SCHEMBL1140939

SCHEMBL1140939

CC(C)(C)Oc1ccc(-c2ccccc2I)cc1.Cc1ccc(S(=O)(=O)O)cc1

nearest known ligand 0.39

Known targets — ChEMBL curated mechanism

ABL1BMXBRAFBTKCHRNA4CHRNB2CSNK1EEGFRERBB2F10FLT1FLT3FLT4IGF1RINSRITKJAK3KDRKITOPRM1PARP1PARP2PDGFRBPIK3CDRAF1RETSLC18A2TECTXKdacAdacBdacCftsImrcAmrcBmrdArplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO

The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.39
MAPT P10636 3/20 0.39
LMNA P02545 3/20 0.39
HTT P42858 2/20 0.39
SMN1; SMN2 Q16637 2/20 0.39
KDM4E B2RXH2 2/20 0.39
TDP1 Q9NUW8 2/20 0.39
L3MBTL1 Q9Y468 2/20 0.39
CYP2D6 P10635 3/20 0.36
CYP2C9 P11712 3/20 0.36
MEN1 O00255 1/20 0.36
CYP1A2 P05177 1/20 0.36
CYP3A4 P08684 1/20 0.36
HPGD P15428 1/20 0.36
CASP1 P29466 1/20 0.36
KMT2A Q03164 1/20 0.36
CA12 O43570 2/20 0.36
CA2 P00918 2/20 0.36
CA9 Q16790 2/20 0.36
MCOLN3 Q8TDD5 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL218886 1.00 ALDH1A1 (0.39) ALDH1A1MAPTLMNAHTTSMN1; SMN2
SCHEMBL10492054 0.87 LMNA (0.48) ALDH1A1MAPTLMNAHTTSMN1; SMN2
SCHEMBL7741645 0.86 PPARG (0.36) SMN1; SMN2CYP2D6CYP2C9MEN1KMT2A
SCHEMBL7738086 0.86 CA12 (0.39) CYP2C9CA12CA2CA9PPARG
SCHEMBL760070 0.86 MEN1 (0.44) ALDH1A1MAPTLMNAHTTSMN1; SMN2
SCHEMBL5707388 0.83 PPARA (0.41) ALDH1A1MAPTLMNAHTTSMN1; SMN2
Sulfuric Acid SCHEMBL15345263 0.82 PPARG (0.39) CYP2C9PPARGPPARACYP2C19PPARD
Trifluoromethanesulfonic Acid SCHEMBL1140970 0.82 PPARG (0.39) ALDH1A1CYP2C9PPARGPPARACYP2C19
Trifluoromethanesulfonic Acid SCHEMBL216502 0.82 PPARG (0.39) ALDH1A1CYP2C9PPARGPPARACYP2C19
SCHEMBL2870275 0.82 SNCA (0.40) ALDH1A1MAPTLMNAHTTSMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-114379233-B Nozzle plate, fluid ejection head, and method of manufacturing fluid ejection head 船井电机株式会社 2023-07-07 CN disclosed
EP-2479198-B1 AROMATIC HYDROCARBON RESIN AND COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY MITSUBISHI GAS CHEMICAL CO (JP) 2016-02-17 EP disclosed
US-8586289-B2 Aromatic hydrocarbon resin and composition for forming underlayer film for lithography MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2013-11-19 US disclosed
EP-2479198-A1 AROMATIC HYDROCARBON RESIN AND COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY Mitsubishi Gas Chemical Company, Inc. (JP) 2012-07-25 EP disclosed
US-20120171611-A1 AROMATIC HYDROCARBON RESIN AND COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2012-07-05 US disclosed
US-7923195-B2 Positive resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-04-12 US disclosed
US-7887991-B2 Positive resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-02-15 US disclosed
US-7629106-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-12-08 US disclosed
US-20090202940-A1 Positive resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-13 US disclosed
US-20090202947-A1 Positive resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO.,LTD (JP) 2009-08-13 US disclosed
US-6509135-B2 Polymers having fused rings with polar and acid labile groups tetracyclo(4.4.0.1(2,5).1(7,10))dodec-3-ene-8-carboxylic acid, tert-butyl ester for example; resists with improved etch resistance, resolution and sensitivity SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-01-21 US disclosed
US-20030013832-A1 Novel styrene polymer, chemically amplified positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-01-16 US disclosed
US-6413695-B1 ENANTIOMORPHS; EXPOSURE, DEVELOPMENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-07-02 US disclosed
US-20020051935-A1 Resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD (JP) 2002-05-02 US disclosed
US-20020004178-A1 Novel ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-01-10 US disclosed
US-20020004569-A1 Polymer, chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-01-10 US disclosed
US-20010038969-A1 Novel polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. OF (JP) 2001-11-08 US disclosed
US-20010033989-A1 Novel polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-10-25 US disclosed
US-20010031424-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. OF (JP) 2001-10-18 US disclosed
US-20010026904-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-10-04 US disclosed