SCHEMBL14461688

SCHEMBL14461688

CCC(C)(C)C(=O)OCCc1cccc2c(O)cccc12

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ TYR P14679 1/20 0.38
▸ IAPP P10997 4/20 0.38
▸ CDC25B P30305 2/20 0.37
▸ CA12 O43570 1/20 0.36
▸ CA1 P00915 1/20 0.36
▸ CA2 P00918 1/20 0.36
▸ CA7 P43166 1/20 0.36
▸ CA9 Q16790 1/20 0.36
▸ CA14 Q9ULX7 1/20 0.36
▸ KDM4E B2RXH2 1/20 0.36
▸ CDYL Q9Y232 1/20 0.36
▸ GABRA1 P14867 1/20 0.35
▸ GABRB2 P47870 1/20 0.35
▸ S1PR1 P21453 1/20 0.34
▸ S1PR3 Q99500 1/20 0.34
▸ BID P55957 3/20 0.33
▸ MCL1 Q07820 3/20 0.33
▸ BCL2L1 Q07817 2/20 0.33
▸ BAK1 Q16611 2/20 0.33
▸ KAT8 Q9H7Z6 2/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18400983 0.87 TYR (0.40) TYRIAPPCDC25BCA12CA1
SCHEMBL20215425 0.87 TYR (0.36) TYRIAPPCDC25BCA12CA1
SCHEMBL8738362 0.86 CDC25B (0.39) IAPPCDC25BCA12CA1CA2
SCHEMBL15113881 0.83 CDC25B (0.47) CDC25BCA12CA1CA2CA7
SCHEMBL15113874 0.83 IDO1 (0.42) CDC25BKDM4E
SCHEMBL15277275 0.79 IAPP (0.47) IAPPCDYLGABRA1GABRB2BID
SCHEMBL8737838 0.78 RIPK1 (0.40) CDC25BKDM4ERIPK1EP300
SCHEMBL17737119 0.77 KDM4E (0.44) CDC25BKDM4E
SCHEMBL10105529 0.76 SMN1; SMN2 (0.56) KDM4E
SCHEMBL20691726 0.76 TYR (0.41) TYRIAPPCDC25BCA12CA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 62 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9989847-B2 Onium salt compound, resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-05 — — US disclosed
US-9665002-B2 Onium salt compound, resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-30 — — US disclosed
US-9563121-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the composition FUJIFILM CORPORATION (JP) 2017-02-07 — — US disclosed
US-9563121-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the composition FUJIFILM CORPORATION (JP) 2017-02-07 — — US disclosed
US-9500951-B2 Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-11-22 — — US disclosed
US-9500951-B2 Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-11-22 — — US disclosed
US-9459531-B2 — — 2016-10-04 — — US disclosed
US-9459531-B2 — — 2016-10-04 — — US disclosed
US-20160259242-A1 NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-09-08 — — US disclosed
US-9411225-B2 Photo acid generator, chemically amplified resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-09 — — US disclosed
US-8574814-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2013-11-05 — — US disclosed
US-8574814-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2013-11-05 — — US disclosed
US-20130236832-A1 ACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-09-12 — — US disclosed
US-20130224657-A1 ACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-29 — — US disclosed
US-20130224659-A1 POLYMER, MAKING METHOD, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-29 — — US disclosed
US-20130224660-A1 PREPARATION OF POLYMER, RESULTING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-29 — — US disclosed
US-20130183621-A1 PATTERN FORMING PROCESS AND RESIST COMPOSTION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-07-18 — — US disclosed
US-20130029255-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-31 — — US disclosed
US-20130004888-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-03 — — US disclosed
US-20130004888-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-03 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20160259242-A1 NOVEL ONIUM SALT COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS LIFR, NHERF1, INSR TYR 2191/4885IAPP 4206/4885CDC25B 2401/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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