Predicted protein targets (top 18)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GPR3 | P46089 | 2/20 | 0.42 |
| ▸ | CA1 | P00915 | 2/20 | 0.38 |
| ▸ | CA2 | P00918 | 2/20 | 0.38 |
| ▸ | CA9 | Q16790 | 2/20 | 0.38 |
| ▸ | HTR6 | P50406 | 1/20 | 0.36 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.35 |
| ▸ | KEAP1 | Q14145 | 1/20 | 0.35 |
| ▸ | CA12 | O43570 | 1/20 | 0.35 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.35 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.34 |
| ▸ | KCNH2 | Q12809 | 6/20 | 0.34 |
| ▸ | ACHE | P22303 | 1/20 | 0.34 |
| ▸ | RORA | P35398 | 1/20 | 0.34 |
| ▸ | RORC | P51449 | 1/20 | 0.34 |
| ▸ | NR1H2 | P55055 | 1/20 | 0.34 |
| ▸ | NR1H4 | Q96RI1 | 1/20 | 0.34 |
| ▸ | RECQL | P46063 | 1/20 | 0.33 |
| ▸ | NLRP3 | Q96P20 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Trifluoromethanesulfonic Acid SCHEMBL31235599 | 1.00 | GPR3 (0.42) | GPR3CA1CA2CA9HTR6 | |
| Trifluoromethanesulfonic Acid SCHEMBL36034 | 0.91 | GPR3 (0.38) | GPR3CA1CA2CA9HTR6 | |
| Trifluoromethanesulfonic Acid SCHEMBL31564951 | 0.91 | GPR3 (0.38) | GPR3CA1CA2CA9HTR6 | |
| Trifluoromethanesulfonic Acid SCHEMBL547976 | 0.91 | GPR3 (0.38) | GPR3CA1CA2CA9HTR6 | |
| Trifluoromethanesulfonic Acid SCHEMBL29402880 | 0.91 | GPR3 (0.38) | GPR3CA1CA2CA9HTR6 | |
| Trifluoromethanesulfonic Acid SCHEMBL645454 | 0.87 | GPR3 (0.40) | GPR3CA1CA2CA9HTR6 | |
| Trifluoromethanesulfonic Acid SCHEMBL31168285 | 0.87 | GPR3 (0.40) | GPR3CA1CA2CA9HTR6 | |
| Trifluoromethanesulfonic Acid SCHEMBL3956531 | 0.86 | CYP1A2 (0.39) | CA1CA2CA9CYP1A2KEAP1 | |
| Trifluoromethanesulfonic Acid SCHEMBL31168264 | 0.83 | KCNH2 (0.39) | GPR3CA1CA2CA9KEAP1 | |
| Trifluoromethanesulfonic Acid SCHEMBL646691 | 0.83 | KCNH2 (0.39) | GPR3CA1CA2CA9KEAP1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 597 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260146026-A1 | COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT | ADEKA CORPORATION (JP) | 2026-05-28 | — | — | US | disclosed |
| US-20260008932-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-08 | — | — | US | disclosed |
| EP-4675357-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-01-07 | — | — | EP | disclosed |
| EP-4610254-A1 | COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT | ADEKA CORPORATION (JP) | 2025-09-03 | — | — | EP | disclosed |
| US-20250231491-A1 | PHOTOLITHOGRAPHIC METHOD USING SILICON PHOTORESIST | SUNTIFIC MATERIALS (WEIFANG)., LTD. (CN) | 2025-07-17 | — | — | US | disclosed |
| US-20250231492-A1 | MANUFACTURE OF INTEGRATED CIRUIT USING POSITIVE TONE PHOTOPATTERNABLE DIELECTRIC INCLUDING HIGH SILICON CONTENT POLYSILSESQUIOXANE | SUNTIFIC MATERIALS (WEIFANG)., LTD. (CN) | 2025-07-17 | — | — | US | disclosed |
| CN-120019045-A | Compound, composition, cured product, method for producing cured product, and method for producing electronic component | 株式会社艾迪科 | 2025-05-16 | — | — | CN | disclosed |
| US-20240352203-A1 | FILM-FORMING MATERIAL FOR SEMICONDUCTOR, MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, PROCESS MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, UNDERLAYER FILM-FORMING MATERIAL, UNDERLAYER FILM, AND SEMICONDUCTOR DEVICE | ADEKA CORPORATION (JP) | 2024-10-24 | — | — | US | disclosed |
