SCHEMBL13027122

SCHEMBL13027122

COc1c(CO)ccc(C)c1[Si](OC)(OC)OC

nearest known ligand 0.36

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
▸ PDCD1 Q15116 1/20 0.36
▸ CD274 Q9NZQ7 1/20 0.36
▸ MAPT P10636 2/20 0.35
▸ PDE4A P27815 1/20 0.32
▸ PDE4B Q07343 1/20 0.32
▸ PDE4C Q08493 1/20 0.32
▸ PDE4D Q08499 1/20 0.32
▸ ALDH1A1 P00352 4/20 0.31
▸ LMNA P02545 1/20 0.31
▸ SMN1; SMN2 Q16637 2/20 0.31
▸ GAA P10253 1/20 0.31
▸ TDP1 Q9NUW8 1/20 0.31
▸ L3MBTL1 Q9Y468 1/20 0.31
▸ KDM4E B2RXH2 2/20 0.30
▸ MAPK1 P28482 1/20 0.30
▸ AKR1B1 P15121 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13027199 0.87 MAPT (0.32) PDCD1CD274MAPT
SCHEMBL13027098 0.78 KDM4E (0.33) ALDH1A1SMN1; SMN2KDM4EMAPK1
SCHEMBL13027268 0.75 PDCD1 (0.34) PDCD1CD274MAPTPDE4APDE4B
SCHEMBL17655651 0.74 MAPT (0.37) PDCD1CD274MAPTPDE4APDE4B
SCHEMBL15672365 0.73 PDCD1 (0.33) PDCD1CD274MAPTAKR1B1
SCHEMBL17616016 0.72 CA2 (0.39) PDCD1CD274MAPTPDE4APDE4B
SCHEMBL11129066 0.72 MAPT (0.38) PDCD1CD274MAPTPDE4APDE4B
SCHEMBL4897798 0.69 PDCD1 (0.41) PDCD1CD274MAPTPDE4APDE4B
SCHEMBL31285652 0.69 MAPT (0.41) PDCD1CD274MAPTPDE4APDE4B
SCHEMBL13027339 0.68 MAPT (0.30) MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8697330-B2 Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-04-15 — — US disclosed
US-20100285407-A1 Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-11-11 — — US disclosed
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