SCHEMBL12294078

SCHEMBL12294078

CC(C)c1cc(C(C)C)c(S(=O)(=O)ON2C(=O)C3C4C=CC(C4)C3C2=O)c(C(C)C)c1

nearest known ligand 0.40

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
▸ FABP4 P15090 2/20 0.40
▸ FABP3 P05413 1/20 0.40
▸ FABP5 Q01469 1/20 0.40
▸ MEN1 O00255 2/20 0.37
▸ KMT2A Q03164 2/20 0.37
▸ SMN1; SMN2 Q16637 2/20 0.37
▸ ALDH1A1 P00352 3/20 0.36
▸ TDP1 Q9NUW8 1/20 0.36
▸ CYP3A4 P08684 2/20 0.35
▸ TSHR P16473 2/20 0.35
▸ CYP2C19 P33261 2/20 0.35
▸ NPSR1 Q6W5P4 1/20 0.34
▸ GAA P10253 1/20 0.33
▸ POLB P06746 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2958503 0.77 FABP4 (0.47) FABP4FABP3FABP5ALDH1A1TDP1
SCHEMBL2734945 0.76 CYP3A4 (0.43) MEN1KMT2ASMN1; SMN2ALDH1A1TDP1
SCHEMBL7737489 0.76 FABP4 (0.49) FABP4FABP3FABP5ALDH1A1TDP1
SCHEMBL19861151 0.74 ALDH1A1 (0.42) MEN1KMT2ASMN1; SMN2ALDH1A1TDP1
SCHEMBL547495 0.74 ALDH1A1 (0.42) MEN1KMT2ASMN1; SMN2ALDH1A1TDP1
SCHEMBL5555737 0.74 FABP4 (0.47) FABP4FABP3FABP5MEN1KMT2A
SCHEMBL14252042 0.74 ALDH1A1 (0.39) MEN1KMT2ASMN1; SMN2ALDH1A1TDP1
SCHEMBL547766 0.72 ALDH1A1 (0.53) MEN1KMT2ASMN1; SMN2ALDH1A1TDP1
SCHEMBL5552400 0.71 KDM4E (0.58) FABP4FABP3FABP5MEN1KMT2A
SCHEMBL14252044 0.71 KMT2A (0.41) MEN1KMT2ASMN1; SMN2ALDH1A1TDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9086623-B2 Method of forming pattern, actinic-ray- or radiation-sensitive resin composition and actinic-ray- or radiation-sensitive film FUJIFILM CORPORATION (JP) 2015-07-21 — — US disclosed
US-9086623-B2 Method of forming pattern, actinic-ray- or radiation-sensitive resin composition and actinic-ray- or radiation-sensitive film FUJIFILM CORPORATION (JP) 2015-07-21 — — US disclosed
US-8753802-B2 Pattern forming method, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2014-06-17 — — US disclosed
US-8753802-B2 Pattern forming method, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2014-06-17 — — US disclosed
US-20130049149-A1 METHOD OF FORMING PATTERN, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND ACTINIC-RAY- OR RADIATION-SENSITIVE FILM FUJIFILM CORPORATION (JP) 2013-02-28 — — US disclosed
US-20130049149-A1 METHOD OF FORMING PATTERN, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND ACTINIC-RAY- OR RADIATION-SENSITIVE FILM FUJIFILM CORPORATION (JP) 2013-02-28 — — US disclosed
US-20130045365-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2013-02-21 — — US disclosed
US-20130045365-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2013-02-21 — — US disclosed
WO-2011132764-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2011-10-27 — — WO disclosed
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