Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PPARG | P37231 | 4/20 | 0.39 |
| ▸ | PPARA | Q07869 | 4/20 | 0.39 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.39 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.39 |
| ▸ | PPARD | Q03181 | 1/20 | 0.39 |
| ▸ | SCN9A | Q15858 | 3/20 | 0.34 |
| ▸ | KIF11 | P52732 | 1/20 | 0.34 |
| ▸ | FFAR4 | Q5NUL3 | 3/20 | 0.33 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.33 |
| ▸ | SCN10A | Q9Y5Y9 | 1/20 | 0.33 |
| ▸ | FFAR1 | O14842 | 1/20 | 0.33 |
| ▸ | HDAC4 | P56524 | 1/20 | 0.33 |
| ▸ | HDAC2 | Q92769 | 1/20 | 0.33 |
| ▸ | HDAC8 | Q9BY41 | 1/20 | 0.33 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.32 |
| ▸ | TRPV1 | Q8NER1 | 1/20 | 0.32 |
| ▸ | STAT3 | P40763 | 1/20 | 0.32 |
| ▸ | PTGS2 | P35354 | 1/20 | 0.32 |
| ▸ | DAGLA | Q9Y4D2 | 1/20 | 0.31 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Trifluoromethanesulfonic Acid SCHEMBL216502 | 1.00 | PPARG (0.39) | PPARGPPARACYP2C9CYP2C19PPARD | |
| Sulfuric Acid SCHEMBL15345263 | 0.89 | PPARG (0.39) | PPARGPPARACYP2C9CYP2C19PPARD | |
| SCHEMBL5707388 | 0.88 | PPARA (0.41) | PPARGPPARACYP2C9CYP2C19PPARD | |
| Trifluoromethanesulfonic Acid SCHEMBL387254 | 0.86 | HDAC4 (0.47) | HDAC4HDAC2HDAC8PTPN1STAT3 | |
| SCHEMBL248258 | 0.85 | PPARG (0.41) | PPARGPPARACYP2C9CYP2C19PPARD | |
| SCHEMBL218886 | 0.82 | ALDH1A1 (0.39) | PPARGPPARACYP2C9CYP2C19PPARD | |
| SCHEMBL1140939 | 0.82 | ALDH1A1 (0.39) | PPARGPPARACYP2C9CYP2C19PPARD | |
| Trifluoromethanesulfonic Acid SCHEMBL1270052 | 0.82 | HSD11B1 (0.40) | HSD11B1PTPN1ALDH1A1 | |
| Trifluoromethanesulfonic Acid SCHEMBL8737223 | 0.81 | POLB (0.40) | CYP2C9CYP2C19PTPN1PTGS2ALDH1A1 | |
| Trifluoromethanesulfonic Acid SCHEMBL8736386 | 0.81 | FFAR4 (0.45) | FFAR4HDAC4HDAC2HDAC8ALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 32 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3382453-B1 | RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM | SHINETSU CHEMICAL CO (JP) | 2023-09-20 | — | — | EP | disclosed |
| EP-3382453-A1 | RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM | Shin-Etsu Chemical Co., Ltd. (JP) | 2018-10-03 | — | — | EP | disclosed |
| EP-3042241-B1 | METHOD OF FORMING CONDUCTIVE FILMS WITH MICRO-WIRES | EASTMAN KODAK CO (US) | 2018-07-25 | — | — | EP | disclosed |
| EP-3077871-B1 | PREPARATION OF ARTICLES WITH CONDUCTIVE MICRO-WIRE PATTERN | EASTMAN KODAK CO (US) | 2018-03-07 | — | — | EP | disclosed |
| US-9591752-B2 | Articles with conductive micro-wire pattern | EASTMAN KODAK COMPANY (US) | 2017-03-07 | — | — | US | disclosed |
| US-20150366057-A1 | ARTICLES WITH CONDUCTIVE MICRO-WIRE PATTERN | KODAK REALTY INC. | 2015-12-17 | — | — | US | disclosed |
| US-9155201-B2 | Preparation of articles with conductive micro-wire pattern | EASTMAN KODAK COMPANY (US) | 2015-10-06 | — | — | US | disclosed |
| US-9099227-B2 | Method of forming conductive films with micro-wires | EASTMAN KODAK COMPANY (US) | 2015-08-04 | — | — | US | disclosed |
| US-20150156886-A1 | PREPARATION OF ARTICLES WITH CONDUCTIVE MICRO-WIRE PATTERN | BANK OF AMERICA, N.A., AS AGENT | 2015-06-04 | — | — | US | disclosed |
| US-20150060113-A1 | PHOTOCURABLE COMPOSITION, ARTICLE, AND METHOD OF USE | EASTMAN KODAK COMPANY | 2015-03-05 | — | — | US | disclosed |
| US-6749988-B2 | PREVENTING A RESIST FILM FROM THINNING AND ALSO FOR ENHANCING THE RESOLUTION AND FOCUS MARGIN OF RESIST; HETEROCYCLIC AMINE COMPOUNDS HAVING A HYDRATING GROUP SUCH AS A HYDROXY, ETHER, ESTER, CARBONYL, CARBONATE GROUP OR LACTONE RING | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-06-15 | — | — | US | disclosed |
| US-6673518-B2 | PHENOL-FORMALDEHYDE RESIN AND ACID GENERATOR | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-01-06 | — | — | US | disclosed |
| US-20030082479-A1 | Polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-05-01 | — | — | US | disclosed |
| US-20030054289-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-03-20 | — | — | US | disclosed |
| US-6515150-B2 | Photoresist resin; exposure to high energy radiation; development | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-02-04 | — | — | US | disclosed |
| US-20020168581-A1 | Silicon-containing polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-11-14 | — | — | US | disclosed |
| US-20020147290-A1 | Cyclic acetal compound, polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-10-10 | — | — | US | disclosed |
| US-20020115018-A1 | Amine compounds, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-22 | — | — | US | disclosed |
| US-20020102493-A1 | Polymer, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-01 | — | — | US | disclosed |
| US-6156481-A | WITH HYDROXYSTYRENE-(METH)ACRYLIC ACID OR (METH)ACRYLATE COPOLYMER WHERE SOME PHENOLIC HYDROXYL GROUPS ARE CROSSLINKED WITH ETHER CONTAINING ACID LABILE GROUPS; DISSOLUTION INHIBITION AND INCREASED DISSOLUTION CONTRAST AFTER EXPOSURE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-12-05 | — | — | US | disclosed |