SCHEMBL2958503

SCHEMBL2958503

CC(C)c1cc(C(C)C)c(S(=O)(=O)ON2C(=O)CCC2=O)c(C(C)C)c1

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ FABP4 P15090 6/20 0.47
▸ FABP3 P05413 2/20 0.47
▸ FABP5 Q01469 1/20 0.47
▸ PARL Q9H300 2/20 0.45
▸ ALDH1A1 P00352 1/20 0.42
▸ ENPP3 O14638 2/20 0.36
▸ ENPP1 P22413 2/20 0.36
▸ EPHX2 P34913 1/20 0.34
▸ GAA P10253 1/20 0.34
▸ PIK3CD O00329 1/20 0.34
▸ PIK3CA P42336 1/20 0.34
▸ PIK3CB P42338 1/20 0.34
▸ PIK3CG P48736 1/20 0.34
▸ KDM4E B2RXH2 1/20 0.33
▸ CYP1A2 P05177 1/20 0.33
▸ CYP3A4 P08684 1/20 0.33
▸ MAPT P10636 1/20 0.33
▸ HPGD P15428 1/20 0.33
▸ XBP1 P17861 1/20 0.33
▸ CYP2C19 P33261 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7737489 0.83 FABP4 (0.49) FABP4FABP3FABP5ALDH1A1ENPP3
SCHEMBL5555737 0.82 FABP4 (0.47) FABP4FABP3FABP5ALDH1A1ENPP3
SCHEMBL6387869 0.79 PARL (0.47) FABP4FABP3FABP5PARLALDH1A1
SCHEMBL5552400 0.78 KDM4E (0.58) FABP4FABP3FABP5ALDH1A1ENPP3
SCHEMBL12294078 0.77 FABP4 (0.40) FABP4FABP3FABP5ALDH1A1GAA
SCHEMBL2946584 0.75 FABP4 (0.62) FABP4FABP3FABP5ALDH1A1ENPP3
SCHEMBL6744172 0.73 KDM4E (0.55) FABP4FABP3FABP5ALDH1A1ENPP3
SCHEMBL14949312 0.73 FABP4 (0.60) FABP4FABP3FABP5ALDH1A1ENPP3
SCHEMBL24928405 0.72 FABP4 (0.58) FABP4FABP3FABP5ALDH1A1ENPP3
SCHEMBL17131628 0.72 FABP4 (0.58) FABP4FABP3FABP5ALDH1A1ENPP3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6569596-B1 Photoresists comprising N-(ethylsulfonyloxy)succinimide, novolaks, curing agents and an acid generators such as alpha -(hexylsulfonyloxyimino)-4-methoxybenzyl cyanide; integrated circuits; semiconductors SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2003-05-27 — — US claimed
US-7759045-B2 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-07-20 — — US disclosed
US-20090004601-A1 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-01-01 — — US disclosed
CN-101334588-A Chemically amplified positive resist composition SUMITOMO CHEMICAL CO (JP) 2008-12-31 — — CN disclosed
US-6569596-B1 Photoresists comprising N-(ethylsulfonyloxy)succinimide, novolaks, curing agents and an acid generators such as alpha -(hexylsulfonyloxyimino)-4-methoxybenzyl cyanide; integrated circuits; semiconductors SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2003-05-27 — — US disclosed
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