SCHEMBL13683055

SCHEMBL13683055

CC(C)(C)C(=O)OCCOCOc1ccccc1-c1ccccc1

nearest known ligand 0.53

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 7/20 0.53
KDM4E B2RXH2 11/20 0.48
SMN1; SMN2 Q16637 4/20 0.48
ADRB2 P07550 1/20 0.46
ADRB1 P08588 1/20 0.46
TDP1 Q9NUW8 3/20 0.46
L3MBTL1 Q9Y468 2/20 0.46
MEN1 O00255 3/20 0.45
KMT2A Q03164 3/20 0.45
LMNA P02545 1/20 0.44
MAPK1 P28482 1/20 0.44
HTT P42858 1/20 0.44
HTR7 P34969 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13683065 0.80 KDM4E (0.54) ALDH1A1KDM4ESMN1; SMN2ADRB2ADRB1
SCHEMBL26164120 0.78 ALDH1A1 (0.55) ALDH1A1KDM4ESMN1; SMN2ADRB2ADRB1
SCHEMBL20959802 0.78 KMT2A (0.43) ALDH1A1KDM4ESMN1; SMN2TDP1L3MBTL1
SCHEMBL14827295 0.77 ALDH1A1 (0.57) ALDH1A1KDM4ESMN1; SMN2TDP1L3MBTL1
SCHEMBL11326901 0.77 ADRB2 (0.60) ALDH1A1KDM4ESMN1; SMN2ADRB2ADRB1
SCHEMBL11612037 0.76 THRB (0.51) ALDH1A1KDM4ESMN1; SMN2TDP1MEN1
SCHEMBL19901959 0.74 ALDH1A1 (0.51) ALDH1A1KDM4ESMN1; SMN2ADRB2ADRB1
SCHEMBL16236883 0.74 ELANE (0.59) ALDH1A1KDM4ESMN1; SMN2TDP1L3MBTL1
SCHEMBL12389249 0.74 THRB (0.56) ALDH1A1KDM4ESMN1; SMN2TDP1L3MBTL1
SCHEMBL8670084 0.73 ADRB2 (0.66) ALDH1A1KDM4ESMN1; SMN2ADRB2ADRB1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7592118-B2 Addition polymer ; insoluble in alkali developer ; acid generator; microlithography, resolution sensitivity, accuracy pattern profile FUJIFILM CORPORATION (JP) 2009-09-22 US disclosed
US-20080241743-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed