SCHEMBL1229323

SCHEMBL1229323

OC(c1c[c]cc(C(O)(C(F)(F)F)C(F)(F)F)c1)(C(F)(F)F)C(F)(F)F

nearest known ligand 0.43

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
AR P10275 2/20 0.41
NR1H2 P55055 12/20 0.40
NR1H3 Q13133 12/20 0.40
MEN1 O00255 1/20 0.37
ALOX15 P16050 1/20 0.37
TSHR P16473 1/20 0.37
MAPK1 P28482 1/20 0.37
KMT2A Q03164 1/20 0.37
HSD17B10 Q99714 1/20 0.37
MLYCD O95822 1/20 0.35
SMN1; SMN2 Q16637 2/20 0.34
RORA P35398 1/20 0.33
RORC P51449 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8586265 0.81 NR1H2 (0.48) ARNR1H2NR1H3MEN1ALOX15
SCHEMBL127323 0.75 NR1H2 (0.43) ARNR1H2NR1H3MEN1ALOX15
SCHEMBL11884233 0.74 CES2 (0.48) ARNR1H2NR1H3MEN1ALOX15
SCHEMBL5951815 0.74
Water SCHEMBL1684070 0.73 NR1H2 (0.65) ARNR1H2NR1H3MLYCDSMN1; SMN2
SCHEMBL102848 0.73 CES2 (0.40) TSHRMAPK1
SCHEMBL10212933 0.72 GABRA1 (0.46) ARNR1H2NR1H3MEN1ALOX15
SCHEMBL832913 0.72 NR1H3 (0.47) ARNR1H2NR1H3MEN1ALOX15
SCHEMBL23174652 0.70 CES2 (0.39) TSHRMAPK1
SCHEMBL29121446 0.70 CES2 (0.39) TSHRMAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8658346-B2 Pattern forming process, chemically amplified positive resist composition, and resist-modifying composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-02-25 US disclosed
US-8329384-B2 Resist-modifying composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-12-11 US disclosed
US-20110033799-A1 PATTERN FORMING PROCESS, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND RESIST-MODIFYING COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-02-10 US disclosed
US-20100297563-A1 RESIST-MODIFYING COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-11-25 US disclosed