SCHEMBL14617263

SCHEMBL14617263

CCC(C)C(=O)OCCOC(=O)C(O)(C(F)(F)F)C(F)(F)F

nearest known ligand 0.33

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
POLB P06746 1/20 0.31
NPSR1 Q6W5P4 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13556126 0.84 CA1 (0.31)
SCHEMBL13556122 0.84 CES2 (0.31)
SCHEMBL26163181 0.84 POLB (0.30) POLBNPSR1
SCHEMBL16543404 0.82 CA1 (0.32)
SCHEMBL15134088 0.82 HTT (0.31)
SCHEMBL15134087 0.82 LMNA (0.31)
SCHEMBL18845047 0.81 POLB (0.31) POLBNPSR1
SCHEMBL17548747 0.81 CA1 (0.38)
SCHEMBL25633247 0.81 POLB (0.31) POLBNPSR1
SCHEMBL24142373 0.81

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11783958-B2 Conductive wiring material composition, conductive wiring substrate and method for producing conductive wiring substrate SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-10 US disclosed
US-9790166-B2 Polymer, monomer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-10-17 US disclosed
US-9758609-B2 Monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-9758609-B2 Monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-9740100-B2 Hemiacetal compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-22 US disclosed
US-9740100-B2 Hemiacetal compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-22 US disclosed
US-20170131635-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-11 US disclosed
US-20170131635-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-11 US disclosed
US-20160342086-A1 POLYMER, MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-11-24 US disclosed
US-20160342086-A1 POLYMER, MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-11-24 US disclosed
US-9046772-B2 Monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-06-02 US disclosed
US-9040222-B2 Polymerizable tertiary ester compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-05-26 US disclosed
US-9040222-B2 Polymerizable tertiary ester compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-05-26 US disclosed
US-20140242519-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-08-28 US disclosed
US-20140242519-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-08-28 US disclosed
US-8795946-B2 Polymerizable ester compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-08-05 US disclosed
US-8795946-B2 Polymerizable ester compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-08-05 US disclosed
US-20130189620-A1 POLYMERIZABLE TERTIARY ESTER COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-07-25 US disclosed
US-20130189620-A1 POLYMERIZABLE TERTIARY ESTER COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-07-25 US disclosed
US-20130017484-A1 POLYMERIZABLE ESTER COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-17 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20160342086-A1 POLYMER, MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS PARG, RAD1, POLR1A POLB 17/4885NPSR1 3706/4885
US-20130017484-A1 POLYMERIZABLE ESTER COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS RER1, DOT1L, H1-0 POLB 749/4885NPSR1 3571/4885
US-20130189620-A1 POLYMERIZABLE TERTIARY ESTER COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS EEF1A1, ELL, LAS1L POLB 392/4885NPSR1 4173/4885
US-20170131635-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS H1-2, H1-0, H1-4 POLB 604/4885NPSR1 2243/4885
US-20140242519-A1 MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS H1-3, H1-0, H1-10 POLB 1730/4885NPSR1 1167/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.