-A2 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-24 | — | — | EP | disclosed |
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-18 | — | — | US | disclosed |
| EP-4592299-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-30 | — | — | EP | disclosed |
| US-20250237953-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-24 | — | — | US | disclosed |
| US-12332565-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-06-17 | — | — | US | disclosed |
| EP-2011829-A1 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | Shin-Etsu Chemical Co., Ltd. (JP) | 2009-01-07 | — | — | EP | disclosed |
| EP-1867681-B1 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | SHINETSU CHEMICAL CO (JP) | 2008-12-31 | — | — | EP | disclosed |
| US-20080274432-A1 | SILICONE-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-11-06 | — | — | US | disclosed |
| US-20080026322-A1 | Hydrolytic condensation of organosilicon compound using acid and basic catalyst with Group 1a hydroxide, organic acid and solvent; efficiency patterning photoresist film | SHIN-ETSU CHEMICAL CO., LTD. | 2008-01-31 | — | — | US | disclosed |
| EP-1867681-A1 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | Shin-Etsu Chemical Co., Ltd. (JP) | 2007-12-19 | — | — | EP | disclosed |
| EP-1845132-A2 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | Shinetsu Chemical Co., Ltd. (JP) | 2007-10-17 | — | — | EP | disclosed |
| US-20070238300-A1 | Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method | SHIN-ETSU CHEMICAL CO., LTD. | 2007-10-11 | — | — | US | disclosed |
| US-7128976-B2 | Composition for film formation, method of film formation, and silica-based film | JSR CORPORATION (JP) | 2006-10-31 | — | — | US | disclosed |
| US-20030091838-A1 | Composition for film formation, method of film formation, and silica-based film | JSR CORPORATION (JP) | 2003-05-15 | — | — | US | disclosed |
| US-5911099-A | Electroconductiive member and electrophotogrpahic apparatus | BRIDGESTONE CORPORATION (JP) | 1999-06-08 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | ASH2L, PUF60, IDUA | SLC22A1 1953/4885SLC22A2 2428/4885AKR1B1 1216/4885 |
| US-12332565-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | RPS4X, SIK3, MLX | SLC22A1 1843/4885SLC22A2 1825/4885AKR1B1 3517/4885 |
| US-20260029706-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING FILM, METHOD FOR FORMING FILM, AND SUPER STRAIGHT | SMC2, F12, SMC1A | SLC22A1 2667/4885SLC22A2 3137/4885AKR1B1 1585/4885 |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | EFNA1, EPHA4, ETV6 | SLC22A1 4619/4885SLC22A2 4601/4885AKR1B1 4675/4885 |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SMC1A, SPOUT1, LBR | SLC22A1 2467/4885SLC22A2 2619/4885AKR1B1 629/4885 |
| US-20250237953-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SMURF1, OSR1, SIK1 | SLC22A1 1154/4885SLC22A2 1999/4885AKR1B1 841/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.