SCHEMBL136456

SCHEMBL136456

CC(C)CS(CC(C)C)(CC(C)C)c1ccccc1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ PSIP1 O75475 1/20 0.41
▸ ALDH1A1 P00352 2/20 0.38
▸ GAA P10253 1/20 0.38
▸ KMT2A Q03164 1/20 0.38
▸ TSHR P16473 1/20 0.37
▸ SMN1; SMN2 Q16637 1/20 0.37
▸ CYP2D6 P10635 2/20 0.37
▸ HTR6 P50406 1/20 0.36
▸ LARS1 Q9P2J5 1/20 0.36
▸ CYP1A2 P05177 1/20 0.35
▸ CYP2C9 P11712 1/20 0.35
▸ CYP2C19 P33261 1/20 0.35
▸ RAB9A P51151 1/20 0.35
▸ TAAR1 Q96RJ0 4/20 0.34
▸ SLC6A2 P23975 2/20 0.34
▸ MAOA P21397 1/20 0.34
▸ SLC6A4 P31645 1/20 0.34
▸ SLC6A3 Q01959 1/20 0.34
▸ SIGMAR1 Q99720 1/20 0.34
▸ CYP2A6 P11509 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25083084 0.80 PSIP1 (0.41) PSIP1ALDH1A1GAAKMT2ATSHR
SCHEMBL372611 0.80 PSIP1 (0.41) PSIP1ALDH1A1GAAKMT2ATSHR
SCHEMBL21186463 0.78 PSIP1 (0.39) PSIP1ALDH1A1GAAKMT2ASMN1; SMN2
SCHEMBL778303 0.76 PSIP1 (0.60) PSIP1ALDH1A1GAAKMT2ASMN1; SMN2
SCHEMBL24390115 0.70 HTR6 (0.41) PSIP1ALDH1A1TSHRSMN1; SMN2HTR6
SCHEMBL2703745 0.66 MMP2 (0.55) PSIP1
SCHEMBL25128848 0.65 SMN1; SMN2 (0.38) PSIP1ALDH1A1KMT2ASMN1; SMN2LARS1
SCHEMBL21186470 0.65 LARS1 (0.44) PSIP1ALDH1A1TSHRSMN1; SMN2CYP2D6
SCHEMBL18711546 0.65 HTR6 (0.41) PSIP1ALDH1A1TSHRSMN1; SMN2HTR6
SCHEMBL2437202 0.65 HTR6 (0.41) PSIP1ALDH1A1TSHRSMN1; SMN2HTR6

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 123 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3896522-B1 PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO LTD (JP) 2023-05-03 — — EP disclosed
EP-3896522-A1 PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO., LTD. (JP) 2021-10-20 — — EP disclosed
EP-2060600-B1 Resist composition, method of forming resist pattern, novel compound, and acid generator TOKYO OHKA KOGYO CO LTD (JP) 2017-12-27 — — EP disclosed
US-9618843-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-04-11 — — US disclosed
US-9494860-B2 Resist composition, method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-11-15 — — US disclosed
EP-2073060-B1 Novel compound and method of producing the same, acid generator, resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO LTD (JP) 2016-08-24 — — EP disclosed
EP-2299325-B1 Resist composition, resist pattern forming method and compound TOKYO OHKA KOGYO CO LTD (JP) 2016-02-17 — — EP disclosed
US-9250531-B2 Method of forming resist pattern and negative tone-development resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2016-02-02 — — US disclosed
US-9133102-B2 Resist composition, method of forming resist pattern and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2015-09-15 — — US disclosed
US-20150248054-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD OF MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-09-03 — — US disclosed
EP-2045661-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-04-08 — — EP disclosed
US-20090081590-A1 NEGATIVE RESIST COMPOSITION AND PROCESS FOR FORMING RESIST PATTERNS TOKYO OHKA KOGYO CO., LTD. (JP) 2009-03-26 — — US disclosed
US-20090075177-A1 POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2009-03-19 — — US disclosed
US-20090068591-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2009-03-12 — — US disclosed
US-20090047600-A1 high resolution pattern with reduced line edge roughness; increased alkali solubility under action of acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2009-02-19 — — US disclosed
EP-1947510-A1 POSITIVE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2008-07-23 — — EP disclosed
US-20080124648-A1 Resist Pattern Forming Method, Supercritical Processing Solution For Lithography Process, And Antireflection Film Forming Method NIPPON TELEGRAPH AND TELEPHONE CORPORATION (JP) 2008-05-29 — — US disclosed
US-20080118871-A1 Resist Pattern Forming Method NIPPON TELEGRAPH AND TELEPHONE CORPORATION (JP) 2008-05-22 — — US disclosed
US-20080096126-A1 Polymer Compound, Positive Resist Composition and Process for Forming Resist Pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2008-04-24 — — US disclosed
EP-1806619-A1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2007-07-11 — — EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20090068591-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, AND ACID GENERATOR RER1, C1R, ABCC1 PSIP1 3910/4885ALDH1A1 516/4885GAA 4435/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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