SCHEMBL1130503

SCHEMBL1130503

C[N+](C)(Cc1ccccc1)c1ccccc1.Cc1ccc(S(=O)(=O)[O-])cc1

nearest known ligand 0.49

Known targets — ChEMBL curated mechanism

CHRM1CHRM2CHRM3CHRM4CHRM5SLC6A2dacAdacBdacCftsImrcAmrcBmrdA

The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP3A4 P08684 2/20 0.49
LMNA P02545 2/20 0.49
CYP2D6 P10635 1/20 0.49
MAPK1 P28482 1/20 0.49
THPO P40225 1/20 0.49
CA12 O43570 2/20 0.45
CA9 Q16790 2/20 0.45
BCHE P06276 1/20 0.45
ACHE P22303 1/20 0.45
CYP1A2 P05177 1/20 0.45
ATM Q13315 1/20 0.45
L3MBTL1 Q9Y468 1/20 0.45
MCHR1 Q99705 1/20 0.43
ALDH1A1 P00352 2/20 0.42
KDM4E B2RXH2 1/20 0.42
TDP1 Q9NUW8 1/20 0.42
CNR2 P34972 4/20 0.40
KMT2A Q03164 2/20 0.40
MAPT P10636 2/20 0.39
MEN1 O00255 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL331272 0.87 ALDH1A1 (0.57) CYP3A4LMNACYP2D6MAPK1THPO
SCHEMBL28743436 0.87 L3MBTL1 (0.44) CYP3A4LMNACYP2D6MAPK1CA12
SCHEMBL9344118 0.85 LMNA (0.56) CYP3A4LMNACYP2D6MAPK1THPO
SCHEMBL11845994 0.84 LMNA (0.55) CYP3A4LMNACYP2D6MAPK1THPO
SCHEMBL11723030 0.84 CYP3A4 (0.50) CYP3A4LMNACYP2D6MAPK1THPO
SCHEMBL22188507 0.84 KDM4E (0.45) CA9ACHEALDH1A1KDM4ETDP1
Trifluoromethanesulfonic Acid SCHEMBL565376 0.82 GPR3 (0.41) CYP3A4LMNACYP2D6MAPK1THPO
Trifluoromethanesulfonic Acid SCHEMBL565684 0.82 GPR3 (0.41) CYP3A4LMNACYP2D6MAPK1THPO
SCHEMBL11574807 0.82 LMNA (0.67) CYP3A4LMNACYP2D6MAPK1THPO
SCHEMBL564455 0.82 ALDH1A1 (0.50) CYP3A4LMNAMAPK1CA12CA9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 37 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11450445-B2 Electroconductive film and method for manufacturing electroconductive pattern TOKYO UNIVERSITY OF SCIENCE FOUNDATION (JP) 2022-09-20 US disclosed
US-20200303086-A1 ELECTROCONDUCTIVE FILM AND METHOD FOR MANUFACTURING ELECTROCONDUCTIVE PATTERN TOKYO UNIVERSITY OF SCIENCE FOUNDATION (JP) 2020-09-24 US disclosed
US-10720259-B2 Electroconductive film and method for manufacturing electroconductive pattern TOKYO UNIVERSITY OF SCIENCE FOUNDATION (JP) 2020-07-21 US disclosed
US-20170309363-A1 ELECTROCONDUCTIVE FILM AND METHOD FOR MANUFACTURING ELECTROCONDUCTIVE PATTERN TOKYO UNIVERSITY OF SCIENCE FOUNDATION (JP) 2017-10-26 US disclosed
EP-1323742-B1 Radiation sensitive refractive index changing composition and refractive index changing method JSR CORP (JP) 2011-02-16 EP disclosed
EP-2012198-B1 METHOD AND EQUIPMENT FOR PROCESSING OPTICAL RECORDING MEDIUM, AND OPTICAL RECORDER/REPRODUCER FUJIFILM CORP (JP) 2010-11-24 EP disclosed
US-20100061212-A1 METHOD AND DEVICE FOR OPTICAL RECORDING MEDIUM, AND OPTICAL RECORDING AND REPRODUCING APPARATUS FUJIFILM CORPORATION (JP) 2010-03-11 US disclosed
EP-2012198-A1 METHOD AND EQUIPMENT FOR PROCESSING OPTICAL RECORDING MEDIUM, AND OPTICAL RECORDER/REPRODUCER Fujifilm Corporation (JP) 2009-01-07 EP disclosed
US-7320854-B2 Mixture of oxide particles, polymerizable compound,radiation sensitive decomposer and releasing agent JSR CORPORATION (JP) 2008-01-22 US disclosed
US-7205085-B2 Composition having permitivity being radiation-sensitively changeable and method for forming permitivity pattern JSR CORPORATION (JP) 2007-04-17 US disclosed
US-20030171468-A1 Radiation-sensitive composition changing in refractive index and utilization thereof JSR CORPORATION (JP) 2003-09-11 US disclosed
EP-1331518-A2 Radiation sensitive composition for forming an insulating film, insulating film and display device JSR Corporation (JP) 2003-07-30 EP disclosed
US-20030139486-A1 Radiation sensitive refractive index changing composition and refractive index changing method JSR CORPORATION (JP) 2003-07-24 US disclosed
EP-1323742-A2 Radiation sensitive refractive index changing composition and refractive index changing method JSR Corporation (JP) 2003-07-02 EP disclosed
US-20030064303-A1 Composition having refractive index sensitively changeable by radiation and method for forming refractive index pattern JSR CORPORATION (JP) 2003-04-03 US disclosed
EP-1235104-A1 COMPOSITION HAVING REFRACTIVE INDEX SENSITIVELY CHANGEABLE BY RADIATION AND METHOD FOR FORMING REFRACTIVE INDEX PATTERN JSR Corporation (JP) 2002-08-28 EP disclosed
EP-0880075-B1 Radiation sensitive resin composition JSR CORP (JP) 2001-10-17 EP disclosed
US-5958648-A Radiation sensitive resin composition JSR CORPORATION (JP) 1999-09-28 US disclosed
EP-0880075-A1 Radiation sensitive resin composition JSR Corporation (JP) 1998-11-25 EP disclosed
US-5349067-A Method for the synthesis of quaternary ammonium salts NIPPON PAINT CO., LTD. (JP) 1994-09-20 US disclosed