Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CTSK | P43235 | 1/20 | 0.36 |
| ▸ | PRKCA | P17252 | 2/20 | 0.34 |
| ▸ | CA1 | P00915 | 1/20 | 0.32 |
| ▸ | CA2 | P00918 | 1/20 | 0.32 |
| ▸ | PRKCD | Q05655 | 1/20 | 0.32 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.31 |
| ▸ | AKR1A1 | P14550 | 1/20 | 0.31 |
| ▸ | CHRM3 | P20309 | 1/20 | 0.31 |
| ▸ | HTR2A | P28223 | 1/20 | 0.31 |
| ▸ | HTR2C | P28335 | 1/20 | 0.31 |
| ▸ | ADRA1A | P35348 | 1/20 | 0.31 |
| ▸ | HRH1 | P35367 | 1/20 | 0.31 |
| ▸ | DRD3 | P35462 | 1/20 | 0.31 |
| ▸ | SLC6A3 | Q01959 | 1/20 | 0.31 |
| ▸ | HDAC1 | Q13547 | 1/20 | 0.31 |
| ▸ | HDAC2 | Q92769 | 1/20 | 0.31 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.31 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.30 |
| ▸ | TSHR | P16473 | 1/20 | 0.30 |
| ▸ | NFKB1 | P19838 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL110706 | 0.81 | CTSK (0.34) | CTSKPRKCACA1CA2PRKCD | |
| SCHEMBL107639 | 0.80 | CTSK (0.38) | CTSKPRKCACA1CA2PRKCD | |
| SCHEMBL21074654 | 0.79 | CTSK (0.35) | CTSKPRKCACA1CA2PRKCD | |
| SCHEMBL110678 | 0.79 | CTSK (0.36) | CTSKPRKCA | |
| SCHEMBL18199013 | 0.79 | CTSK (0.33) | CTSKPRKCA | |
| SCHEMBL20455854 | 0.78 | CTSK (0.37) | CTSKPRKCAPRKCDCHRM1AKR1A1 | |
| SCHEMBL17378156 | 0.78 | TSHR (0.37) | HTR2AHTR2CADRA1ADRD3SLC6A3 | |
| SCHEMBL13744339 | 0.76 | ABHD6 (0.32) | CA1CA2 | |
| SCHEMBL18199010 | 0.75 | CTSK (0.31) | CTSK | |
| SCHEMBL111863 | 0.74 | CTSK (0.33) | CTSK |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 50 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9709891-B2 | Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2017-07-18 | — | — | US | disclosed |
| US-20160349619-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2016-12-01 | — | — | US | disclosed |
| US-9465298-B2 | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method | FUJIFILM CORPORATION (JP) | 2016-10-11 | — | — | US | disclosed |
| US-20160103395-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2016-04-14 | — | — | US | disclosed |
| US-9291904-B2 | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method | FUJIFILM CORPORATION (JP) | 2016-03-22 | — | — | US | disclosed |
| US-9250530-B2 | — | — | 2016-02-02 | — | — | US | disclosed |
| US-9081279-B2 | Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2015-07-14 | — | — | US | disclosed |
| US-20150168838-A1 | POSITIVE RESIST COMPOSITION, RESIN USED FOR THE POSITIVE RESIST COMPOSITION, COMPOUND USED FOR SYNTHESIS OF THE RESIN AND PATTERN FORMING METHOD USING THE POSITIVE RESIST COMPOSITION | FUJIFILM CORPORATION (JP) | 2015-06-18 | — | — | US | disclosed |
| US-9046782-B2 | Resist composition for negative tone development and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2015-06-02 | — | — | US | disclosed |
| US-20150079522-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2015-03-19 | — | — | US | disclosed |
| US-20100239984-A1 | PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2010-09-23 | — | — | US | disclosed |
| US-20100190106-A1 | RESIST COMPOSITION FOR NEGATIVE TONE DEVELOPMENT AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-07-29 | — | — | US | disclosed |
| US-20100167201-A1 | RESIST COMPOSITION FOR NEGATIVE TONE DEVELOPMENT AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-07-01 | — | — | US | disclosed |
| US-20100040972-A1 | PATTERN FORMING METHOD, AND RESIST COMPOSITION, DEVELOPER AND RINSING SOLUTION USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2010-02-18 | — | — | US | disclosed |
| US-20100040971-A1 | PATTERN FORMING METHOD, AND RESIST COMPOSITION, DEVELOPER AND RINSING SOLUTION USED IN THE PATTERN FORMING METHOD | FUJIFILM Corporaion (JP) | 2010-02-18 | — | — | US | disclosed |
| US-20090011366-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION TO BE USED IN THE PATTERN FORMING METHOD, NEGATIVE DEVELOPING SOLUTION TO BE USED IN THE PATTERN FORMING METHOD AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT TO BE USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2009-01-08 | — | — | US | disclosed |
| US-20080261150-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-10-23 | — | — | US | disclosed |
| US-20080187860-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-08-07 | — | — | US | disclosed |
| US-20080081290-A1 | RESIST COMPOSITION, RESIN FOR USE IN THE RESIST COMPOSITION, COMPOUND FOR USE IN THE SYNTHESIS OF THE RESIN, AND PATTERN-FORMING METHOD USING THE RESIST COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| US-20070134588-A1 | Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition | FUJIFILM CORPORATION (JP) | 2007-06-14 | — | — | US | disclosed |