Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PTPN1 | P18031 | 3/20 | 0.51 |
| ▸ | MAPT | P10636 | 5/20 | 0.45 |
| ▸ | LMNA | P02545 | 4/20 | 0.45 |
| ▸ | POLB | P06746 | 2/20 | 0.45 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.45 |
| ▸ | HPGD | P15428 | 1/20 | 0.45 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.45 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.45 |
| ▸ | PSEN1 | P49768 | 2/20 | 0.44 |
| ▸ | PSEN2 | P49810 | 2/20 | 0.44 |
| ▸ | APH1B | Q8WW43 | 2/20 | 0.44 |
| ▸ | NCSTN | Q92542 | 2/20 | 0.44 |
| ▸ | APH1A | Q96BI3 | 2/20 | 0.44 |
| ▸ | PSENEN | Q9NZ42 | 2/20 | 0.44 |
| ▸ | NPC1 | O15118 | 2/20 | 0.43 |
| ▸ | CASP3 | P42574 | 1/20 | 0.43 |
| ▸ | SENP8 | Q96LD8 | 1/20 | 0.43 |
| ▸ | SENP7 | Q9BQF6 | 1/20 | 0.43 |
| ▸ | SENP6 | Q9GZR1 | 1/20 | 0.43 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.43 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL8323320 | 1.00 | PTPN1 (0.51) | PTPN1MAPTLMNAPOLBCYP2C9 | |
| SCHEMBL383065 | 0.94 | PSEN1 (0.47) | PTPN1MAPTLMNAPOLBCYP2C9 | |
| SCHEMBL8319088 | 0.93 | PTPN1 (0.52) | PTPN1MAPTLMNAPOLBCYP2C9 | |
| SCHEMBL3190513 | 0.90 | PTPN1 (0.49) | PTPN1MAPTLMNAPOLBCYP2C9 | |
| Trifluoromethanesulfonic Acid SCHEMBL3197613 | 0.89 | PTPN1 (0.48) | PTPN1MAPTLMNAPOLBCYP2C9 | |
| SCHEMBL12228664 | 0.89 | PTPN1 (0.43) | PTPN1MAPTLMNAPOLBCYP2C9 | |
| Trifluoromethanesulfonic Acid SCHEMBL8862138 | 0.89 | PTPN1 (0.48) | PTPN1MAPTLMNAPOLBCYP2C9 | |
| SCHEMBL3206660 | 0.89 | MAPT (0.48) | PTPN1MAPTLMNAPOLBCYP2C9 | |
| SCHEMBL8318359 | 0.87 | MAPT (0.45) | PTPN1MAPTLMNAPOLBCYP2C9 | |
| SCHEMBL8320132 | 0.87 | PSEN1 (0.48) | PTPN1CYP2C9CYP2C19NPSR1PSEN1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 818 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4607278-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | Ycchem Co., Ltd. (KR) | 2025-08-27 | — | — | EP | claimed |
| US-20250199405-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | YCCHEM CO., LTD. (KR) | 2025-06-19 | — | — | US | claimed |
| CN-119998727-A | Chemically amplified positive resist composition for improving pattern profile and enhancing etch resistance | YC化学制品株式会社 | 2025-05-13 | — | — | CN | claimed |
| WO-2024085293-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | 영창케미칼 주식회사 | 2024-04-25 | — | — | WO | claimed |
| US-9221928-B2 | Fluorine-containing sulfonate resin, fluorine-containing N-sulfonyloxyimide resin, resist composition and pattern formation method | CENTRAL GLASS COMPANY, LIMITED (JP) | 2015-12-29 | — | — | US | claimed |
| US-9075306-B2 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-07-07 | — | — | US | claimed |
| EP-1710230-B1 | Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHINETSU CHEMICAL CO (JP) | 2013-08-14 | — | — | EP | claimed |
| EP-1780199-B1 | Novel fluorohydroxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHINETSU CHEMICAL CO (JP) | 2012-02-01 | — | — | EP | claimed |
| EP-1780198-B1 | Novel fluorosulfonyloxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHINETSU CHEMICAL CO (JP) | 2011-10-05 | — | — | EP | claimed |
| JP-8157451-A | — | — | None | — | — | JP | disclosed |
| US-20260093177-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-04-02 | — | — | US | disclosed |
| US-12535737-B2 | Material for forming adhesive film, patterning process, and method for forming adhesive film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-27 | — | — | US | disclosed |
| US-12493244-B2 | Photosensitive resin composition, photosensitive dry film, and pattern formation method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-12-09 | — | — | US | disclosed |
| EP-4202548-B1 | MATERIAL FOR FORMING ADHESIVE FILM, PATTERNING PROCESS, AND METHOD FOR FORMING ADHESIVE FILM | SHINETSU CHEMICAL CO (JP) | 2025-11-19 | — | — | EP | disclosed |
| US-20010033994-A1 | Chemical amplification, positive resist compositions | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-10-25 | — | — | US | disclosed |
| US-20010031421-A1 | Chemical amplification resist compositions | SHIN-ETSU CHEMICAL CO., LTD. OF (JP) | 2001-10-18 | — | — | US | disclosed |
| EP-1136885-A1 | Chemically amplified positive resist composition and patterning method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-09-26 | — | — | EP | disclosed |
| EP-1117003-A1 | Chemical amplification type resist composition | Shin-Etsu Chemical Co., Ltd. (JP) | 2001-07-18 | — | — | EP | disclosed |
| EP-1077391-A1 | Onium salts, photoacid generators for resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-02-21 | — | — | EP | disclosed |
| JP-H08157451-A | NEW SULFONIUM SALT AND ITS PRODUCTION | SHIN ETSU CHEM CO LTD | 1996-06-18 | — | — | JP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260093177-A1 | PATTERNING PROCESS | ARFGAP1, ARF1, ARF4 | PTPN1 3819/4885MAPT 1850/4885LMNA 454/4885 |
| US-12535737-B2 | Material for forming adhesive film, patterning process, and method for forming adhesive film | RAD51, CDH1, SMC2 | PTPN1 3523/4885MAPT 1741/4885LMNA 2049/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.