SCHEMBL133074

SCHEMBL133074

CC(C)(C)OC(=O)C12CC3CC(CC(O)(C3)C1)C2

nearest known ligand 0.49

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.49
HSD11B1 P28845 2/20 0.46
NPSR1 Q6W5P4 2/20 0.44
ABL1 P00519 1/20 0.43
TSHR P16473 1/20 0.43
RIN1 Q13671 1/20 0.43
L3MBTL1 Q9Y468 2/20 0.43
CYP17A1 P05093 2/20 0.41
CYP19A1 P11511 2/20 0.41
NPC1 O15118 2/20 0.39
RAB9A P51151 2/20 0.39
USP2 O75604 1/20 0.39
SMN1; SMN2 Q16637 1/20 0.39
POLB P06746 1/20 0.38
CNR1 P21554 2/20 0.38
CNR2 P34972 2/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL136663 0.90 NPSR1 (0.49) ALDH1A1NPSR1CYP17A1CYP19A1SMN1; SMN2
SCHEMBL1732799 0.85 CYP17A1 (0.36) ALDH1A1HSD11B1NPSR1ABL1TSHR
SCHEMBL27975317 0.84 HSD11B1 (0.44) ALDH1A1HSD11B1NPSR1ABL1TSHR
SCHEMBL5568146 0.83 ALDH1A1 (0.44) ALDH1A1NPSR1L3MBTL1CYP17A1CYP19A1
SCHEMBL2338250 0.83 POLB (0.42) NPSR1TSHRCYP17A1CYP19A1POLB
SCHEMBL131064 0.82 CYP17A1 (0.55) ALDH1A1HSD11B1NPSR1CYP17A1CYP19A1
SCHEMBL5608439 0.81 ALDH1A1 (0.56) ALDH1A1HSD11B1NPSR1ABL1TSHR
SCHEMBL15436194 0.81 CYP17A1 (0.40) ALDH1A1NPSR1CYP17A1CYP19A1SMN1; SMN2
SCHEMBL9988372 0.81 CYP17A1 (0.40) ALDH1A1HSD11B1NPSR1L3MBTL1CYP17A1
SCHEMBL18232665 0.80 ALDH1A1 (0.56) ALDH1A1HSD11B1NPSR1ABL1TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 363 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9835945-B2 Positive resist composition and method of pattern formation with the same FUJIFILM CORPORATION (JP) 2017-12-05 US disclosed
US-9835945-B2 Positive resist composition and method of pattern formation with the same FUJIFILM CORPORATION (JP) 2017-12-05 US disclosed
EP-2356516-B1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORP (JP) 2017-10-25 EP disclosed
US-9798235-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2017-10-24 US disclosed
US-9798235-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2017-10-24 US disclosed
US-9760003-B2 Pattern forming method and actinic-ray- or radiation-sensitive resin composition FUJIFILM CORPORATION (JP) 2017-09-12 US disclosed
US-9760003-B2 Pattern forming method and actinic-ray- or radiation-sensitive resin composition FUJIFILM CORPORATION (JP) 2017-09-12 US disclosed
US-20170255098-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2017-09-07 US disclosed
US-20170255098-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2017-09-07 US disclosed
US-9709892-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the same FUJIFILM CORPORATION (JP) 2017-07-18 US disclosed
US-20070054217-A1 Positive photosensitive composition and pattern-forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-08 US disclosed
US-20070042290-A1 resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits FUJI PHOTO FILM CO., LTD. 2007-02-22 US disclosed
US-7179579-B2 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed
US-20070031757-A1 Positive photosensitive composition and method of pattern formation with the same FUJI PHOTO FILM CO., LTD. 2007-02-08 US disclosed
US-20070026343-A1 Chemical amplification-type resist composition and production process thereof FUJI PHOTO FILM CO., LTD. 2007-02-01 US disclosed
US-20070003871-A1 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. 2007-01-04 US disclosed
US-20060205957-A1 Process for producing vinyl ether compounds ISHII YASUTAKA 2006-09-14 US disclosed
US-7074970-B2 Process for producing vinyl ether compounds DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2006-07-11 US disclosed
US-20030083529-A1 Process for producing vinyl ether compounds DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2003-05-01 US disclosed
EP-1288186-A2 Vinyl ether compounds and preparation process thereof Daicel Chemical Industries, Ltd. (JP) 2003-03-05 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20060205957-A1 Process for producing vinyl ether compounds ETV6, CYP3A4, SUV39H2 ALDH1A1 1064/4885HSD11B1 91/4885NPSR1 4182/4885
US-20170255098-A1 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME POLR2H, POLQ, RXRA ALDH1A1 4816/4885HSD11B1 4180/4885NPSR1 552/4885
US-20030083529-A1 Process for producing vinyl ether compounds SRD5A2, RPS4X, RUVBL2 ALDH1A1 673/4885HSD11B1 90/4885NPSR1 4677/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.