Predicted protein targets (top 17)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.39 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.39 |
| ▸ | USP2 | O75604 | 1/20 | 0.39 |
| ▸ | LMNA | P02545 | 2/20 | 0.33 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.33 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.33 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.33 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.33 |
| ▸ | CHRM4 | P08173 | 1/20 | 0.33 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.33 |
| ▸ | CHRM3 | P20309 | 1/20 | 0.33 |
| ▸ | PTGS2 | P35354 | 1/20 | 0.33 |
| ▸ | HRH1 | P35367 | 1/20 | 0.33 |
| ▸ | KCNH2 | Q12809 | 1/20 | 0.33 |
| ▸ | HRH3 | Q9Y5N1 | 1/20 | 0.33 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.32 |
| ▸ | GAA | P10253 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5892487 | 0.85 | USP2 (0.36) | ALDH1A1TDP1USP2LMNACYP3A4 | |
| SCHEMBL13532353 | 0.79 | ALDH1A1 (0.35) | ALDH1A1TDP1USP2LMNAKDM4E | |
| SCHEMBL18714194 | 0.79 | ALDH1A1 (0.35) | ALDH1A1TDP1USP2LMNACYP3A4 | |
| SCHEMBL13324798 | 0.79 | ALDH1A1 (0.35) | ALDH1A1TDP1USP2LMNACYP3A4 | |
| SCHEMBL75227 | 0.79 | ALDH1A1 (0.35) | ALDH1A1TDP1USP2LMNACYP3A4 | |
| SCHEMBL5892503 | 0.79 | USP2 (0.35) | ALDH1A1TDP1USP2 | |
| SCHEMBL3880292 | 0.79 | LMNA (0.36) | ALDH1A1TDP1USP2LMNACYP3A4 | |
| SCHEMBL13259999 | 0.79 | ALDH1A1 (0.36) | ALDH1A1TDP1USP2LMNAKDM4E | |
| SCHEMBL122649 | 0.79 | ALDH1A1 (0.43) | ALDH1A1TDP1USP2LMNACYP3A4 | |
| SCHEMBL18713297 | 0.79 | ALDH1A1 (0.43) | ALDH1A1TDP1USP2LMNACYP3A4 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 265 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11914291-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-02-27 | — | — | US | disclosed |
| US-11914294-B2 | Positive resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-02-27 | — | — | US | disclosed |
| US-20240027903-A1 | Resist Material And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-01-25 | — | — | US | disclosed |
| US-20240027909-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-01-25 | — | — | US | disclosed |
| US-20240027902-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-01-25 | — | — | US | disclosed |
| US-11860540-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-01-02 | — | — | US | disclosed |
| US-11835860-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-12-05 | — | — | US | disclosed |
| US-11835859-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-12-05 | — | — | US | disclosed |
| US-20230384677-A1 | ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-30 | — | — | US | disclosed |
| US-11829067-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-28 | — | — | US | disclosed |
| US-20040241580-A1 | Radiation-sensitive resin composition | NISHIMURA YUKIO (JP) | 2004-12-02 | — | — | US | disclosed |
| US-6800414-B2 | FLUOROPOLYMER | JSR CORPORATION (JP) | 2004-10-05 | — | — | US | disclosed |
| US-6623907-B2 | Chemical amplified photoresist | JSR CORPORATION (JP) | 2003-09-23 | — | — | US | disclosed |
| EP-1331216-A1 | MONOMERS HAVING ELECTRON-WITHDRAWING GROUPS AND PROCESSES FOR PREPARING THE SAME | Daicel Chemical Industries, Ltd. (JP) | 2003-07-30 | — | — | EP | disclosed |
| US-20020058201-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2002-05-16 | — | — | US | disclosed |
| EP-1193558-A2 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2002-04-03 | — | — | EP | disclosed |
| US-20020009668-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2002-01-24 | — | — | US | disclosed |
| EP-1164434-A2 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2001-12-19 | — | — | EP | disclosed |
| US-20010023050-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2001-09-20 | — | — | US | disclosed |
| EP-1122605-A2 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2001-08-08 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20230384677-A1 | ONIUM SALT COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | INSR, INSRR, SLC6A5 | ALDH1A1 4867/4885TDP1 4275/4885USP2 4016/4885 |
| US-20240027903-A1 | Resist Material And Patterning Process | LBR, HNRNPU, EWSR1 | ALDH1A1 4741/4885TDP1 3213/4885USP2 2463/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.