Predicted protein targets (top 4)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA2 | P00918 | 1/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.31 |
| ▸ | TSHR | P16473 | 1/20 | 0.31 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7136409 | 0.84 | CA2 (0.41) | CA2ALDH1A1TSHRTDP1 | |
| Trifluoromethanesulfonic Acid SCHEMBL668185 | 0.82 | HSD11B1 (0.31) | — | |
| SCHEMBL10538275 | 0.79 | CA2 (0.48) | CA2ALDH1A1TSHRTDP1 | |
| SCHEMBL4988860 | 0.78 | CA2 (0.46) | CA2ALDH1A1TSHRTDP1 | |
| SCHEMBL3742914 | 0.76 | HSD11B1 (0.30) | — | |
| SCHEMBL31337417 | 0.75 | ALDH1A1 (0.35) | CA2ALDH1A1 | |
| SCHEMBL270850 | 0.74 | CA1 (0.33) | CA2 | |
| SCHEMBL6362300 | 0.73 | ALDH1A1 (0.38) | CA2ALDH1A1TSHRTDP1 | |
| SCHEMBL11357992 | 0.72 | GABRA1 (0.38) | CA2ALDH1A1TSHRTDP1 | |
| SCHEMBL6061735 | 0.70 | CA2 (0.32) | CA2ALDH1A1TSHRTDP1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 165 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250147418-A1 | PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED SHAPED ARTICLE | JSR CORPORATION (JP) | 2025-05-08 | — | — | US | disclosed |
| CN-119330866-A | A photoacid generator Photoresist composition comprising the same | 湖北鼎龙控股股份有限公司 | 2025-01-21 | — | — | CN | disclosed |
| CN-111045296-B | UV patternable polymer blend for organic thin film transistor | 康宁股份有限公司 | 2024-12-27 | — | — | CN | disclosed |
| CN-118511127-A | Photosensitive resin composition, method for producing resist pattern film, and method for producing plating molded article | JSR株式会社 | 2024-08-16 | — | — | CN | disclosed |
| WO-2023157801-A1 | PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED SHAPED ARTICLE | JSR株式会社 | 2023-08-24 | — | — | WO | disclosed |
| EP-3896522-B1 | PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE | TOKYO OHKA KOGYO CO LTD (JP) | 2023-05-03 | — | — | EP | disclosed |
| EP-3896522-A1 | PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE | TOKYO OHKA KOGYO CO., LTD. (JP) | 2021-10-20 | — | — | EP | disclosed |
| US-10423083-B2 | Cleaning method of immersion liquid, immersion liquid cleaning composition, and substrate | JSR CORPORATION (JP) | 2019-09-24 | — | — | US | disclosed |
| EP-2060600-B1 | Resist composition, method of forming resist pattern, novel compound, and acid generator | TOKYO OHKA KOGYO CO LTD (JP) | 2017-12-27 | — | — | EP | disclosed |
| EP-2325695-B1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORP (JP) | 2017-12-20 | — | — | EP | disclosed |
| US-20090047600-A1 | high resolution pattern with reduced line edge roughness; increased alkali solubility under action of acid generator | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-02-19 | — | — | US | disclosed |
| EP-1953595-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2008-08-06 | — | — | EP | disclosed |
| EP-1947510-A1 | POSITIVE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-07-23 | — | — | EP | disclosed |
| US-20080124648-A1 | Resist Pattern Forming Method, Supercritical Processing Solution For Lithography Process, And Antireflection Film Forming Method | NIPPON TELEGRAPH AND TELEPHONE CORPORATION (JP) | 2008-05-29 | — | — | US | disclosed |
| US-20080118871-A1 | Resist Pattern Forming Method | NIPPON TELEGRAPH AND TELEPHONE CORPORATION (JP) | 2008-05-22 | — | — | US | disclosed |
| US-20080096126-A1 | Polymer Compound, Positive Resist Composition and Process for Forming Resist Pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-04-24 | — | — | US | disclosed |
| EP-1806619-A1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2007-07-11 | — | — | EP | disclosed |
| EP-1757980-A1 | Radiation sensitive resin composition | JSR Corporation (JP) | 2007-02-28 | — | — | EP | disclosed |
| US-20070042292-A1 | Radiation sensitive resin composition | JSR CORPORATION (JP) | 2007-02-22 | — | — | US | disclosed |
| US-20040048192-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2004-03-11 | — | — | US | disclosed |