SCHEMBL114493

SCHEMBL114493

CCCS(=O)(=O)C(CC)S(=O)(=O)C=[N+]=[N-]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL927904 0.77 NPC1 (0.32)
SCHEMBL928946 0.76 CA2 (0.38)
SCHEMBL5666637 0.75 NPC1 (0.30)
SCHEMBL13836864 0.70
SCHEMBL27820865 0.69
SCHEMBL31190020 0.67 CA2 (0.41)
SCHEMBL2023253 0.67 FAAH (0.30)
SCHEMBL4828508 0.64
SCHEMBL6761679 0.62
SCHEMBL16829660 0.61 ALDH1A1 (0.52)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 114 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4664197-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-17 EP disclosed
EP-3263626-B1 SILICONE SKELETON-CONTAINING POLYMER, PHOTO-CURABLE RESIN COMPOSITION, PHOTO-CURABLE DRY FILM, LAMINATE, AND PATTERNING PROCESS SHINETSU CHEMICAL CO (JP) 2024-03-13 EP disclosed
EP-3382453-B1 RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM SHINETSU CHEMICAL CO (JP) 2023-09-20 EP disclosed
US-20210165327-A1 FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR FILM FORMATION FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND METHOD FOR FORMING PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-06-03 US disclosed
US-20210055651-A1 OPTICAL COMPONENT FORMING COMPOSITION AND CURED PRODUCT THEREOF MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-02-25 US disclosed
EP-3235803-B1 TETRACARBOXYLIC ACID DIESTER COMPOUND, POLYIMIDE PRECURSOR POLYMER AND METHOD FOR PRODUCING THE SAME, NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING CURED FILM SHINETSU CHEMICAL CO (JP) 2020-06-03 EP disclosed
US-10457779-B2 Tetracarboxylic acid diester compound, polyimide precursor polymer and method for producing the same, negative photosensitive resin composition, positive photosensitive resin composition, patterning process, and method for forming cured film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-10-29 US disclosed
US-10451970-B2 Silicone skeleton-containing polymer, photo-curable resin composition, photo-curable dry film, laminate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-10-22 US disclosed
US-10416563-B2 Resist underlayer film composition, patterning process, and method for forming resist underlayer film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-09-17 US disclosed
EP-3103831-B1 PHOTO-CURABLE RESIN COMPOSITION AND PHOTO-CURABLE DRY FILM USING THE SAME SHINETSU CHEMICAL CO (JP) 2019-09-04 EP disclosed
US-6566037-B2 A polymer with monomers of a robust alicyclic structure having both polar and acid labile groups; resist composition of improved reactivity, substrate adhesion and etching resistance SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-05-20 US disclosed
US-20030088115-A1 Novel ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2003-05-08 US disclosed
US-20020147290-A1 Cyclic acetal compound, polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-10-10 US disclosed
US-20020004178-A1 Novel ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-01-10 US disclosed
US-20010026904-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-10-04 US disclosed
US-20010010890-A1 Polymers, chemical amplification resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-08-02 US disclosed
US-6180313-B1 SUITABLE AS RADIATION-SENSITIVE ACID-GENERATING AGENT; PHOTORESISTS FOR USE IN PHOTOLITHOGRAPHY TOKYO OHKA KOGYO CO., LTD. (JP) 2001-01-30 US disclosed
US-6171749-B1 COMPRISING ALKALI-SOLUBLE RESIN, RADIATION-SENSITIVE ACID GENERATING AGENT AND CROSS-LINKING AGENT; CHARACTERISTICALLY, THE ACID GENERATING AGENT IS A COMBINATION OF A HALOGENOACID GENERATING COMPOUND AND A BIS(ALKYLSULFONYL) DIAZOMETHANE TOKYO OHKA KOGYO CO., LTD. (JP) 2001-01-09 US disclosed
US-6156481-A WITH HYDROXYSTYRENE-(METH)ACRYLIC ACID OR (METH)ACRYLATE COPOLYMER WHERE SOME PHENOLIC HYDROXYL GROUPS ARE CROSSLINKED WITH ETHER CONTAINING ACID LABILE GROUPS; DISSOLUTION INHIBITION AND INCREASED DISSOLUTION CONTRAST AFTER EXPOSURE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-12-05 US disclosed
US-6153733-A (Disulfonyl diazomethane compounds) TOKYO OHKA KOGYO CO., LTD. (JP) 2000-11-28 US disclosed