SCHEMBL14647641

SCHEMBL14647641

CS(c1ccccc1)(c1ccccc1)c1ccc(O)cc1

nearest known ligand 0.52

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ENPP2 Q13822 1/20 0.52
CA12 O43570 2/20 0.48
CA1 P00915 2/20 0.48
CA2 P00918 2/20 0.48
CA9 Q16790 2/20 0.48
GLA P06280 1/20 0.48
CA3 P07451 1/20 0.48
CA4 P22748 1/20 0.48
TDP1 Q9NUW8 1/20 0.48
CA14 Q9ULX7 1/20 0.48
ESR1 P03372 11/20 0.46
ESR2 Q92731 7/20 0.46
MMP3 P08254 1/20 0.46
BCL2L1 Q07817 1/20 0.46
ALDH1A1 P00352 1/20 0.43
CYP3A4 P08684 1/20 0.43
LMNA P02545 1/20 0.42
PTGS2 P35354 1/20 0.42
LTA4H P09960 1/20 0.41
NR1H2 P55055 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL24593473 1.00 ENPP2 (0.52) ENPP2CA12CA1CA2CA9
SCHEMBL3253436 0.84 HTR6 (0.47) CA12CA1CA2CA9CA3
SCHEMBL21794256 0.79 CA12 (0.46) ENPP2CA12CA1CA2CA9
SCHEMBL18309904 0.79 CA12 (0.53) ENPP2CA12CA1CA2CA9
SCHEMBL14905860 0.77 ACHE (0.50) CA12CA1CA2CA9CA3
SCHEMBL7937451 0.75 HTR6 (0.70) ENPP2CA12CA1CA2CA9
SCHEMBL312518 0.75 HTR6 (0.70) ENPP2CA12CA1CA2CA9
SCHEMBL21581122 0.75 CA12 (0.48) ENPP2CA12CA1CA2CA9
SCHEMBL19141768 0.75 PTGS2 (0.48) CA12CA1CA2CA9CA3
SCHEMBL14325967 0.73 ALDH1A1 (0.42) MMP3ALDH1A1CYP3A4NR1H2MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024150676-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION 富士フイルム株式会社 2024-07-18 WO disclosed
WO-2023120200-A1 RADIATION-SENSITIVE COMPOSITION AND PATTERN FORMATION METHOD JSR株式会社 2023-06-29 WO disclosed
WO-2023113086-A1 SALT COMPOUND, AND QUENCHER AND PHOTORESIST COMPOSITION COMPRISING SAME 주식회사 동진쎄미켐 2023-06-22 WO disclosed
WO-2023017702-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE 富士フイルム株式会社 2023-02-16 WO disclosed
WO-2023017703-A1 ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE 富士フイルム株式会社 2023-02-16 WO disclosed
WO-2023002869-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, RESIN, AND METHOD FOR PRODUCING RESIN 富士フイルム株式会社 2023-01-26 WO disclosed
WO-2022158323-A1 PATTERN FORMATION METHOD AND METHOD FOR PRODUCING ELECTRONIC DEVICE 富士フイルム株式会社 2022-07-28 WO disclosed
EP-3848756-B1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORP (JP) 2022-07-06 EP disclosed
EP-3848756-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM Corporation (JP) 2021-07-14 EP disclosed
EP-3745207-B1 PATTERN-FORMING METHOD USING ELECTRON BEAMS FOR EUV RAYS AND USE OF THIS METHOD FOR FORMING A FINE CIRCUIT OF A SEMICONDUCTOR DEVICE FUJIFILM CORP (JP) 2021-06-16 EP disclosed
EP-3745207-A1 PATTERN-FORMING METHOD USING ELECTRON BEAMS FOR EUV RAYS AND USE OF THIS METHOD FOR FORMING A FINE CIRCUIT OF A SEMICONDUCTOR DEVICE FUJIFILM Corporation (JP) 2020-12-02 EP disclosed
EP-3731016-A1 ACTIVE LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMATION METHOD, MASK BLANK WITH RESIST FILM, METHOD FOR MANUFACTURING PHOTOMASK, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE Fujifilm Corporation (JP) 2020-10-28 EP disclosed
EP-2746853-B1 Pattern-forming method using electron beams or EUV rays and use of this method for forming a fine circuit of a semiconductor device FUJIFILM CORP (JP) 2020-07-22 EP disclosed
EP-3508917-A1 ACTIVE RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMATION METHOD, AND ELECTRONIC DEVICE PRODUCTION METHOD FUJIFILM Corporation (JP) 2019-07-10 EP disclosed
EP-3279734-B1 POSITIVE RESIST COMPOSITION, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK BLANK SHINETSU CHEMICAL CO (JP) 2018-07-25 EP disclosed
EP-3279734-A1 POSITIVE RESIST COMPOSITION, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK BLANK Shin-Etsu Chemical Co., Ltd. (JP) 2018-02-07 EP disclosed
US-9568824-B2 Actinic-ray- or radiation-sensitive resin composition, resist film therefrom and method of forming pattern therewith FUJIFILM CORPORATION (JP) 2017-02-14 US disclosed
EP-2362268-B1 Polymer, chemically amplified positive resist compositions and pattern forming process SHINETSU CHEMICAL CO (JP) 2013-01-23 EP disclosed
CN-1258573-C Solidified composition forming as protective membrane, forming method of the membrance and the membrane JSR CORP (JP) 2006-06-07 CN disclosed
CN-1414048-A Solidified composition forming as protective membrane, forming method of the membrance and the membrane JSR CORP (JP) 2003-04-30 CN disclosed