Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PPARG | P37231 | 4/20 | 0.39 |
| ▸ | PPARA | Q07869 | 4/20 | 0.39 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.39 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.39 |
| ▸ | PPARD | Q03181 | 1/20 | 0.39 |
| ▸ | SCN9A | Q15858 | 3/20 | 0.34 |
| ▸ | KIF11 | P52732 | 1/20 | 0.34 |
| ▸ | FFAR4 | Q5NUL3 | 3/20 | 0.33 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.33 |
| ▸ | SCN10A | Q9Y5Y9 | 1/20 | 0.33 |
| ▸ | FFAR1 | O14842 | 1/20 | 0.33 |
| ▸ | HDAC4 | P56524 | 1/20 | 0.33 |
| ▸ | HDAC2 | Q92769 | 1/20 | 0.33 |
| ▸ | HDAC8 | Q9BY41 | 1/20 | 0.33 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.32 |
| ▸ | TRPV1 | Q8NER1 | 1/20 | 0.32 |
| ▸ | STAT3 | P40763 | 1/20 | 0.32 |
| ▸ | PTGS2 | P35354 | 1/20 | 0.32 |
| ▸ | DAGLA | Q9Y4D2 | 1/20 | 0.31 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Trifluoromethanesulfonic Acid SCHEMBL1140970 | 1.00 | PPARG (0.39) | PPARGPPARACYP2C9CYP2C19PPARD | |
| Sulfuric Acid SCHEMBL15345263 | 0.89 | PPARG (0.39) | PPARGPPARACYP2C9CYP2C19PPARD | |
| SCHEMBL5707388 | 0.88 | PPARA (0.41) | PPARGPPARACYP2C9CYP2C19PPARD | |
| Trifluoromethanesulfonic Acid SCHEMBL387254 | 0.86 | HDAC4 (0.47) | HDAC4HDAC2HDAC8PTPN1STAT3 | |
| SCHEMBL248258 | 0.85 | PPARG (0.41) | PPARGPPARACYP2C9CYP2C19PPARD | |
| SCHEMBL218886 | 0.82 | ALDH1A1 (0.39) | PPARGPPARACYP2C9CYP2C19PPARD | |
| SCHEMBL1140939 | 0.82 | ALDH1A1 (0.39) | PPARGPPARACYP2C9CYP2C19PPARD | |
| Trifluoromethanesulfonic Acid SCHEMBL1270052 | 0.82 | HSD11B1 (0.40) | HSD11B1PTPN1ALDH1A1 | |
| Trifluoromethanesulfonic Acid SCHEMBL8737223 | 0.81 | POLB (0.40) | CYP2C9CYP2C19PTPN1PTGS2ALDH1A1 | |
| Trifluoromethanesulfonic Acid SCHEMBL8736386 | 0.81 | FFAR4 (0.45) | FFAR4HDAC4HDAC2HDAC8ALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8288072-B2 | Antireflection film; fast etching speed whcih reduces deformation; accuracy; 2,3-epoxypropyl methacrylate ester-styrene copolymer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-10-16 | — | — | US | disclosed |
| US-8088554-B2 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2012-01-03 | — | — | US | disclosed |
| US-7745104-B2 | Polymer having a hydrocarbon chain backbone and containing units derived from norbornadiene, indene, benzofuran, benzothiophene, acenaphthene, or vinyl pyrene, fluorene, phenanthrene, chrysene, naphthacene, pentacene, or acenaphthene; excellent etching resistance; shorter wavelengths | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-29 | — | — | US | disclosed |
| US-20100151382-A1 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-17 | — | — | US | disclosed |
| US-7655378-B2 | Negative resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-02-02 | — | — | US | disclosed |
| US-7638268-B2 | Rework process for photoresist film | SHIN-ESTU CHEMICAL CO., LTD. (JP) | 2009-12-29 | — | — | US | disclosed |
| US-7585613-B2 | comprising light absorbing silicone resin, acid generator generates acid upon exposure to radiation; photoresist pattern cover the antireflection film with a vertical wall profile, without intermixing, less damage to an underlying layer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-09-08 | — | — | US | disclosed |
| US-20080227037-A1 | Resist lower layer film composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-09-18 | — | — | US | disclosed |
| US-20080038662-A1 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-02-14 | — | — | US | disclosed |
| US-20080020290-A1 | Negative resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-24 | — | — | US | disclosed |
| US-20080020289-A1 | Novel polymer, positive resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-24 | — | — | US | disclosed |
| US-20070172759-A1 | Antireflection film composition, substrate, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-07-26 | — | — | US | disclosed |
| US-20070134916-A1 | Antireflection film composition, patterning process and substrate using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-06-14 | — | — | US | disclosed |
| US-20070117411-A1 | Rework process for photoresist film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-24 | — | — | US | disclosed |
| US-20060234158-A1 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-10-19 | — | — | US | disclosed |