Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | DNM1 | Q05193 | 2/20 | 0.39 |
| ▸ | MEN1 | O00255 | 4/20 | 0.38 |
| ▸ | KMT2A | Q03164 | 4/20 | 0.38 |
| ▸ | TP53 | P04637 | 2/20 | 0.38 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.38 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.38 |
| ▸ | HTT | P42858 | 2/20 | 0.37 |
| ▸ | UBE2M | P61081 | 3/20 | 0.34 |
| ▸ | DCUN1D1 | Q96GG9 | 3/20 | 0.34 |
| ▸ | MAPT | P10636 | 2/20 | 0.33 |
| ▸ | SIGMAR1 | Q99720 | 2/20 | 0.33 |
| ▸ | TLR8 | Q9NR97 | 1/20 | 0.33 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.33 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.33 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.33 |
| ▸ | TSHR | P16473 | 1/20 | 0.33 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.33 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.33 |
| ▸ | LMNA | P02545 | 2/20 | 0.33 |
| ▸ | HTR2A | P28223 | 2/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29440637 | 1.00 | DNM1 (0.39) | DNM1MEN1KMT2ATP53SMN1; SMN2 | |
| SCHEMBL1130778 | 0.90 | DNM1 (0.41) | DNM1MEN1KMT2ATP53SMN1; SMN2 | |
| SCHEMBL26287035 | 0.85 | TLR8 (0.40) | MEN1KMT2ATP53UBE2MDCUN1D1 | |
| Tetramethylammonium Ion SCHEMBL1130664 | 0.85 | TLR8 (0.40) | MAPK1MAPTSIGMAR1TLR8TSHR | |
| Tetramethylammonium Ion SCHEMBL29470085 | 0.85 | TLR8 (0.40) | MAPK1MAPTSIGMAR1TLR8TSHR | |
| SCHEMBL6715464 | 0.83 | TLR8 (0.42) | MAPK1MAPTSIGMAR1TLR8TSHR | |
| Biphenyl SCHEMBL7785983 | 0.82 | TLR8 (0.41) | TP53MAPTSIGMAR1TLR8CYP1A2 | |
| SCHEMBL1130701 | 0.80 | TLR8 (0.37) | MEN1KMT2ATP53UBE2MDCUN1D1 | |
| Tetrabuthylammonium SCHEMBL1130718 | 0.80 | TLR8 (0.39) | TLR8EPHX1LMNAHTR2AHTR2B | |
| SCHEMBL1130405 | 0.79 | TLR8 (0.37) | UBE2MDCUN1D1TLR8TRPV1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 42 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11450445-B2 | Electroconductive film and method for manufacturing electroconductive pattern | TOKYO UNIVERSITY OF SCIENCE FOUNDATION (JP) | 2022-09-20 | — | — | US | disclosed |
| US-20200303086-A1 | ELECTROCONDUCTIVE FILM AND METHOD FOR MANUFACTURING ELECTROCONDUCTIVE PATTERN | TOKYO UNIVERSITY OF SCIENCE FOUNDATION (JP) | 2020-09-24 | — | — | US | disclosed |
| US-10720259-B2 | Electroconductive film and method for manufacturing electroconductive pattern | TOKYO UNIVERSITY OF SCIENCE FOUNDATION (JP) | 2020-07-21 | — | — | US | disclosed |
| US-20170309363-A1 | ELECTROCONDUCTIVE FILM AND METHOD FOR MANUFACTURING ELECTROCONDUCTIVE PATTERN | TOKYO UNIVERSITY OF SCIENCE FOUNDATION (JP) | 2017-10-26 | — | — | US | disclosed |
| US-8728716-B2 | Resin pattern, method for producing the pattern, method for producing MEMS structure, method for manufacturing semiconductor device, and method for producing plated pattern | FUJIFILM CORPORATION (JP) | 2014-05-20 | — | — | US | disclosed |
| EP-2447773-B1 | Method for producing a pattern, method for producing a MEMS structure, use of a cured film of a photosensitive composition as a sacrificial layer or as a component of a MEMS structure | FUJIFILM CORP (JP) | 2013-07-10 | — | — | EP | disclosed |
| US-20120231396-A1 | RESIN PATTERN, METHOD FOR PRODUCING THE PATTERN, METHOD FOR PRODUCING MEMS STRUCTURE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING PLATED PATTERN | FUJIFILM CORPORATION (JP) | 2012-09-13 | — | — | US | disclosed |
| EP-2498133-A2 | Resin pattern, method for producing the pattern, method for producing MEMS structure, method for manufacturing semiconductor device, and method for producing plated pattern | Fujifilm Corporation (JP) | 2012-09-12 | — | — | EP | disclosed |
| US-20120107563-A1 | PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING PATTERN, MEMS STRUCTURE, METHOD FOR PRODUCING THE STRUCTURE, METHOD FOR DRY ETCHING, METHOD FOR WET ETCHING, MEMS SHUTTER DEVICE, AND IMAGE DISPLAY APPARATUS | FUJIFILM CORPORATION (JP) | 2012-05-03 | — | — | US | disclosed |
| EP-2447773-A1 | Photosensitive resin composition, method for producing pattern, MEMS structure, method for producing the structure, method for dry etching, method for wet etching, MEMS shutter device, and image display apparatus | Fujifilm Corporation (JP) | 2012-05-02 | — | — | EP | disclosed |
| US-20030187119-A1 | Radiation-sensitive composition capable of having refractive index distribution | JSR CORPORATION (JP) | 2003-10-02 | — | — | US | disclosed |
| US-20030171468-A1 | Radiation-sensitive composition changing in refractive index and utilization thereof | JSR CORPORATION (JP) | 2003-09-11 | — | — | US | disclosed |
| EP-1331518-A2 | Radiation sensitive composition for forming an insulating film, insulating film and display device | JSR Corporation (JP) | 2003-07-30 | — | — | EP | disclosed |
| US-20030139486-A1 | Radiation sensitive refractive index changing composition and refractive index changing method | JSR CORPORATION (JP) | 2003-07-24 | — | — | US | disclosed |
| EP-1323742-A2 | Radiation sensitive refractive index changing composition and refractive index changing method | JSR Corporation (JP) | 2003-07-02 | — | — | EP | disclosed |
| US-20030064303-A1 | Composition having refractive index sensitively changeable by radiation and method for forming refractive index pattern | JSR CORPORATION (JP) | 2003-04-03 | — | — | US | disclosed |
| EP-1235104-A1 | COMPOSITION HAVING REFRACTIVE INDEX SENSITIVELY CHANGEABLE BY RADIATION AND METHOD FOR FORMING REFRACTIVE INDEX PATTERN | JSR Corporation (JP) | 2002-08-28 | — | — | EP | disclosed |
| EP-0880075-B1 | Radiation sensitive resin composition | JSR CORP (JP) | 2001-10-17 | — | — | EP | disclosed |
| US-5958648-A | Radiation sensitive resin composition | JSR CORPORATION (JP) | 1999-09-28 | — | — | US | disclosed |
| EP-0880075-A1 | Radiation sensitive resin composition | JSR Corporation (JP) | 1998-11-25 | — | — | EP | disclosed |