Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CDC25B | P30305 | 2/20 | 0.39 |
| ▸ | CA12 | O43570 | 1/20 | 0.38 |
| ▸ | CA1 | P00915 | 1/20 | 0.38 |
| ▸ | CA2 | P00918 | 1/20 | 0.38 |
| ▸ | CA7 | P43166 | 1/20 | 0.38 |
| ▸ | CA9 | Q16790 | 1/20 | 0.38 |
| ▸ | CA14 | Q9ULX7 | 1/20 | 0.38 |
| ▸ | RIPK1 | Q13546 | 4/20 | 0.37 |
| ▸ | GABRA1 | P14867 | 1/20 | 0.37 |
| ▸ | GABRB2 | P47870 | 1/20 | 0.37 |
| ▸ | CYBB | P04839 | 1/20 | 0.36 |
| ▸ | IAPP | P10997 | 2/20 | 0.36 |
| ▸ | CHRM2 | P08172 | 2/20 | 0.36 |
| ▸ | CHRM4 | P08173 | 2/20 | 0.36 |
| ▸ | CHRM5 | P08912 | 2/20 | 0.36 |
| ▸ | CHRM1 | P11229 | 2/20 | 0.36 |
| ▸ | CHRM3 | P20309 | 2/20 | 0.36 |
| ▸ | CDK2 | P24941 | 1/20 | 0.35 |
| ▸ | ESR1 | P03372 | 1/20 | 0.34 |
| ▸ | ESR2 | Q92731 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL8737838 | 0.91 | RIPK1 (0.40) | CDC25BRIPK1CHRM2CHRM4CHRM5 | |
| SCHEMBL15189314 | 0.89 | CDC25B (0.39) | CDC25BCA12CA1CA2CA7 | |
| SCHEMBL19558277 | 0.87 | KDM4E (0.44) | CDC25BCA12CA1CA2CA7 | |
| SCHEMBL18671832 | 0.86 | CDC25B (0.37) | CDC25BCA12CA1CA2CA7 | |
| SCHEMBL14461688 | 0.86 | TYR (0.38) | CDC25BCA12CA1CA2CA7 | |
| SCHEMBL12419176 | 0.86 | ALDH1A1 (0.41) | RIPK1GABRA1GABRB2ALDH1A1 | |
| SCHEMBL12419185 | 0.84 | RIPK1 (0.45) | RIPK1GABRA1GABRB2ALDH1A1 | |
| SCHEMBL12419175 | 0.84 | LMNA (0.41) | RIPK1ALDH1A1 | |
| SCHEMBL12419171 | 0.84 | ATM (0.49) | ALDH1A1 | |
| SCHEMBL17424794 | 0.84 | IAPP (0.36) | CDC25BCA12CA1CA2CA7 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 122 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20180180992-A1 | Chemically Amplified Positive Resist Composition and Resist Pattern Forming Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-28 | — | — | US | disclosed |
| US-20180180998-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-28 | — | — | US | disclosed |
| US-9989847-B2 | Onium salt compound, resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-05 | — | — | US | disclosed |
| US-9969829-B2 | Polymer compound, negative resist composition, laminate, patterning process, and compound | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-05-15 | — | — | US | disclosed |
| US-RE46765-E1 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-03-27 | — | — | US | disclosed |
| US-9904172-B2 | Shrink material and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-27 | — | — | US | disclosed |
| US-RE46736-E1 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-27 | — | — | US | disclosed |
| US-RE46736-E1 | Chemically amplified negative resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-27 | — | — | US | disclosed |
| US-9904169-B2 | Photomask blank, resist pattern forming process, and method for making photomask | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-27 | — | — | US | disclosed |
| US-20180039177-A1 | POSITIVE RESIST COMPOSITION, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK BLANK | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-08 | — | — | US | disclosed |
| US-20100159404-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-24 | — | — | US | disclosed |
| US-20100143830-A1 | SULFONIUM SALT, ACID GENERATOR, RESIST COMPOSITION, PHOTOMASK BLANK, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-10 | — | — | US | disclosed |
| US-20100099042-A1 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-04-22 | — | — | US | disclosed |
| US-20100055608-A1 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-04 | — | — | US | disclosed |
| US-7670751-B2 | Photoacid generator, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-02 | — | — | US | disclosed |
| US-20090269696-A1 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-10-29 | — | — | US | disclosed |
| US-20090087786-A1 | PATTERNING PROCESS AND RESIST COMPOSITION USED THEREIN | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-04-02 | — | — | US | disclosed |
| US-20090061358-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | PROXIMAL SYSTEMS CORPORATION | 2009-03-05 | — | — | US | disclosed |
| US-7449277-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL C., LTD (JP) | 2008-11-11 | — | — | US | disclosed |
| US-20070072115-A1 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-03-29 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20090061358-A1 | NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS | RER1, CRY1, CYP21A2 | CDC25B 4380/4885CA12 422/4885CA1 296/4885 |
| US-20100099042-A1 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | ARSA, ACSL3, ASH2L | CDC25B 3068/4885CA12 2589/4885CA1 2670/4885 |
| US-20100055608-A1 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | ARSA, ACSL3, RAD54L | CDC25B 3356/4885CA12 2552/4885CA1 2415/4885 |
| US-20180180998-A1 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SLC11A2, POLR2B, POLI | CDC25B 2011/4885CA12 962/4885CA1 1523/4885 |
| US-20100143830-A1 | SULFONIUM SALT, ACID GENERATOR, RESIST COMPOSITION, PHOTOMASK BLANK, AND PATTERNING PROCESS | TYK2, VRK2, ARSA | CDC25B 1087/4885CA12 3827/4885CA1 3678/4885 |
| US-20180180992-A1 | Chemically Amplified Positive Resist Composition and Resist Pattern Forming Process | POLI, POLL, SLC11A2 | CDC25B 2209/4885CA12 126/4885CA1 35/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.