Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HTR6 | P50406 | 1/20 | 0.46 |
| ▸ | CA1 | P00915 | 3/20 | 0.42 |
| ▸ | CA2 | P00918 | 3/20 | 0.42 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.42 |
| ▸ | CA12 | O43570 | 2/20 | 0.42 |
| ▸ | CA9 | Q16790 | 2/20 | 0.42 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.42 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.42 |
| ▸ | CA3 | P07451 | 1/20 | 0.42 |
| ▸ | CA4 | P22748 | 1/20 | 0.42 |
| ▸ | CA6 | P23280 | 1/20 | 0.42 |
| ▸ | CA5A | P35218 | 1/20 | 0.42 |
| ▸ | CA7 | P43166 | 1/20 | 0.42 |
| ▸ | PLA2G7 | Q13093 | 1/20 | 0.42 |
| ▸ | CA13 | Q8N1Q1 | 1/20 | 0.42 |
| ▸ | CA14 | Q9ULX7 | 1/20 | 0.42 |
| ▸ | CA5B | Q9Y2D0 | 1/20 | 0.42 |
| ▸ | TSHR | P16473 | 1/20 | 0.42 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.42 |
| ▸ | DUSP3 | P51452 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| P-Xylene SCHEMBL3404430 | 0.90 | GAA (0.46) | CA1CA2ALDH1A1CA12CA9 | |
| SCHEMBL7198159 | 0.90 | TSHR (0.61) | HTR6CA1CA2ALDH1A1CA12 | |
| SCHEMBL2895606 | 0.88 | ESR1 (0.44) | HTR6CA1CA2CA12CA9 | |
| SCHEMBL2962482 | 0.88 | GAA (0.45) | CA1CA2ALDH1A1CA12CA9 | |
| Sulfuric Acid SCHEMBL5798230 | 0.87 | HTR6 (0.39) | HTR6CA1CA2ALDH1A1CA12 | |
| SCHEMBL64189 | 0.87 | CA12 (0.47) | CA1CA2ALDH1A1CA12CA9 | |
| SCHEMBL1088684 | 0.87 | ALDH1A1 (0.46) | CA1CA2ALDH1A1CA12CA9 | |
| SCHEMBL2955279 | 0.87 | PKM (0.46) | CA1CA2ALDH1A1HSD17B10TSHR | |
| SCHEMBL7133269 | 0.87 | CA12 (0.47) | CA1CA2ALDH1A1CA12CA9 | |
| SCHEMBL38662116 | 0.86 | ESR1 (0.46) | HTR6CA1CA2CA12CA9 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 520 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2326744-B1 | METAL COMPOSITIONS AND METHODS OF MAKING SAME | PRYOG LLC (US) | 2022-06-01 | — | — | EP | claimed |
| EP-0745633-B1 | Si containing high molecular compound and photosensitive resin composition | NEC CORP (JP) | 2000-08-02 | — | — | EP | claimed |
| US-5723257-A | POLYVINYLSILSESQUIOXANES OR OTHER POLYSILOXANES | NEC CORPORATION (JP) | 1998-03-03 | — | — | US | claimed |
| EP-0745633-A2 | Si containing high molecular compound and photosensitive resin composition | NEC CORPORATION (JP) | 1996-12-04 | — | — | EP | claimed |
| WO-2026100410-A1 | IODINE-CONTAINING POLYMERIZABLE COMPOUND AND IODINE-CONTAINING POLYMER | 三菱瓦斯化学株式会社 | 2026-05-15 | — | — | WO | disclosed |
| CN-122043858-A | EUV patterned resist formation method | 亚历克斯·P·G·罗宾逊 | 2026-05-15 | — | — | CN | disclosed |
| US-20250362597-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-11-27 | — | — | US | disclosed |
| US-20250321485-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-10-16 | — | — | US | disclosed |
| CN-120005123-A | Acrylic ester block copolymer resin, photoresist, and preparation method and application thereof | 中国石油化工股份有限公司 | 2025-05-16 | — | — | CN | disclosed |
| WO-2025041685-A1 | PHOTOSENSITIVE RESIN COMPOSITION FOR PRODUCING PLATED MOLDED ARTICLE, METHOD FOR PRODUCING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED MOLDED ARTICLE | JSR株式会社 | 2025-02-27 | — | — | WO | disclosed |
| WO-2025041686-A1 | PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING RESIST PATTERN FILM, AND METHOD FOR PRODUCING PLATED SHAPED ARTICLE | JSR株式会社 | 2025-02-27 | — | — | WO | disclosed |
| US-20240369924-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2024-11-07 | — | — | US | disclosed |
| EP-1011029-A2 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2000-06-21 | — | — | EP | disclosed |
| EP-0989459-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION | Clariant Finance (BVI) Limited (VG) | 2000-03-29 | — | — | EP | disclosed |
| WO-1999042903-A1 | RADIATION SENSITIVE TERPOLYMER, PHOTORESIST COMPOSITIONS THEREOF AND 193 nm BILAYER SYSTEMS | OLIN MICROELECTRONIC CHEMICALS, INC. (US) | 1999-08-26 | — | — | WO | disclosed |
| EP-0898201-A1 | Radiation sensitive resin composition | JSR Corporation (JP) | 1999-02-24 | — | — | EP | disclosed |
| US-5852128-A | Acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials | CLARIANT AG (CH) | 1998-12-22 | — | — | US | disclosed |
| EP-0827970-A2 | New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials | Clariant AG (CH) | 1998-03-11 | — | — | EP | disclosed |
| US-5723257-A | POLYVINYLSILSESQUIOXANES OR OTHER POLYSILOXANES | NEC CORPORATION (JP) | 1998-03-03 | — | — | US | disclosed |
| EP-0745633-A2 | Si containing high molecular compound and photosensitive resin composition | NEC CORPORATION (JP) | 1996-12-04 | — | — | EP | disclosed |