Known targets — ChEMBL curated mechanism
ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 2/20 | 0.46 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL669679 | 0.97 | TSHR (0.48) | TSHR | |
| Hydrochloric Acid SCHEMBL27874469 | 0.94 | TSHR (0.46) | TSHR | |
| Iodide SCHEMBL5574532 | 0.94 | TSHR (0.46) | TSHR | |
| SCHEMBL6847292 | 0.90 | TSHR (0.42) | TSHR | |
| Acetic Acid SCHEMBL27811256 | 0.85 | TSHR (0.39) | TSHR | |
| Formic Acid SCHEMBL3678404 | 0.85 | TSHR (0.39) | TSHR | |
| Silicate SCHEMBL6847289 | 0.85 | TSHR (0.39) | TSHR | |
| SCHEMBL11880292 | 0.84 | TSHR (0.42) | TSHR | |
| SCHEMBL15204261 | 0.78 | TSHR (0.46) | TSHR | |
| SCHEMBL2337550 | 0.78 | TSHR (0.33) | TSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 91 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8859437-B2 | Solution for etching a thin film transistor and method of manufacturing the same | THE PENN STATE RESEARCH FOUNDATION (US) | 2014-10-14 | — | — | US | claimed |
| US-20140193945-A1 | SOLUTION FOR ETCHING A THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME | THE PENN STATE RESEARCH FOUNDATION | 2014-07-10 | — | — | US | claimed |
| EP-2122418-B1 | STRIPPER FOR COATING LAYER | AZ ELECTRONIC MATERIALS USA (US) | 2012-08-08 | — | — | EP | claimed |
| US-20120187336-A1 | CONDITIONING COMPOSITIONS FOR SOLAR CELLS | SURFACE CHEMISTRY DISCOVERIES, INC. (US) | 2012-07-26 | — | — | US | claimed |
| US-8026201-B2 | Comprising: a fluoride source, an organic quaternary ammonium base, and a solvent selected from an organic solvent, water, and mixtures thereof; for removing silicon-based anti-reflective coatings/hardmask layers from microelectronics; etch selectivity | AZ ELECTRONIC MATERIALS USA CORP. (US) | 2011-09-27 | — | — | US | claimed |
| EP-2122418-A2 | STRIPPER FOR COATING LAYER | AZ Electronic Materials USA Corp. (US) | 2009-11-25 | — | — | EP | claimed |
| US-20090120457-A1 | COMPOSITIONS AND METHOD FOR REMOVING COATINGS AND PREPARATION OF SURFACES FOR USE IN METAL FINISHING, AND MANUFACTURING OF ELECTRONIC AND MICROELECTRONIC DEVICES | SURFACE CHEMISTRY DISCOVERIES, INC. (US) | 2009-05-14 | — | — | US | claimed |
| WO-2008081416-A2 | STRIPPER FOR COATING LAYER | AZ ELECTRONIC MATERIALS USA CORP. (DE) | 2008-07-10 | — | — | WO | claimed |
| US-20080161217-A1 | Stripper for Coating Layer | MERCK PATENT GMBH (DE) | 2008-07-03 | — | — | US | claimed |
| EP-1027415-A1 | CLEANING COMPOSITIONS AND METHODS FOR CLEANING RESIN AND POLYMERIC MATERIALS USED IN MANUFACTURE | Kyzen Corporation (US) | 2000-08-16 | — | — | EP | claimed |
| WO-1999016855-A1 | CLEANING COMPOSITIONS AND METHODS FOR CLEANING RESIN AND POLYMERIC MATERIALS USED IN MANUFACTURE | KYZEN CORPORATION (US) | 1999-04-08 | — | — | WO | claimed |
| CN-113430070-B | CoWP compatible semi-water-based cleaning solution, preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2024-08-23 | — | — | CN | disclosed |
| CN-113430069-B | Low-hydroxylamine water-based cleaning solution, and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2024-08-23 | — | — | CN | disclosed |
| CN-113430064-B | Hydroxylamine-free water-based cleaning solution, and preparation method and application thereof | 上海新阳半导体材料股份有限公司 | 2024-04-26 | — | — | CN | disclosed |
| CN-111562720-B | Photo-sensitized chemically amplified resist material, pattern forming method, semiconductor device, mask for lithography, and template for nanoimprint | 东京毅力科创株式会社 | 2023-09-29 | — | — | CN | disclosed |
| EP-0690483-A2 | Cleaning wafer substrates of metal contamination while maintaining wafer smoothness | MALLINCKRODT BAKER, Inc. (US) | 1996-01-03 | — | — | EP | disclosed |
| US-5466389-A | Cleaning compounds with metal free base and surfactant | J. T. BAKER INC. (US) | 1995-11-14 | — | — | US | disclosed |
| EP-0678571-A2 | pH Adjusted nonionic surfactant containing alkaline cleaner composition for cleaning microelectronics substrates | MALLINCKRODT BAKER, Inc. (US) | 1995-10-25 | — | — | EP | disclosed |
| US-5174816-A | SURFACE TREATING AGENT FOR ALUMINUM LINE PATTERN SUBSTRATE | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 1992-12-29 | — | — | US | disclosed |
| US-4239661-A | HYDROXYALKYL TRIALKYLAMMONIUM HYDROXIDE | TOKYO SHIBAURA ELECTRIC CO., LTD. (JP) | 1980-12-16 | — | — | US | disclosed |