| EP-4375750-A1 | FILM-FORMING MATERIAL FOR SEMICONDUCTOR, MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, PROCESS MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, UNDERLAYER FILM-FORMING MATERIAL, UNDERLAYER FILM, AND SEMICONDUCTOR DEVICE | ADEKA CORPORATION (JP) | 2024-05-29 | — | — | EP | disclosed |
| WO-2024090369-A1 | COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT | 株式会社ADEKA | 2024-05-02 | — | — | WO | disclosed |
| EP-1096318-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-05-02 | — | — | EP | disclosed |
| EP-1085377-A1 | Resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-03-21 | — | — | EP | disclosed |
| EP-1053985-A1 | Resist compositions and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2000-11-22 | — | — | EP | disclosed |
| US-6147249-A | ESTER COMPOUND CAPABLE OF FORMING ACID-DECOMPOSABLE POLYMER WHICH CAN BE BLENDED AS BASE RESIN TO FORMULATE RESIST COMPOSITION HAVING HIGHER SENSITIVITY, RESOLUTION AND ETCHING RESISTANCE THAN CONVENTIONAL RESIST COMPOSITIONS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-11-14 | — | — | US | disclosed |
| EP-1031879-A1 | Novel ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-08-30 | — | — | EP | disclosed |
| US-6071670-A | PHOTORESIST RESIN COMPRISING PHOTOACID GENERATING COMPOUND AND AN ACID HYDROLYZABLE OLIGOMER HAVING ALICYCLIC OR POLYCONDENSED AROMATIC BACKBONE; ALKALI DEVELOPMENT WITH HIGH RESOLUTION, DRY ETCH RESISTANCE | KABUSHIKI KAISHA TOSHIBA (JP) | 2000-06-06 | — | — | US | disclosed |
| EP-1004568-A2 | Novel ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-05-31 | — | — | EP | disclosed |
| US-6060207-A | LOW IN ABSORPTION OF A LIGHT SOURCE OF SHORT WAVELENGTH AND EXCELLENT IN DRY ETCH RESISTANCE; COMPRISES A COMPOUND HAVING A TERPENOID SKELETON | KABUSHIKI KAISHA TOSHIBA (JP) | 2000-05-09 | — | — | US | disclosed |
| US-5972560-A | A CROSSLINKED POLYSILOXANE PHOTOACID GENERATOR HAVING HIGH TRANSPARENCY, HIGH RESOLUTION, IMPROVED LATITUDE OF EXPOSURE, PROCESS ADAPTABILITY, AND FOR PRECISE MICRO-PROCESSING | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-10-26 | — | — | US | disclosed |
| US-5932391-A | CONTAINING AN ACYCLIC COMPOUND WHICH IS A VINYL POLYMERBEING LIGHT ABSORBENT | KABUSHIKI KAISHA TOSHIBA (JP) | 1999-08-03 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260008932-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | ASH2L, ALKBH2, ITGA1 | GPR3 4109/4885CA1 29/4885CA2 291/4885 |
| US-20260146026-A1 | COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT | CBR3, CBR1, NOTUM | GPR3 3108/4885CA1 467/4885CA2 1035/4885 |
| US-20240352203-A1 | FILM-FORMING MATERIAL FOR SEMICONDUCTOR, MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, PROCESS MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, UNDERLAYER FILM-FORMING MATERIAL, UNDERLAYER FILM, AND SEMICONDUCTOR DEVICE | FBXL19, SRSF9, CNOT9 | GPR3 3425/4885CA1 1621/4885CA2 4096/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.