SCHEMBL8323320

SCHEMBL8323320

CC(C)(C)OC(=O)COc1ccc([S+](c2ccccc2)c2ccc(OCC(=O)OC(C)(C)C)cc2)cc1

nearest known ligand 0.51

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PTPN1 P18031 3/20 0.51
MAPT P10636 5/20 0.45
LMNA P02545 4/20 0.45
POLB P06746 2/20 0.45
CYP2C9 P11712 1/20 0.45
HPGD P15428 1/20 0.45
CYP2C19 P33261 1/20 0.45
NPSR1 Q6W5P4 1/20 0.45
PSEN1 P49768 2/20 0.44
PSEN2 P49810 2/20 0.44
APH1B Q8WW43 2/20 0.44
NCSTN Q92542 2/20 0.44
APH1A Q96BI3 2/20 0.44
PSENEN Q9NZ42 2/20 0.44
NPC1 O15118 2/20 0.43
CASP3 P42574 1/20 0.43
SENP8 Q96LD8 1/20 0.43
SENP7 Q9BQF6 1/20 0.43
SENP6 Q9GZR1 1/20 0.43
SMN1; SMN2 Q16637 2/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL133377 1.00 PTPN1 (0.51) PTPN1MAPTLMNAPOLBCYP2C9
SCHEMBL383065 0.94 PSEN1 (0.47) PTPN1MAPTLMNAPOLBCYP2C9
SCHEMBL8319088 0.93 PTPN1 (0.52) PTPN1MAPTLMNAPOLBCYP2C9
SCHEMBL3190513 0.90 PTPN1 (0.49) PTPN1MAPTLMNAPOLBCYP2C9
Trifluoromethanesulfonic Acid SCHEMBL3197613 0.89 PTPN1 (0.48) PTPN1MAPTLMNAPOLBCYP2C9
SCHEMBL12228664 0.89 PTPN1 (0.43) PTPN1MAPTLMNAPOLBCYP2C9
Trifluoromethanesulfonic Acid SCHEMBL8862138 0.89 PTPN1 (0.48) PTPN1MAPTLMNAPOLBCYP2C9
SCHEMBL3206660 0.89 MAPT (0.48) PTPN1MAPTLMNAPOLBCYP2C9
SCHEMBL8318359 0.87 MAPT (0.45) PTPN1MAPTLMNAPOLBCYP2C9
SCHEMBL8320132 0.87 PSEN1 (0.48) PTPN1CYP2C9CYP2C19NPSR1PSEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 36 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20170038679-A1 RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, ACID GENERATOR AND COMPOUND JSR CORPORATION (JP) 2017-02-09 US disclosed
US-20170038679-A1 RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, ACID GENERATOR AND COMPOUND JSR CORPORATION (JP) 2017-02-09 US disclosed
US-9523911-B2 Radiation-sensitive resin composition, resist pattern-forming method, acid generator and compound JSR CORPORATION (JP) 2016-12-20 US disclosed
US-9188858-B2 Radiation-sensitive resin composition, method for forming resist pattern, acid generating agent and compound JSR CORPORATION (JP) 2015-11-17 US disclosed
US-9152044-B2 2015-10-06 US disclosed
US-9122154-B2 Radiation-sensitive resin composition, and radiation-sensitive acid generating agent JSR CORPORATION (JP) 2015-09-01 US disclosed
US-9104102-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2015-08-11 US disclosed
US-8980529-B2 Radiation-sensitive resin composition, polymer, and resist pattern-forming method JSR CORPORATION (JP) 2015-03-17 US disclosed
US-8916333-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2014-12-23 US disclosed
US-8895222-B2 Actinic ray-sensitive or radiation-sensitive resin composition and resist film and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2014-11-25 US disclosed
US-20120295198-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2012-11-22 US disclosed
US-8026039-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2011-09-27 US disclosed
US-20110143279-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2011-06-16 US disclosed
US-7956142-B2 Polymerizable sulfonic acid onium salt and resin JSR CORPORATION (JP) 2011-06-07 US disclosed
US-20110112306-A1 Novel Sulfonic Acid Salt and Derivative thereof, Photo-Acid Generator, and Process for Production of Sulfonic Acid Salt CENTRAL GLASS COMPANY, LIMITED (JP) 2011-05-12 US disclosed
US-20100248149-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2010-09-30 US disclosed
US-20100221659-A1 COMPOUND, SALT, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-09-02 US disclosed
US-20100063232-A1 POLYMERIZABLE SULFONIC ACID ONIUM SALT AND RESIN JSR CORPORATION (JP) 2010-03-11 US disclosed
US-20100040977-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-02-18 US disclosed
US-5880169-A HAVING HIGH RESOLUTION FOR FINE PATTERNING SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-03-09 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100063232-A1 POLYMERIZABLE SULFONIC ACID ONIUM SALT AND RESIN ASIC1, RER1, RPS10 PTPN1 2089/4885MAPT 3461/4885LMNA 2641/4885
US-20100221659-A1 COMPOUND, SALT, AND RADIATION-SENSITIVE RESIN COMPOSITION AFF1, RER1, AFF4 PTPN1 1648/4885MAPT 2651/4885LMNA 1992/4885
US-20110112306-A1 Novel Sulfonic Acid Salt and Derivative thereof, Photo-Acid Generator, and Process for Production of Sulfonic Acid Salt ASIC1, FGFR1, PFAS PTPN1 162/4885MAPT 1898/4885LMNA 4546/4885
US-20170038679-A1 RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, ACID GENERATOR AND COMPOUND RER1, ASIC1, GAR1 PTPN1 3981/4885MAPT 3574/4885LMNA 3677/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.