SCHEMBL109030

SCHEMBL109030

CC(Cc1ccccc1)O[SiH2]OC(C)Cc1ccccc1

nearest known ligand 0.58

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
TAAR1 Q96RJ0 5/20 0.58
SIGMAR1 Q99720 4/20 0.58
SLC6A2 P23975 2/20 0.58
SLC6A4 P31645 2/20 0.58
MAOA P21397 1/20 0.58
SLC6A3 Q01959 1/20 0.58
CYP2A6 P11509 1/20 0.58
ADORA2A P29274 1/20 0.58
ADORA1 P30542 1/20 0.58
CYP2D6 P10635 1/20 0.54
EPHX1 P07099 1/20 0.50
SLC18A2 Q05940 1/20 0.48
ANPEP P15144 1/20 0.48
MEN1 O00255 1/20 0.47
KMT2A Q03164 1/20 0.47
TRPA1 O75762 1/20 0.47

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10794922 0.83 SIGMAR1 (0.48) TAAR1SIGMAR1SLC6A2SLC6A4MAOA
SCHEMBL104982 0.81 TSHR (0.43) TAAR1SIGMAR1SLC6A2SLC6A4MAOA
SCHEMBL1256615 0.78 SIGMAR1 (0.58) TAAR1SIGMAR1SLC6A2SLC6A4MAOA
SCHEMBL412663 0.78 SIGMAR1 (0.58) TAAR1SIGMAR1SLC6A2SLC6A4MAOA
SCHEMBL109171 0.77 TAAR1 (0.47) TAAR1SIGMAR1SLC6A2SLC6A4MAOA
SCHEMBL13006663 0.76 SIGMAR1 (0.56) TAAR1SIGMAR1SLC6A2SLC6A4MAOA
SCHEMBL13189946 0.76 SIGMAR1 (0.56) TAAR1SIGMAR1SLC6A2SLC6A4MAOA
SCHEMBL2555409 0.76 SIGMAR1 (0.56) TAAR1SIGMAR1SLC6A2SLC6A4MAOA
SCHEMBL6270810 0.74 TAAR1 (0.60) TAAR1SIGMAR1SLC6A2SLC6A4MAOA
SCHEMBL2239544 0.74 SIGMAR1 (0.54) TAAR1SIGMAR1SLC6A2SLC6A4MAOA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 163 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2628744-B1 Silicon-containing surface modifier, resist underlayer film composition containing this, and patterning process SHINETSU CHEMICAL CO (JP) 2016-11-30 EP claimed
EP-2628745-B1 Silicon-containing surface modifier, resist lower layer film-forming composition containing the same, and patterning process SHINETSU CHEMICAL CO (JP) 2015-03-25 EP claimed
US-20260118767-A1 REVERSE PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-04-30 US disclosed
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-02-12 US disclosed
EP-4692941-A2 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-02-11 EP disclosed
EP-4660703-A2 METAL-CONTAINING FILM PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2025-12-10 EP disclosed
US-20250372377-A1 METAL-CONTAINING FILM PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-04 US disclosed
EP-4621486-A2 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-24 EP disclosed
US-20250289931-A1 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-18 US disclosed
EP-4592299-A1 SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-30 EP disclosed
EP-4592752-A2 COMPOSITION FOR FORMING METAL-CONTAINING FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-30 EP disclosed
US-20090011372-A1 SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-01-08 US disclosed
EP-2011830-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method Shin-Etsu Chemical Co., Ltd. (JP) 2009-01-07 EP disclosed
EP-2011829-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method Shin-Etsu Chemical Co., Ltd. (JP) 2009-01-07 EP disclosed
EP-1867681-B1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method SHINETSU CHEMICAL CO (JP) 2008-12-31 EP disclosed
US-20080274432-A1 SILICONE-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, SILICON-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-11-06 US disclosed
US-20080026322-A1 Hydrolytic condensation of organosilicon compound using acid and basic catalyst with Group 1a hydroxide, organic acid and solvent; efficiency patterning photoresist film SHIN-ETSU CHEMICAL CO., LTD. 2008-01-31 US disclosed
EP-1867681-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method Shin-Etsu Chemical Co., Ltd. (JP) 2007-12-19 EP disclosed
EP-1845132-A2 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method Shinetsu Chemical Co., Ltd. (JP) 2007-10-17 EP disclosed
US-20070238300-A1 Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method SHIN-ETSU CHEMICAL CO., LTD. 2007-10-11 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20250289931-A1 POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS ASH2L, PUF60, IDUA TAAR1 608/4885SIGMAR1 180/4885SLC6A2 893/4885
US-20260118767-A1 REVERSE PATTERNING PROCESS EFNA1, EPHA4, ETV6 TAAR1 2558/4885SIGMAR1 72/4885SLC6A2 2693/4885
US-20260044081-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS SMC1A, SPOUT1, LBR TAAR1 244/4885SIGMAR1 9/4885SLC6A2 1865/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.