Tetramethylammonium Ion

Tetramethylammonium Ion

SCHEMBL1130116

C[N+](C)(C)C.O=P(O)(O)F.O=P(O)(O)F.O=P(O)(O)F.O=P(O)(O)F.O=P(O)(O)F.O=P([O-])(O)F

nearest known ligand 0.41

Full drug profile on Sugi Atlas →

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
SLC34A1 Q06495 1/20 0.41
CA2 P00918 1/20 0.35
BBOX1 O75936 1/20 0.31
KDM4E B2RXH2 1/20 0.30
CYP2C19 P33261 1/20 0.30
KMT2A Q03164 1/20 0.30
LMNA P02545 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Tetramethylammonium Ion SCHEMBL6544920 0.91 SLC34A1 (0.35) SLC34A1CA2
Tetramethylammonium Ion SCHEMBL28726648 0.89 CA2 (0.43) SLC34A1CA2BBOX1LMNA
Tetramethylammonium Ion SCHEMBL36639 0.82 SLC34A1 (0.50) SLC34A1CA2BBOX1KDM4ECYP2C19
Tetramethylammonium Ion SCHEMBL11226372 0.82 CHRNB2 (0.33) SLC34A1
Tetramethylammonium Ion SCHEMBL10180356 0.82 CHRNB2 (0.33) SLC34A1
Tetramethylammonium Ion SCHEMBL36640 0.82 SLC34A1 (0.61) SLC34A1CA2BBOX1KDM4ECYP2C19
Tetramethylammonium Ion SCHEMBL27859839 0.82 CA2 (0.43) SLC34A1CA2BBOX1LMNA
Tetramethylammonium Ion SCHEMBL10181373 0.82 CHRNB2 (0.33) SLC34A1
SCHEMBL3628035 0.80 SLC34A1 (0.41) SLC34A1CA2KDM4ECYP2C19KMT2A
Tetramethylammonium Ion SCHEMBL6320658 0.79 SLC34A1 (0.47) SLC34A1CA2BBOX1KDM4ECYP2C19

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 41 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20200303086-A1 ELECTROCONDUCTIVE FILM AND METHOD FOR MANUFACTURING ELECTROCONDUCTIVE PATTERN TOKYO UNIVERSITY OF SCIENCE FOUNDATION (JP) 2020-09-24 US disclosed
US-10720259-B2 Electroconductive film and method for manufacturing electroconductive pattern TOKYO UNIVERSITY OF SCIENCE FOUNDATION (JP) 2020-07-21 US disclosed
US-20170309363-A1 ELECTROCONDUCTIVE FILM AND METHOD FOR MANUFACTURING ELECTROCONDUCTIVE PATTERN TOKYO UNIVERSITY OF SCIENCE FOUNDATION (JP) 2017-10-26 US disclosed
EP-2762976-A1 Use of immersion liquids AIR PRODUCTS AND CHEMICALS, INC. (US) 2014-08-06 EP disclosed
EP-1557721-B1 Use of fluids for immersion lithography and pattern forming method AIR PROD & CHEM (US) 2014-08-06 EP disclosed
US-8007986-B2 Immersion lithography fluids AIR PRODUCTS AND CHEMICALS, INC. (US) 2011-08-30 US disclosed
EP-1323742-B1 Radiation sensitive refractive index changing composition and refractive index changing method JSR CORP (JP) 2011-02-16 EP disclosed
US-7879531-B2 Immersion lithography fluids AIR PRODUCTS AND CHEMICALS, INC. (US) 2011-02-01 US disclosed
EP-2012198-B1 METHOD AND EQUIPMENT FOR PROCESSING OPTICAL RECORDING MEDIUM, AND OPTICAL RECORDER/REPRODUCER FUJIFILM CORP (JP) 2010-11-24 EP disclosed
US-20100061212-A1 METHOD AND DEVICE FOR OPTICAL RECORDING MEDIUM, AND OPTICAL RECORDING AND REPRODUCING APPARATUS FUJIFILM CORPORATION (JP) 2010-03-11 US disclosed
US-20030187119-A1 Radiation-sensitive composition capable of having refractive index distribution JSR CORPORATION (JP) 2003-10-02 US disclosed
US-20030171468-A1 Radiation-sensitive composition changing in refractive index and utilization thereof JSR CORPORATION (JP) 2003-09-11 US disclosed
EP-1331518-A2 Radiation sensitive composition for forming an insulating film, insulating film and display device JSR Corporation (JP) 2003-07-30 EP disclosed
US-20030139486-A1 Radiation sensitive refractive index changing composition and refractive index changing method JSR CORPORATION (JP) 2003-07-24 US disclosed
EP-1323742-A2 Radiation sensitive refractive index changing composition and refractive index changing method JSR Corporation (JP) 2003-07-02 EP disclosed
US-20030064303-A1 Composition having refractive index sensitively changeable by radiation and method for forming refractive index pattern JSR CORPORATION (JP) 2003-04-03 US disclosed
EP-1235104-A1 COMPOSITION HAVING REFRACTIVE INDEX SENSITIVELY CHANGEABLE BY RADIATION AND METHOD FOR FORMING REFRACTIVE INDEX PATTERN JSR Corporation (JP) 2002-08-28 EP disclosed
EP-0880075-B1 Radiation sensitive resin composition JSR CORP (JP) 2001-10-17 EP disclosed
US-5958648-A Radiation sensitive resin composition JSR CORPORATION (JP) 1999-09-28 US disclosed
EP-0880075-A1 Radiation sensitive resin composition JSR Corporation (JP) 1998-11-25 EP disclosed