Predicted protein targets (top 2)
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15964147 | 0.87 | EPHX1 (0.33) | NPSR1EPHX1 | |
| SCHEMBL14616369 | 0.82 | LMNA (0.35) | NPSR1 | |
| SCHEMBL14616313 | 0.79 | THRB (0.31) | — | |
| SCHEMBL36342 | 0.77 | ALDH1A1 (0.43) | NPSR1EPHX1 | |
| SCHEMBL14982776 | 0.77 | ALDH1A1 (0.43) | NPSR1EPHX1 | |
| SCHEMBL14770400 | 0.76 | — | — | |
| SCHEMBL14616361 | 0.75 | MAPK1 (0.30) | — | |
| SCHEMBL14616280 | 0.75 | GRM1 (0.34) | — | |
| SCHEMBL1664370 | 0.75 | ALDH1A1 (0.44) | EPHX1 | |
| SCHEMBL24518003 | 0.74 | ALDH1A1 (0.39) | NPSR1EPHX1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 61 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9910358-B2 | Patterning process and chemically amplified negative resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-03-06 | — | — | US | disclosed |
| US-9910358-B2 | Patterning process and chemically amplified negative resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-03-06 | — | — | US | disclosed |
| US-9709890-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-07-18 | — | — | US | disclosed |
| US-9709890-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-07-18 | — | — | US | disclosed |
| US-9551932-B2 | Patterning process and resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-01-24 | — | — | US | disclosed |
| US-9551932-B2 | Patterning process and resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-01-24 | — | — | US | disclosed |
| US-20160109803-A1 | PATTERNING PROCESS AND CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-04-21 | — | — | US | disclosed |
| US-20160109803-A1 | PATTERNING PROCESS AND CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-04-21 | — | — | US | disclosed |
| US-20160085149-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-03-24 | — | — | US | disclosed |
| US-20160085149-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-03-24 | — | — | US | disclosed |
| US-20140045123-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-02-13 | — | — | US | disclosed |
| US-20130209935-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-08-15 | — | — | US | disclosed |
| US-20130209935-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-08-15 | — | — | US | disclosed |
| US-20130108960-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-05-02 | — | — | US | disclosed |
| US-20130108960-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-05-02 | — | — | US | disclosed |
| US-20130071788-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-03-21 | — | — | US | disclosed |
| US-20130071788-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-03-21 | — | — | US | disclosed |
| US-20130052587-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-02-28 | — | — | US | disclosed |
| US-20130052587-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-02-28 | — | — | US | disclosed |
| US-20130017492-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-17 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20140045123-A1 | MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | MMAB, PARG, DNMT3A | NPSR1 4753/4885EPHX1 1639/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.