SCHEMBL14616369

SCHEMBL14616369

C=C(COCOC)C(=O)OCOCC1CCCCC1

nearest known ligand 0.35

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.35
NPSR1 Q6W5P4 1/20 0.33
NAAA Q02083 1/20 0.32
SLC1A3 P43003 2/20 0.30
SLC1A2 P43004 2/20 0.30
SLC1A1 P43005 2/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14616284 0.82 NPSR1 (0.33) NPSR1
SCHEMBL14665862 0.79 ALDH1A1 (0.45) LMNANAAASLC1A3SLC1A2SLC1A1
SCHEMBL14616313 0.78 THRB (0.31)
SCHEMBL14982775 0.77 ALDH1A1 (0.46) LMNANAAASLC1A3SLC1A2SLC1A1
SCHEMBL13697527 0.76 CYP1A2 (0.34) LMNANPSR1SLC1A3SLC1A2SLC1A1
SCHEMBL14616371 0.76 SIRT5 (0.32) LMNANPSR1
SCHEMBL25432952 0.75 LMNA (0.41) LMNANAAASLC1A3SLC1A2SLC1A1
SCHEMBL3492200 0.74 CTSL (0.31) LMNA
SCHEMBL2739896 0.72 LMNA (0.44) LMNANAAASLC1A3SLC1A2SLC1A1
SCHEMBL14789953 0.72

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 66 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9910358-B2 Patterning process and chemically amplified negative resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-06 US disclosed
US-9910358-B2 Patterning process and chemically amplified negative resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-06 US disclosed
US-9709890-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-07-18 US disclosed
US-9709890-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-07-18 US disclosed
US-9551932-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-01-24 US disclosed
US-9551932-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-01-24 US disclosed
US-20160109803-A1 PATTERNING PROCESS AND CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-04-21 US disclosed
US-20160109803-A1 PATTERNING PROCESS AND CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-04-21 US disclosed
US-20160085149-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-03-24 US disclosed
US-20160085149-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-03-24 US disclosed
US-20130209935-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-15 US disclosed
US-20130209935-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-15 US disclosed
US-20130108960-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-02 US disclosed
US-20130108960-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-02 US disclosed
US-20130071788-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-03-21 US disclosed
US-20130071788-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-03-21 US disclosed
US-20130052587-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-02-28 US disclosed
US-20130052587-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-02-28 US disclosed
US-20130017492-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-17 US disclosed
US-20130017492-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-17 US disclosed