Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.62 |
| ▸ | KDM4E | B2RXH2 | 3/20 | 0.62 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.62 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.62 |
| ▸ | POLB | P06746 | 1/20 | 0.50 |
| ▸ | CYP2A6 | P11509 | 2/20 | 0.46 |
| ▸ | CYP1A2 | P05177 | 5/20 | 0.42 |
| ▸ | HPGD | P15428 | 2/20 | 0.41 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.41 |
| ▸ | ELANE | P08246 | 1/20 | 0.38 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.37 |
| ▸ | IDO1 | P14902 | 1/20 | 0.37 |
| ▸ | TSHR | P16473 | 1/20 | 0.36 |
| ▸ | ACHE | P22303 | 1/20 | 0.36 |
| ▸ | MCL1 | Q07820 | 1/20 | 0.36 |
| ▸ | MAPT | P10636 | 2/20 | 0.36 |
| ▸ | CA1 | P00915 | 1/20 | 0.36 |
| ▸ | CA2 | P00918 | 1/20 | 0.36 |
| ▸ | CA7 | P43166 | 1/20 | 0.36 |
| ▸ | CA9 | Q16790 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4646495 | 0.87 | ALDH1A1 (0.52) | ALDH1A1KDM4EMAPK1SMN1; SMN2POLB | |
| SCHEMBL1618726 | 0.80 | ALDH1A1 (0.58) | ALDH1A1KDM4EMAPK1SMN1; SMN2POLB | |
| SCHEMBL29366129 | 0.79 | ALDH1A1 (1.00) | ALDH1A1KDM4EMAPK1SMN1; SMN2POLB | |
| SCHEMBL52405 | 0.79 | ALDH1A1 (1.00) | ALDH1A1KDM4EMAPK1SMN1; SMN2POLB | |
| Iodide SCHEMBL5967814 | 0.77 | ALDH1A1 (0.94) | ALDH1A1KDM4EMAPK1SMN1; SMN2POLB | |
| SCHEMBL4646489 | 0.76 | KDM4E (0.58) | ALDH1A1KDM4EMAPK1SMN1; SMN2POLB | |
| SCHEMBL23457946 | 0.76 | ALDH1A1 (0.64) | ALDH1A1KDM4EMAPK1SMN1; SMN2POLB | |
| SCHEMBL757891 | 0.76 | KDM4E (0.71) | ALDH1A1KDM4EMAPK1SMN1; SMN2POLB | |
| SCHEMBL29366257 | 0.76 | KDM4E (0.71) | ALDH1A1KDM4EMAPK1SMN1; SMN2POLB | |
| SCHEMBL10022717 | 0.76 | ALDH1A1 (0.71) | ALDH1A1KDM4EMAPK1SMN1; SMN2POLB |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 41 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4091578-B1 | METHOD FOR PRODUCING PLATE DENTURE | TOKUYAMA DENTAL CORP (JP) | 2024-10-09 | — | — | EP | disclosed |
| US-11857385-B2 | Method of producing plate denture, curable composition for stereolithography, and plate denture production kit | TOKUYAMA DENTAL CORPORATION (JP) | 2024-01-02 | — | — | US | disclosed |
| CN-114929158-B | Method for producing denture, curable composition for photoforming, and kit for producing denture | 株式会社德山齿科 | 2023-10-20 | — | — | CN | disclosed |
| US-20230137898-A1 | METHOD OF PRODUCING PLATE DENTURE, CURABLE COMPOSITION FOR STEREOLITHOGRAPHY, AND PLATE DENTURE PRODUCTION KIT | TOKUYAMA DENTAL CORPORATION (JP) | 2023-05-04 | — | — | US | disclosed |
| EP-4091578-A1 | METHOD FOR PRODUCING PLATE DENTURE, CURABLE STEREOLITHOGRAPHIC COMPOSITION, AND PLATE DENTURE PRODUCTION KIT | Tokuyama Dental Corporation (JP) | 2022-11-23 | — | — | EP | disclosed |
| CN-114929158-A | Method for producing a denture, curable composition for photo-molding, and kit for producing a denture | 株式会社德山齿科 | 2022-08-19 | — | — | CN | disclosed |
| CN-110862497-B | Naphthalene side group-containing polymer, preparation method thereof, hard mask composition and pattern forming method | 厦门恒坤新材料科技股份有限公司 | 2022-07-29 | — | — | CN | disclosed |
| CN-110862497-A | Naphthalene side group-containing polymer, preparation method thereof, hard mask composition and pattern forming method | 厦门恒坤新材料科技股份有限公司 | 2020-03-06 | — | — | CN | disclosed |
| CN-104122754-B | Resist lower layer combination, pattern formation method and the conductor integrated circuit device including the pattern | 第毛织株式会社 | 2018-01-05 | — | — | CN | disclosed |
| US-9195136-B2 | Resist underlayer composition, method of forming patterns and semiconductor integrated circuit device including the patterns | CHEIL INDUSTRIES, INC. (KR) | 2015-11-24 | — | — | US | disclosed |
| EP-1431315-A2 | Photopolymerization initiator and photopolymerizable composition | Tokuyama Corporation (JP) | 2004-06-23 | — | — | EP | disclosed |
| US-5122442-A | Water soluble binder; photosensitive compound | HOECHST CELANESE CORPORATION (US) | 1992-06-16 | — | — | US | disclosed |
| EP-0212482-B1 | PROCESS FOR OBTAINING NEGATIVE IMAGES FROM POSITIVE PHOTORESISTS | HOECHST CELANESE CORPORATION (US) | 1989-04-19 | — | — | EP | disclosed |
| EP-0106156-B1 | LIGHT-SENSITIVE COMPOSITION | HOECHST CELANESE CORPORATION (US) | 1988-12-21 | — | — | EP | disclosed |
| EP-0212482-A2 | Process for obtaining negative images from positive photoresists | HOECHST CELANESE CORPORATION (US) | 1987-03-04 | — | — | EP | disclosed |
| EP-0061150-B1 | LIGHT-SENSITIVE POLYCONDENSATION PRODUCT, PROCESS FOR ITS PREPARATION AND LIGHT-SENSITIVE RECORDING MATERIAL CONTAINING THE SAME | AMERICAN HOECHST CORPORATION (US) | 1986-10-15 | — | — | EP | disclosed |
| EP-0106156-A2 | Light-sensitive composition | HOECHST CELANESE CORPORATION (US) | 1984-04-25 | — | — | EP | disclosed |
| US-4436804-A | Light-sensitive polymeric diazonium condensates and reproduction compositions and materials therewith | AMERICAN HOECHST CORPORATION (US) | 1984-03-13 | — | — | US | disclosed |
| US-4435496-A | WITH FREE RADICAL PHOTOSENSITIZER | AMERICAN HOECHST CORPORATION (US) | 1984-03-06 | — | — | US | disclosed |
| EP-0061150-A1 | Light-sensitive polycondensation product, process for its preparation and light-sensitive recording material containing the same | AMERICAN HOECHST CORPORATION (US) | 1982-09-29 | — | — | EP | disclosed |