SCHEMBL1304653

SCHEMBL1304653

CC(C)(C)c1cc(C(C)(C)C)c(OC([AlH2])Oc2c(C(C)(C)C)cc(C(C)(C)C)cc2C(C)(C)C)c(C(C)(C)C)c1

nearest known ligand 0.33

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
GABRA1 P14867 1/20 0.33
GABRB2 P47870 1/20 0.33
CYP1A2 P05177 2/20 0.33
CYP3A4 P08684 1/20 0.33
CYP2C9 P11712 1/20 0.33
TSHR P16473 1/20 0.33
CYP2C19 P33261 1/20 0.33
RXRA P19793 3/20 0.31
PPARG P37231 3/20 0.31
RARG P13631 1/20 0.31
POLB P06746 1/20 0.31
HSP90AA1 P07900 1/20 0.31
KDM4E B2RXH2 1/20 0.30
ALDH1A1 P00352 1/20 0.30
MAPT P10636 1/20 0.30
ALOX15 P16050 1/20 0.30
ATP2A2 P16615 1/20 0.30
SMN1; SMN2 Q16637 1/20 0.30
ATP2A3 Q93084 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1033902 0.83 SMN1; SMN2 (0.45) CYP3A4CYP2C9CYP2C19POLBALDH1A1
SCHEMBL3678167 0.79 CYP1A2 (0.33) GABRA1GABRB2CYP1A2CYP3A4CYP2C9
SCHEMBL26876686 0.78 RARG (0.33) GABRA1GABRB2CYP1A2CYP3A4CYP2C9
SCHEMBL3682919 0.78 GABRA1 (0.32) GABRA1GABRB2CYP1A2CYP3A4CYP2C9
SCHEMBL1304345 0.77 CA2 (0.43) GABRA1GABRB2TSHRKDM4EALDH1A1
SCHEMBL4246692 0.76 RXRA (0.32) CYP1A2CYP3A4CYP2C9TSHRCYP2C19
SCHEMBL4247017 0.76 GABRA1 (0.37) GABRA1GABRB2CYP1A2CYP3A4CYP2C9
SCHEMBL3678171 0.75 CYP1A2 (0.33) GABRA1GABRB2CYP1A2CYP3A4CYP2C9
SCHEMBL4246696 0.73 RXRA (0.30) RXRAPPARG
SCHEMBL26875010 0.73 CYP1A2 (0.36) CYP1A2CYP3A4CYP2C9TSHRCYP2C19

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3459980-B1 FLUORINE-CONTAINING COPOLYMER DAIKIN IND LTD (JP) 2024-06-19 EP disclosed
US-11780946-B2 Alternating copolymer, method of producing alternating copolymer, method of producing polymeric compound, and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-10 US disclosed
US-20210230332-A1 ALTERNATING COPOLYMER, METHOD OF PRODUCING ALTERNATING COPOLYMER, METHOD OF PRODUCING POLYMERIC COMPOUND, AND METHOD OF FORMING RESIST PATTERN NATIONAL INSTITUTES OF HEALTH (NIH), U.S. DEPT. OF HEALTH AND HUMAN SERVICES (DHHS), U.S. GOVERNMENT 2021-07-29 US disclosed
EP-2921510-B1 SURFACE TREATMENT COMPOSITION DAIKIN IND LTD (JP) 2019-10-02 EP disclosed
EP-3459980-A1 FLUORINE-CONTAINING COPOLYMER Daikin Industries, Ltd. (JP) 2019-03-27 EP disclosed
US-9951166-B2 Fluorine-containing, silicon-containing polymer and surface treatment agent DAIKIN INDUSTRIES, LTD. (JP) 2018-04-24 US disclosed
US-9909027-B2 Surface treatment composition DAIKIN INDUSTRIES, LTD. (JP) 2018-03-06 US disclosed
EP-2749579-B1 CONJUGATED DIENE POLYMER AND METHOD FOR PRODUCING SAME ZEON CORP (JP) 2017-11-15 EP disclosed
US-9745394-B2 Conjugated diene polymer and method for producing same ZEON CORPORATION (JP) 2017-08-29 US disclosed
US-9696625-B2 Method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-07-04 US disclosed
US-20140350201-A1 CONJUGATED DIENE POLYMER AND METHOD FOR PRODUCING SAME KYOTO UNIVERSITY (JP) 2014-11-27 US disclosed
EP-2749579-A1 CONJUGATED DIENE POLYMER AND METHOD FOR PRODUCING SAME Zeon Corporation (JP) 2014-07-02 EP disclosed
US-8053161-B2 Improved in line edge roughness not only in ordinary exposure (dry exposure) but also in immersion exposure FUJIFILM CORPORATION (JP) 2011-11-08 US disclosed
US-7947421-B2 Fluoropolymer containing unsaturated monomer with a adamantyl, decalin, norbornyl, cedrol , cyclohexyl, cycloheptyl, cyclooctyl , a cyclodecanyl, cyclododecanyl and/or tricyclodecanyl group; sulfonium type compound generates acid upon exposure to actinic radiation; semiconductor, integrated circuits FUJIFILM CORPORATION (JP) 2011-05-24 US disclosed
US-20080081290-A1 RESIST COMPOSITION, RESIN FOR USE IN THE RESIST COMPOSITION, COMPOUND FOR USE IN THE SYNTHESIS OF THE RESIN, AND PATTERN-FORMING METHOD USING THE RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed
EP-1903394-A1 Resist composition, resin for use in the resist composition, and pattern-forming method using the resist composition FUJIFILM Corporation (JP) 2008-03-26 EP disclosed
US-20060234154-A1 Mixture containing acid generator and free radical catalyst; acrylated ester monomer JSR CORPORATION (JP) 2006-10-19 US disclosed
US-20060166136-A1 Positive resist composition for immersion exposure and pattern-forming method using the same FUJI PHOTO FILM CO., LTD. 2006-07-27 US disclosed
EP-1684119-A2 Positive resist composition for immersion exposure and pattern-forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2006-07-26 EP disclosed
EP-1602975-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2005-12-07 EP disclosed